Influence of hydrogen dilution on the optoelectronic properties of glow discharge amorphous silicon carbon alloys (English)
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In:
Journal of Applied Physics
;
71
, 1
;
267-272
;
1992
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ISSN:
- Article (Journal) / Print
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Title:Influence of hydrogen dilution on the optoelectronic properties of glow discharge amorphous silicon carbon alloys
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Additional title:Einfluß von Wasserstoffverdünnung auf optoelektronische Eigenschaften glimmentladener amorpher Silicium-Carbon-Legierungen
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Contributors:Alvarez, F. ( author ) / Sebastiani, M. ( author ) / Pozzilli, F. ( author ) / Fiorini, P. ( author ) / Evangelisti, F. ( author )
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Published in:Journal of Applied Physics ; 71, 1 ; 267-272
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Publisher:
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Publication date:1992
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Size:6 Seiten, 10 Bilder, 18 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 71, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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An infrared dielectric function model for amorphous solidsBrendel, R. / Bormann, D. et al. | 1992
- 7
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Analysis of photon scanning tunneling microscope imagesCites, J. / Sanghadasa, M. F. M. / Sung, C. C. / Reddick, R. C. / Warmack, R. J. / Ferrell, T. L. et al. | 1992
- 11
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Elastic scattering of electrons and positrons by bound phosphorus, indium, and antimony atomsO¨ztu¨rk, N. / Williamson, W. / Antolak, A. J. et al. | 1992
- 15
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Ionization coefficients in selected gas mixtures of interest to particle detectorsDatskos, P. G. / Carter, J. G. / Christophorou, L. G. et al. | 1992
- 22
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Automatic quasiphase matching for second‐harmonic generation in a periodically poled LiNbO3 waveguideShinozaki, K. / Fukunaga, T. / Watanabe, K. / Kamijoh, T. et al. | 1992
- 28
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Nonradiative energy-transfer processes in Cd(1-x)Mn(x)Fe crystalsSuchocki, A. / Kalinski, Z. / Langer, J.M. / Powell, R.C. et al. | 1992
- 28
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Nonradiative energy‐transfer processes in Cd1−xMnxF2 crystalsSuchocki, Andrzej / Kalinski, Zbigniew / Langer, Jerzy M. / Powell, Richard C. et al. | 1992
- 37
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Fluence limiting via photorefractive two‐beam couplingWood, Gary L. / Clark, William W. / Salamo, Gregory J. / Mott, Andrew / Sharp, Edward J. et al. | 1992
- 45
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High‐efficiency second‐Stokes‐order Raman conversion of KrF laser radiation in hydrogenHuo, Yunsheng / Shimizu, Kouki / Yagi, Takashi et al. | 1992
- 49
-
Ion‐implanted optical waveguides in KTaO3Wong, J. Y. C. / Zhang, L. / Kakarantzas, G. / Townsend, P. D. / Chandler, P. J. / Boatner, L. A. et al. | 1992
- 53
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Photothermal deflection measurements for monitoring heat transfer during modulated laser heating of solidsShannon, Mark A. / Rostami, Ali A. / Russo, Richard E. et al. | 1992
- 64
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Gain measurements at 780.8 nm in a copper hollow anode cathode laserZhang, Zhigang / Perry, N. D. / Tobin, R. C. et al. | 1992
- 70
-
Diffraction of light by a focused ultrasonic waveHuang, J. / Nissen, J. A. / Bodegom, Erik et al. | 1992
- 76
