Analysis of Raman spectra of ZnWO4 single crystals (English)
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In:
Journal of Applied Physics
;
64
, 9
;
4651-4653
;
1988
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ISSN:
- Article (Journal) / Print
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Title:Analysis of Raman spectra of ZnWO4 single crystals
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Additional title:Analyse der Ramanspektren von ZnWO4-Einkristallen
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Contributors:
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Published in:Journal of Applied Physics ; 64, 9 ; 4651-4653
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Publisher:
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Publication date:1988
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Size:3 Seiten, 4 Bilder, 3 Tabellen, 5 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 64, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 4269
-
Electron-transport, ionization, attachment, and dissociation of efficients in SF6 and its mixturesPhelps, A.V. / Brunt, R.J. van et al. | 1988
- 4269
-
Electron‐transport, ionization, attachment, and dissociation coefficients in SF6 and its mixturesPhelps, A. V. / Van Brunt, R. J. et al. | 1988
- 4278
-
Field injection electrostatic spraying of liquid hydrogenWoosley, J. P. / Turnbull, R. J. / Kim, K. et al. | 1988
- 4285
-
Parametric study of a room‐temperature metal vapor laserAnders, A. K. / Tobin, R. C. et al. | 1988
- 4293
-
Theoretical investigation of superfluorescent emission from an optically pumped CF4 gas columnSinha, Sucharita et al. | 1988
- 4301
-
A power‐squared sensor for two‐photon spectroscopy and dispersion of second‐order coherenceJones, Richard D. / Callis, Patrik R. et al. | 1988
- 4306
-
Properties of liquid‐phase epitaxy grown Pb1−xSnxTe homostructure diode lasers with Ga‐doped cladding layerShahar, A. / Zussman, A. et al. | 1988
- 4318
-
Degenerate four‐wave mixing from a waveguide with guided wave pump beamsStegeman, G. I. / Wright, E. M. / Seaton, C. T. et al. | 1988
- 4323
-
Axis shielding in cylindrical nuclear‐reactor‐pumped lasersTorczynski, J. R. / Gross, R. J. et al. | 1988
- 4329
-
Optical phase conjugation reflectivity and fidelity in CS2 by picosecond pulse four wave mixingVan Wonterghem, B. / Dutton, T. E. / Saltiel, S. M. / Rentzepis, P. M. et al. | 1988
- 4334
-
On the normal acceleration sensitivity of ST‐cut quartz surface wave resonators supported along rectangular edgesTiersten, H. F. / Shick, D. V. et al. | 1988
- 4342
-
Parallel‐processing single‐beam Fourier‐imaging thermal‐wave microscopes: Line‐heating systemsLo¨rincz, A. et al. | 1988
- 4347
-
Experimental technique for the determination of surface acoustic wave grating impedance and velocity perturbationsHunt, W. D. / Hunsinger, B. J. et al. | 1988
- 4355
-
A lumped circuit model for transient arc dischargesRobiscoe, R. T. / Kadish, A. / Maier II, William B. et al. | 1988
- 4364
-
Circuit model of surface arcingRobiscoe, R. T. / Sui, Zhifeng et al. | 1988
- 4375
-
Self‐consistent stochastic electron heating in radio frequency dischargesGoedde, C. G. / Lichtenberg, A. J. / Lieberman, M. A. et al. | 1988
- 4384
-
Nonlinear excitation and dissociation kinetics in discharges through mixtures of rare and attaching gasesScheller, Geoffrey R. / Gottscho, Richard A. / Intrator, T. / Graves, D. B. et al. | 1988
- 4398
-
Behavior of downstream plasmas generated in a microwave plasma chemical‐vapor deposition reactorShufflebotham, P. K. / Thomson, D. J. / Card, H. C. et al. | 1988
- 4404
-
Townsend coefficients for electron scattering over dielectric surfacesPeck, Timothy L. / Kushner, Mark J. et al. | 1988
- 4410
-
