Analysis of MBE growth and atomic exchange in thin highly strained InAs layers (French)
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- New search for: Gerard, J.M.
In:
Microscopy Microanalysis Microstructures
;
5
, 3
;
213-236
;
1994
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ISSN:
- Article (Journal) / Print
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Title:Analysis of MBE growth and atomic exchange in thin highly strained InAs layers
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Additional title:Analyse der Molekularstrahlepitaxie und des Atomaustausches von mechanisch gespannten Schichten aus Indiumarsenid
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Contributors:d'Anterroches, C. ( author ) / Gerard, J.M. ( author )
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Published in:Microscopy Microanalysis Microstructures ; 5, 3 ; 213-236
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Publisher:
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Publication date:1994
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Size:24 Seiten, 17 Bilder, 34 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:French
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Keywords:MBE (Molekularstrahlepitaxie) , Epitaxialwachstum , GaAs (Galliumarsenid) , Indium , InAs (Indiumarsenid) , Kristallgitter , dünne Schicht , mechanische Spannung , Quantentopf , Übergitter , InGaAs (Indium-Gallium-Arsenid) , Bildverarbeitung , Störstelle (Kristall) , Elektronenmikroskop , Grenzschicht , Heteroübergang , Photolumineszenz , optisches Messverfahren , Bandabstand (Energielücke) , Kristallorientierung , Schichtdicke , Rasterelektronenmikroskop , Epitaxie , Kristallwachstum , Grenzfläche , Rastermikroskop
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Source:
Table of contents – Volume 5, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 171
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EditorialHawkes, P.W. et al. | 1994
- 173
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EELS fingerprint of Al-coordination in silicatesHansen, P.L. et al. | 1994
- 183
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Effects of dislocation strain fields on Bragg lines in an Al 70)Co15Ni15 decagonal quasicrystal studied by an improved LACBED techniqueYan, Yanfa et al. | 1994
- 189
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Laterally graded division parameter layered synthetic microstructuresGuichet, C. et al. | 1994
- 203
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TEM investigation of iron segregation modes in CuAlFe dilute alloysHauet, A. et al. | 1994
- 213
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Analysis of MBE growth and atomic exchange in thin highly strained InAs layersD'Anterroches, C. et al. | 1994