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Optimal heating and cooling strategies for heat exchanger designAndresen, Bjarne / Gordon, J. M. et al. | 1992
- 80
-
Droplet diameter, flux, and total current measurements in an electrohydrodynamic sprayDunn, Patrick F. / Snarski, Stephen R. et al. | 1992
- 85
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Laser‐plasma x‐ray generation using an injection‐mode‐locked XeCl excimer laserXenakis, D. / Hutchinson, M. H. R. / O’Neill, F. / Turcu, I. C. E. et al. | 1992
- 94
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Breakdown characteristics in nonplanar geometries and hollow cathode pseudospark switchesPak, Hoyoung / Kushner, Mark J. et al. | 1992
- 101
-
Theoretical and experimental study of a high‐current vacuum arc in a uniform axial magnetic fieldMorimiya, Osami et al. | 1992
- 108
-
Numerical study of single‐vapor‐bubble dynamics in insulating liquids initiated by electrical current pulsesOliveri, S. / Kattan, R. / Denat, A. et al. | 1992
- 113
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Numerical simulation of plasma sheath expansion, with applications to plasma‐source ion implantationEmmert, G. A. / Henry, M. A. et al. | 1992
- 118
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Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxyParry, C. P. / Kubiak, R. A. / Newstead, S. M. / Whall, T. E. / Parker, E. H. C. et al. | 1992
- 126
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Elevated‐temperature 3‐MeV Si and 150‐keV Ge implants in InP:FeRao, Mulpuri V. / Nadella, Ravi K. / Holland, O. W. et al. | 1992
- 133
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Monte Carlo simulation of ion‐channeling spectra from partially damaged crystalsNakano, Hirohiko / Kido, Yoshiaki et al. | 1992
- 140
-
Cell thickness and surface pretilt angle measurements of a planar liquid‐crystal cell with obliquely incident lightOng, Hiap Liew et al. | 1992
- 145
-
Studies of coherent and diffuse x‐ray scattering by porous siliconBellet, Daniel / Dolino, Ge´rard / Ligeon, Mireille / Blanc, Pierre / Krisch, Micha¨el et al. | 1992
- 150
-
Solute pairing in solution‐hardened Cu‐Ni, Cu‐Pd binary, and Cu‐Ni‐Pd ternary fcc alloysWong, Joe / Nixon, W. E. / Mitchell, J. W. / Laderman, S. S. et al. | 1992
- 158
-
Scanning force microscopy observation of GaAs and AlGaAs surfaces grown by molecular beam epitaxyFatt, Yoon Soon et al. | 1992
- 164
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The effect of low‐thermal‐budget anneals and furnace ramps on the electrical activation of arsenicOrlowski, Marius / Subrahmanyan, Ravi / Huffman, Gary et al. | 1992
- 170
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Specific heat and thermal diffusivity of strontium barium niobate (Sr1−xBaxNb2O6) single crystalsChoy, C. L. / Leung, W. P. / Xi, T. G. / Fei, Y. / Shao, C. F. et al. | 1992
- 174
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The effect of stress‐induced voiding on electromigrationLytle, S. A. / Oates, A. S. et al. | 1992
- 179
-
Growth and characterization of GaAlAs/GaAs and GaInAs/InP structures: The effect of a pulse metalorganic flowSacilotti, M. / Horiuchi, L. / Decobert, J. / Brasil, M. J. / Cardoso, L. P. / Ossart, P. / Ganie`re, J. D. et al. | 1992
- 187
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Optimization of growth conditions of vapor deposited Mo/Si multilayersStearns, Mary Beth / Chang, Chung‐Hee / Stearns, Daniel G. et al. | 1992
- 196
-
Liquid silicide formation on the Si wafer free surface during Ni diffusion at 1200 °CLi, Jianxing / Yang, Woun‐Suck / Tan, Teh Y. / Chevacharoenkul, Sopa / Chapman, Richard et al. | 1992
- 204
-
Organometallic vapor‐phase epitaxy of Hg1−xCdxTe on {211}‐oriented substratesBevan, M. J. / Doyle, N. J. / Temofonte, T. A. et al. | 1992
- 211
-
High structural quality Ga1−xInxSb/InAs strained‐layer superlattices grown on GaSb substratesMiles, R. H. / Chow, D. H. / Hamilton, W. J. et al. | 1992