Ultraviolet laser‐induced oxidation of silicon: The effect of oxygen photodissociation upon oxide growth kineticsOrlowski, T. E. / Mantell, D. A. et al. | 1988
- 4415
-
Cross‐sectional high‐resolution electron microscopy investigation of argon‐ion implantation‐induced amorphization of siliconClaverie, A. / Vieu, C. / Faure´, J. / Beauvillain, J. et al. | 1988
- 4424
-
Channeling and nuclear reaction analysis of shallow B‐ and BF2‐ implanted SiRidgway, M. C. / Whitton, J. L. / Scanlon, P. J. et al. | 1988
- 4430
-
Practical approach to ion track energy distributionStapor, W. J. / McDonald, P. T. et al. | 1988
- 4435
-
Pressure‐induced structural changes in boron oxide glassChason, Eric / Spaepen, Frans et al. | 1988
- 4450
-
Lead fluoroborate glassesGressler, Carole A. / Shelby, James E. et al. | 1988
- 4454
-
Effects of heavy boron doping upon oxygen precipitation in Czochralski siliconHahn, S. / Ponce, F. A. / Tiller, W. A. / Stojanoff, V. / Bulla, D. A. P. / Castro, W. E. et al. | 1988
- 4466
-
Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescenceMe´ndez, B. / Piqueras, J. / Domi´nguez‐Adame, F. / de Diego, N. et al. | 1988
- 4469
-
Effective elastic and piezoelectric constants of superlatticesAkcakaya, E. / Farnell, G. W. et al. | 1988
- 4474
-
Two‐dimensional study of shock breakout at the rear face of laser irradiated metallic targetsCottet, F. / Marty, L. / Hallouin, M. / Romain, J. P. / Virmont, J. / Fabbro, R. / Faral, B. et al. | 1988
- 4478
-
Thermal and ion‐induced, metastable‐cubic Al3M phases in Al‐Ti and Al‐Hf thin filmsHong, Q. Z. / Lilienfeld, D. A. / Mayer, J. W. et al. | 1988
- 4484
-
General model for intrinsic dopant diffusion in silicon under nonequilibrium point‐defect conditionsCowern, N. E. B. et al. | 1988
- 4491
-
Diffusion in three different dislocations in an fcc crystalStark, J. P. / Lee, D. Y. / Vaughn, Leslie et al. | 1988
- 4494
-
Dependence of silver distributions in electron‐beam‐exposed regions on dosage as well as on the thicknesses of dry‐sensitized layers and chalcogenide glass filmsLiang, Yong‐Cheng / Tada, Kunio et al. | 1988
- 4499
-
Dissolution pits and Si epitaxial regrowth in the Al/(111)Si systemFujimura, Norifumi / Kurosaki, Hideki / Ito, Taichiro / Nakayama, Yutaka et al. | 1988
- 4503
-
Interface roughness of GaAs‐AlAs quantum wells grown by molecular‐beam epitaxy: Misorientation effectsTanaka, Masaaki / Sakaki, Hiroyuki et al. | 1988
- 4509
-
Thin heteroepitaxial Si‐on‐sapphire films grown at 600 °C by reactive ion beam depositionYamada, Hiroshi / Torii, Yasuhiro et al. | 1988
- 4516
-
Electrical measurement of the dopant segregation profile at the grain boundary in silicon bicrystalsBroniatowski, A. et al. | 1988
- 4526
-
Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical‐vapor depositionErnst, F. / Pirouz, P. et al. | 1988
- 4531
-
Substrate‐polarity dependence of metal‐organic vapor‐phase epitaxy‐grown GaN on SiCSasaki, T. / Matsuoka, T. et al. | 1988
- 4536
-
Evidence for amorphous multilayered silicon obtained by deposition under modulated pressure of hydrogenVergnat, M. / George, B. / Bruson, A. / Marchal, G. / Mangin, Ph. / Demai, J. J. et al. | 1988
- 4538
-
Lattice relaxation in silicon doped with 4d and 5d transition metalsMayo, Santos / Lowney, Jeremiah R. et al. | 1988
- 4544
-
Application of multiscattering theory to impurity bands in Si:AsLowney, Jeremiah R. et al. | 1988
- 4549
-
Spin‐orbit band effects on silicon hot‐hole transportOhno, Yasuo et al. | 1988
- 4554
-
Harmonic generation in nondegenerate semiconductors at low lattice temperaturePaul, S. S. / Bhattacharya, D. P. et al. | 1988
- 4562
-
An analytic model for calculating trapped charge in amorphous siliconShaw, John G. / Hack, Michael et al. | 1988
- 4567
-
Charge trapping characteristics of multilayer dielectrics in metal‐insulator semiconductor structuresBaunach, R. / Spitzer, A. et al. | 1988