- 215
-
Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantationHailemariam, E. / Pearton, S. J. / Hobson, W. S. / Luftman, H. S. / Perley, A. P. et al. | 1992
- 221
-
Time‐resolved reflectance studies of surface melting during laser‐assisted deposition with a modulated laser sourceComita, Paul B. / Price, Peter E. / Kodas, Toivo T. et al. | 1992
- 227
-
Laser generation and detection of surface acoustic waves: Elastic properties of surface layersNeubrand, A. / Hess, P. et al. | 1992
- 239
-
The electronic structure of the impurity boron‐vacancy complex in transition metal γ‐FeWang, Chongyu / Chen, Liqun / Li, Keng / Gao, Zhe / Wang, Bing et al. | 1992
- 246
-
Deep levels in undoped horizontal Bridgman GaAs by Fourier transform photoconductivity and Hall effectMitchel, W. C. / Brown, Gail J. / Rea, Laura S. / Smith, S. R. et al. | 1992
- 252
-
Anomalous optical and electrical recovery processes of the photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenideSamitier, J. / Marco, S. / Pe´rez‐Rodri´guez, A. / Morante, J. R. / Boher, P. / Renaud, M. et al. | 1992
- 260
-
Alloy scattering in p‐type AlxGa1−xAsLook, D. C. / Lorance, D. K. / Sizelove, J. R. / Stutz, C. E. / Evans, K. R. / Whitson, D. W. et al. | 1992
- 267
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Influence of hydrogen dilution on the optoelectronic properties of glow discharge amorphous silicon carbon alloysAlvarez, F. / Sebastiani, M. / Pozzilli, F. / Fiorini, P. / Evangelisti, F. et al. | 1992
- 273
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Two‐step rapid thermal annealing of B‐ and As‐implanted polycrystalline silicon filmsSicart, J. / Jeanjean, P. / Sellitto, P. / Robert, J. L. / Chaussemy, G. / Laugier, A. et al. | 1992
- 277
-
Theoretical calculation of exciton optical‐absorption intensity in III‐V and II‐VI semiconductor quantum wellsSugawara, Mitsuru et al. | 1992
- 281
-
Electronic and photoluminescent properties of InP prepared by flow modulation epitaxyNeuhalfen, A. J. / Wessels, B. W. et al. | 1992
- 289
-
Interfacial reactions in the Pd/a‐Si/c‐Si systemEdelman, F. / Cytermann, C. / Brener, R. / Eizenberg, M. / Weil, R. / Beyer, W. et al. | 1992
- 296
-
Effective mass and ground state of AlAs quantum wells studied by magnetoresistance measurementsMaezawa, Koichi / Mizutani, Takashi / Yamada, Syoji et al. | 1992
- 300
-
Electric‐field dependence of the hole drift mobility in molecularly doped polymers: Importance of the disorder of hopping sitesKanemitsu, Yoshihiko / Funada, Hiroshi / Masumoto, Yasuaki et al. | 1992
- 300
-
Electric-field dependence on the hole drift mobility in molecularly doped polymers: Importance of the disorder of hopping sitesKanemitsu, Y. / Funada, H. / Masumoto, Y. et al. | 1992
- 304
-
Wigner trajectories in resonant‐tunneling diodes under transverse magnetic fieldHsu, Y. / Wu, G. Y. et al. | 1992
- 308
-
Minority electron transport across p+ doped submicron layers of GaAsOsman, M. A. et al. | 1992
- 314
-
Effects of annealing InP(110) surfaces on Schottky barrier heights at Pd/InP(110) interfacesYamada, Masao / Spindt, Chris J. / Miyano, Ken E. / Meissner, Paul L. / Herrera‐Gomez, Alberto / Kendelewicz, Tom / Spicer, William E. et al. | 1992
- 318
-
Determination of the interface charge between an epilayer and a substrate using capacitance‐voltage measurementsGoren, D. / Amir, N. / Nemirovsky, Y. et al. | 1992
- 326
-
Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond opticsZhang, X.‐C. / Auston, D. H. et al. | 1992
- 339
-
On extrinsic effects in the surface impedance of cuprate superconductors by weak linksHalbritter, J. et al. | 1992
- 344
-
High‐frequency properties of superconducting Y‐Ba‐Cu‐oxide thin filmsRamakrishnan, E. S. / Su, Ming‐Yih / Howng, Wei‐Yean et al. | 1992
- 344
-
High-frequency properties of supercondicting Y-Ba-Cu-oxide thin filmsRamakrishnan, E.S. / Su, M.Y. / Howng, W.Y. et al. | 1992
- 347
-