- 4574
-
Optical and electrical characterization of high‐resistivity liquid‐phase‐epitaxial In0.53Ga0.47As| 1988
- 4580
-
Experimental study of the surface photoelectric effect in cesiated thin silver filmsGoudonnet, J. P. / Chabrier, G. / Vernier, P. / Arakawa, E. T. et al. | 1988
- 4585
-
Silicon oxynitride films: Ion bombardment effects, depth profiles, and ionic polarization, studied with the aid of the Auger parameterRivie`re, J. C. / Crossley, J. A. A. / Sexton, B. A. et al. | 1988
- 4601
-
Determination of grain‐boundary parameters of polycrystalline silicon by ac electron‐beam‐induced currentRomanowski, A. / Wittry, D. B. et al. | 1988
- 4609
-
Orientation dependence of valence‐subband structures in GaAs‐Ga1−xAlxAs quantum‐well structuresHoung, Mau‐Phon / Chang, Yia‐Chung / Wang, W. I. et al. | 1988
- 4614
-
Schottky barrier height of single‐crystal nickel disilicide/silicon interfacesKikuchi, Akira / Ohshima, Takashi / Shiraki, Yasuhiro et al. | 1988
- 4618
-
The interaction of gold with gallium arsenideWeizer, Victor G. / Fatemi, Navid S. et al. | 1988
- 4624
-
Upper critical fields of YBa2Cu3O(7-delta) with 60 and 90 K superconductivity and the weak link effect in the systemShi, D. et al. | 1988
- 4624
-
Upper critical fields of YBa2Cu3O7−δ with 60 and 90 K superconductivity and the weak link effect in the systemShi, Donglu et al. | 1988
- 4627
-
Frequency dependence of coercivity and initial permeability in ferromagnetic metallic glassesJen, S. U. / Weng, C. J. et al. | 1988
- 4632
-
Deuterium implantation in magnetic garnetsWilts, C. H. / Urai, A. et al. | 1988
- 4640
-
Domain wall nucleation by impurity ions in KNbO3 single crystalsIngle, S. G. / Dutta, H. S. / David, A. P. et al. | 1988
- 4646
-
Hydrogenated amorphous carbon dielectric coatings for magneto‐optic data storage mediaRobinson, C. J. / Payne, R. N. / Bell, A. E. et al. | 1988
- 4651
-
Analysis of Raman spectra of ZnWO4 single crystalsLiu, Y. / Wang, H. / Chen, G. / Zhou, Y. D. / Gu, B. Y. / Hu, B. Q. et al. | 1988
- 4654
-
Simple holographic method for determination of Li/Nb ratio and homogeneity of LiNbO3 crystalsArizmendi, L. et al. | 1988
- 4657
-
Spectroscopic and fast photographic studies of excimer laser polymer ablationDyer, P. E. / Sidhu, J. et al. | 1988
- 4664
-
Infrared optical absorption of thin PtSi films between 1 and 6 μmMooney, Jonathan M. et al. | 1988
- 4668
-
Optimization of the photorefractive properties of KNbO3 crystalsMedrano, C. / Voit, E. / Amrhein, P. / Gu¨nter, P. et al. | 1988
- 4674
-
Dielectric measurements of selected ceramic materials at 245 GHzDutta, J. M. / Jones, C. R. et al. | 1988
- 4678
-
Piezoreflectance as a supplement to photoreflectance for nondestructive characterization of GaAs/AlxGa1−xAs multiple quantum wellsTober, R. L. / Smirl, Arthur L. / Boggess, Thomas F. / Schulman, J. N. et al. | 1988
- 4683
-
Vacuum emission of hot electrons from silicon dioxide at low temperaturesDiMaria, D. J. / Fischetti, M. V. et al. | 1988
- 4692
-
Heavily Si‐doped GaAs grown by metalorganic chemical vapor depositionFuruhata, Naoki / Kakimoto, Koichi / Yoshida, Masaji / Kamejima, Taibun et al. | 1988
- 4696
-
Plasma‐ and gas‐surface interactions during the chemical vapor deposition of tungsten from H2/WF6Green, W. M. / Hess, D. W. / Oldham, W. G. et al. | 1988
- 4704
-
In situ infrared reflection absorption spectroscopic characterization of plasma enhanced chemical vapor deposited SiO2 filmsKoller, Kent B. / Schmidt, William A. / Butler, James E. et al. | 1988
- 4711
-
Reactions of Zr thin films with SiO2 substratesWang, S. Q. / Mayer, J. W. et al. | 1988
- 4717
-
Electrostrictions in high‐power soliton generatorIkezi, H. / Lin‐Liu, Y. R. / Ohkawa, T. / deGrassie, J. S. et al. | 1988
- 4720
-
Annealing results on low‐energy proton‐irradiated GaAs solar cellsKachare, R. / Anspaugh, B. E. / O’Meara, L. et al. | 1988
- 4726
-
Magnetostatic wave propagation in lossy ferrite layers under perpendicular biasBuris, N. E. et al. | 1988
- 4733
-
Scaling, material, and design characteristics of the permeable base transistorMeyyappan, M. / Kreskovsky, J. P. / Grubin, H. L. et al. | 1988
- 4751
-
A time domain analysis of the charge pumping currentGhibaudo, Gerard / Saks, Nelson S. et al. | 1988
- 4755
-
Light‐ion‐bombarded p‐type In0.53Ga0.47AsRao, Mulpuri V. / Babu, R. Sachidananda / Dietrich, Harry B. / Thompson, Phillip E. et al. | 1988
- 4760
-
Percolating cermet thin‐film thermistors between 50 mK–300 K and 0–20 TGershenfeld, N. A. / VanCleve, J. E. / Webb, W. W. / Fischer, H. E. / Fortune, N. A. / Brooks, J. S. / Graf, M. J. et al. | 1988
- 4762
-
A simple new method to grow crystalline metallic thin films on amorphous substratesRomeo, N. et al. | 1988
- 4765
-
Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysisPaulus, M. J. / Huang, C. I. / Bozada, C. A. / Cheney, M. E. / Dudley, S. C. / Stutz, C. E. / Evans, K. R. / Jones, R. L. et al. | 1988
- 4768
-
Shallow diffusion of zinc into InAs and InAsSbKhald, H. / Mani, H. / Joullie, A. et al. | 1988
- 4770
-
Formation and thermal stability of vapor‐deposited amorphous Ni‐Zr thin filmsMinemura, T. / van den Broek, J. J. / Daams, J. L. C. et al. | 1988
- 4772
-
Structural comparison of amorphous Cu50Zr50 alloys prepared by proton irradiation, melt spinning, and mechanical alloyingLee, Dokyol / Cheng, J. / Yuan, M. / Wagner, C. N. J. / Ardell, A. J. et al. | 1988
- 4775
-
Effect of annealing on the Schottky barrier height of Al/n‐Si Schottky diodes after Ar+ ion bombardmentCarr, B. A. / Friedland, E. / Malherbe, J. B. et al. | 1988
- 4777
-
Overlayer metallicity and Fermi‐level pinning at the Ca‐GaAs(110) interfaceMao, D. / Young, K. / Stiles, K. / Kahn, A. et al. | 1988
- 4780
-
Measurements of empty cell gap for liquid‐crystal displays using interferometric methodsYang, K. H. et al. | 1988
- 4782
-
Pulsed‐laser‐induced reactive alloying of Fe‐W system under benzeneGhaisas, Smita / Chaudhari, S. M. / Kanetkar, S. M. / Ghaisas, S. V. / Kulkarni, V. N. et al. | 1988
- 4785
-
High‐power, high‐speed 1.3‐μm semi‐insulating‐blocked distributed‐feedback lasersKoren, U. / Koch, T. L. / Corvini, P. J. / Miller, B. I. / Eisenstein, G. / Tucker, R. S. / Su, Y. K. / Capik, R. J. et al. | 1988
- 4787
-
Correlation between electron capture and emission barriers of localized defects in mixed crystalsDobaczewski, L. et al. | 1988
- 4790
-
Improved measurements of the stimulated Raman scattering spectrum generated in a single mode fiber at λ=1.064 μm in continuous‐wave regimeIrrera, Fernanda / Pozza, Davide et al. | 1988
- 4792
-
Circuit simulation of resonant tunneling double‐barrier diodeLiu, H. C. et al. | 1988
- 4795
-
Erratum: ‘‘Chemical treatment and Fermi‐level pinning of CuInS2 and InP photocathodes’’ [J. Appl. Phys. 63, 2420 (1988)]Lewerenz, H. J. / Goslowsky, H. et al. | 1988
- 4795
-
Erratum: ‘‘Elastic wave propagation in noncentrosymmetric, isotropic media: Dispersion and field equations’’ [J. Appl. Phys. 63, 5246 (1988)]Lakhtakia, Akhlesh / Varadan, Vasundara V. / Varadan, Vijay K. et al. | 1988
- 4795
-
Erratum: ‘‘Tunneling process in AlAs/GaAs double quantum wells studied by photoluminescence’’ [J. Appl. Phys. 63, 5491 (1988)]Tada, Tetsuya / Yamaguchi, Atsushi / Ninomiya, Toshiyuki / Uchiki, Hisao / Kobayashi, Takayoshi / Yao, Takafumi et al. | 1988
- 4796
-
Erratum: ‘‘Multi‐ion crystal field analysis: Methodology and application to (ErxPr1−x)2Fe14B’’ [J. Appl. Phys. 63, 3124 (1988)]Boltich, E. B. et al. | 1988
- R65
-
Native defects in gallium arsenideBourgoin, J. C. / von Bardeleben, H. J. / Stie´venard, D. et al. | 1988