Polishing of YBa2Cu3O7−y by He‐ion etchingInoue, Noriyuki / Takahashi, Yasuo / Sudo, Takashi / Sakamoto, Kageyoshi / Shima, Toshio / Nishi, Yoshitake et al. | 1992
- 350
-
Abnormal Tc change of Bi(1.6)Pb(0.4)Sr2Ca2(Cu(1-z)Ti(z)(3)O(x) (0.01 < z < 0.1)Nishi, Y. / Nozaki, K. / Kurotaki, T. / Kita, Y. / Oguri, K. et al. | 1992
- 350
-
Abnormal Tc change of Bi1.6Pb0.4Sr2Ca2(Cu1−zTiz)3Ox (0.01<z<0.1)Nishi, Yoshitake / Nozaki, Kazuo / Kurotaki, Takuya / Kita, Yuichiro / Oguri, Kazuya et al. | 1992
- 353
-
Induced anisotropies in NiCo obliquely deposited films and their effect on magnetic domainsAitlamine, H. / Abelmann, L. / Puchalska, I. B. et al. | 1992
- 362
-
Growth and magnetoresistance of Fe/Cr superlattices on Ge(100)Folkerts, W. / Hoving, W. / Coene, W. et al. | 1992
- 366
-
Competing anisotropies and magnetization processes in the pseudoternary (HoxEr1−x)Fe10V2 tetragonal systemAlgarabel, P. A. / Pareti, L. / Marquina, C. / Solzi, M. / Ibarra, M. R. / Marusi, G. et al. | 1992
- 370
-
Electron-paramagnetic-resonance study of the Cr(3+) and Ni(2+) ions and the (SCl)(2-) defects in FeS2Yu, S.T. / Wu, C.J. et al. | 1992
- 370
-
Electron‐paramagnetic‐resonance study of the Cr3+ and Ni2+ ions and the (SCl)2− defect in FeS2Yu, Jiang‐Tsu / Wu, Ching‐Jiun / Huang, Ying‐Sheng / Lin, Shoei‐Sheng et al. | 1992
- 376
-
Multi‐ion‐beam reactive sputter deposition of ferroelectric Pb(Zr,Ti)O3 thin filmsKrupanidhi, S. B. / Hu, H. / Kumar, V. et al. | 1992
- 389
-
Magnetic‐field effects on vacuum insulator flashoverLehr, M. / Korzekwa, R. / Krompholz, H. / Kristiansen, M. et al. | 1992
- 395
-
Optical properties of amorphous InSbAdachi, S. / Miyazaki, T. / Hamadate, S. et al. | 1992
- 398
-
Photointercalation characteristics of thin WO3 filmsNagasu, Masahiro / Koshida, Nobuyoshi et al. | 1992
- 403
-
Effects of annealing on infrared and thermal‐effusion spectra of sputtered a‐Si:H alloysTalukder, G. / Cornish, J. C. L. / Jennings, P. / Hefter, G. T. / Clare, B. W. / Livingstone, J. et al. | 1992
- 410
-
The design, synthesis, and evaluation of chromophores for second‐harmonic generation in a polymer waveguideBurland, D. M. / Miller, R. D. / Reiser, O. / Twieg, R. J. / Walsh, C. A. et al. | 1992
- 418
-
Rayleigh scattering in Sr0.61Ba0.39Nb2O6Wilde, Jeffrey P. / Wilde, Richard E. et al. | 1992
- 422
-
Strain, doping, and disorder effects in GaAs/Ge/Si heterostructures: A Raman spectroscopy investigationMlayah, A. / Carles, R. / Leycuras, A. et al. | 1992
- 428
-
Optical constants of epsilon-GaSeSadao Adachi / Yoichi Shindo et al. | 1992
- 428
-
Optical constants of ε‐GaSeAdachi, Sadao / Shindo, Yo¯ichi et al. | 1992
- 432
-
Determination of the charge carrier concentration across growth striations in n‐GaAs by Raman spectroscopyHerms, M. / Irmer, G. / Monecke, J. / Oettel, O. et al. | 1992
- 436
-
Influence of growth conditions and annealing parameters on the near‐infrared optical absorption of epitaxial magnetic garnet filmsJovanovic, C. / Sure, S. / Clausing, E. / Scharfschwerdt, C. / Neumann, M. / Alwes, H. / Lorenz, K. / Do¨tsch, H. / Tolksdorf, W. / Willich, P. et al. | 1992
- 441
-
Electronic structure of some I–III–VI2 chalcopyrite semiconductors studied by synchrotron radiationTakarabe, K. / Kawai, K. / Minomura, S. / Irie, T. / Taniguchi, M. et al. | 1992
- 441
-
Electric structure of some I-III-VI(2) chalcopyrite semiconductors studied by synchrotron radiationTakarabe, K. / Kawai, K. / Minomura, S. / Irie, T. / Taniguchi, M. et al. | 1992
- 448
-
Relationships between the plasma environment and the composition and optical properties of plasma‐polymerized thin films produced in rf discharges of C2H2‐SF6 mixturesDurrant, Steven F. / Mota, Roge´rio P. / Bica de Moraes, Ma´rio A. et al. | 1992
- 456
-
Erbium doping in InGaAsP grown by liquid‐phase epitaxyWu, Meng‐Chyi / Chen, En‐Hsing / Chin, Tsung‐Shune / Tu, Yuan‐Kuang et al. | 1992
- 462
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Plasma etching of Ti in fluorine‐containing feedsd’Agostino, R. / Fracassi, F. / Pacifico, C. / Capezzuto, P. et al. | 1992
- 472
-
Dynamics of a 700‐kA 19‐MeV electron beam in a short gas cellSanford, T. W. L. / Poukey, J. W. / Mock, R. C. / Welch, D. R. et al. | 1992
- 483
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Thermal effects in Hg‐diffused long‐wave infrared HgCdTe photodiodesReisinger, A. R. / Weaver, F. J. / Rader, M. A. / Voelker, J. J. / Caputi, S. J. / Myers, T. H. / Shanley, J. F. et al. | 1992
- 489
-
The preparation and characterization of nearly hysteresis‐free metal‐nitride‐silicon capacitors on both p‐ and n‐type silicon substratesLau, W. S. et al. | 1992
- 494
-
Electrical characteristics at 4.2 K and high magnetic fields in metal‐oxide‐semiconductor field‐effect transistors utilizing sputter‐deposited gate‐oxide filmsSuyama, S. / Okamoto, A. / Shirai, S. / Serikawa, T. / Takaoka, S. / Murase, K. et al. | 1992
- 498
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Analytic calculation of electron transmission probability for planar‐doped potential barrier devicesYoung, Mary R. / Demas, Nicholas G. / Ventrice, Carl A. / Kanousis, Demetrios P. et al. | 1992
- 503
-
Strong magnetoresistance reduction at the coercive‐field crossover of two uncoupled magnetic filmsVe´lu, E. / Dupas, C. / Nabhan, W. / Trigui, F. / Renard, J. P. / Renard, D. et al. | 1992
- 506
-
Formation of ferroelectric domains in a copolymer P(VDF–TrFE)Ohigashi, H. / Kagami, N. / Li, G. R. et al. | 1992
- 509
-
Effect of hydrogenation on deep‐level traps in InP on GaAsChen, Y. F. / Sung, K. C. / Chen, W. K. / Lue, Y. S. et al. | 1992
- 509
-
Effect of hydrogenation of deep-level traps in InP on GaAsChen, Y.F. / Sung, K.C. / Chen, W.K. / Lue, Y.S. et al. | 1992
- 512
-
Large third‐order optical nonlinearities of nickel‐dithiolene‐doped polymethylmethacrylateWinter, C. S. / Oliver, S. N. / Rush, J. D. / Hill, C. A. S. / Underhill, A. E. et al. | 1992
- 515
-
Understanding quantum wires with circular bendsSprung, D. W. L. / Wu, Hua / Martorell, J. et al. | 1992
- 518
-
Strength of direct optical transition between conduction subbands of a Si/GexSi1−x superlatticeYoo, Jay S. / Lee, Hong H. et al. | 1992
- 521
-
Raman analysis of laser‐annealed amorphous carbon filmsBowden, M. / Gardiner, D. J. / Southall, J. M. et al. | 1992
- 524
-
Electronic surface state (Tamm state) under electric field in semiconductor superlatticesHuang, F. Y. / Morkoc¸, H. et al. | 1992
- 527
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Enhancement of gold solubility in silicon wafersLi, Jianxing / Yang, Woun‐Suck / Tan, Teh Y. et al. | 1992
- 530
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Positron annihilation at the Si/SiO2 interfaceLeung, T. C. / Weinberg, Z. A. / Asoka‐Kumar, P. / Nielsen, B. / Rubloff, G. W. / Lynn, K. G. et al. | 1992
- 533
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Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor depositionTsukamoto, S. / Nagamune, Y. / Nishioka, M. / Arakawa, Y. et al. | 1992
- 536
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Effects of hydrogen on the Schottky barrier of Ti/n‐GaAs diodesJin, S. X. / Wang, L. P. / Yuan, M. H. / Chen, J. J. / Jia, Y. Q. / Qin, G. G. et al. | 1992
- 539
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Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxyMartelli, Faustino / Proietti, Maria Grazia / Simeone, Maria Gabriella / Bruni, Maria Rita / Zugarini, Marco et al. | 1992
- 542
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Thin films of Pd/Ni alloys for detection of high hydrogen concentrationsHughes, R. C. / Schubert, W. K. et al. | 1992
- 545
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Erratum: ‘‘Infrared study of the Si—H stretching band in a‐SiC:H’’ [J. Appl. Phys. 69, 7805 (1991)]Koropecki, R. R. / Alvarez, F. / Arce, R. et al. | 1992