Control of bonded-hydrogen in plasma-deposited silicon nitrides: Combined plasma-assisted deposition and rapid thermal annealing for the formation of device-quality nitride layers for applications in multilayer dielectrics (English)
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In:
Journal of Non-Crystalline Solids
;
187
, Complete
;
340-346
;
1995
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ISSN:
- Article (Journal) / Print
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Title:Control of bonded-hydrogen in plasma-deposited silicon nitrides: Combined plasma-assisted deposition and rapid thermal annealing for the formation of device-quality nitride layers for applications in multilayer dielectrics
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Additional title:Kontrolle des gebundenen Wasserstoffs in Plasma-abgeschiedenen Siliciumnitriden: Kombination der Plasma-unterstützten Abscheidung und der schnellen thermischen Behandlung zur Bildung von Nitridschichten mit Gerätequalität zur Anwendung in Mehrschicht Dielektrika
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Contributors:
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Published in:Journal of Non-Crystalline Solids ; 187, Complete ; 340-346
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Publisher:
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Publication date:1995
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Size:7 Seiten, 4 Bilder, 8 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:Gasplasma , Gasphasenabscheidung , Siliciumnitrid , dünne Schicht , Wärmebehandlung , elektrischer Isolierstoff , amorphes Silicium , Silicium-Gate-Technologie , Dünnschicht-FET , Feldeffekttransistor , MOS-Kondensator , Wasserstoff , chemische Bindung , Silicium , Aluminium , Auger-Elektronenspektrometrie , Infrarotspektrometrie , Oxidschicht , MIS-Struktur , Oxidation , Metallisieren
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Source:
Table of contents – Volume 187, Issue Complete
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 23
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RTP - temperature monitoring by means of oxidationZöllner, J.P. / Cimalla, V. / Pezoldt, J. et al. | 1995
- 29
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Low-temperature voltage enhanced UV-assisted oxidation of siliconDolique, A. / Reader, A.H. et al. | 1995
- 35
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Rapid thermal annealing of SiO2 for VLSI applicationsPaskaleva, A. / Atanassova, E. / Beshkov, G. et al. | 1995
- 49
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Fluorinated interlayer dielectric films in ULSI multilevel interconnectionsHomma, T. et al. | 1995
- 60
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Deposition of ultra-thin oxide dielectrics for MOSFETs by a combination of low-temperature plasma-assisted oxidation, and intermediate and high-temperature rapid thermal processingLucovsky, G. / Misra, V. / Hattangady, S.V. / Yasuda, T. / Wortman, J.J. et al. | 1995
- 66
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New substances for atomic-layer deposition of silicon dioxideMorishita, S. / Gasser, W. / Usami, K. / Matsumura, M. et al. | 1995
- 70
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Dual-mode radio frequency/microwave plasma deposition of amorphous silicon oxide thin filmsEtemadi, R. / Godet, C. / Kildemo, M. / Bouree, J.E. / Brenot, R. / Drevillon, B. et al. | 1995
- 81
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Effects of plasma treatment on the properties of room-temperature liquid-phase deposited (LPD) oxide filmsYeh, C.F. / Lin, S.S. et al. | 1995
- 86
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Oxygen-rich phase segregation in PECVD a-SiO(x):H semi-insulatorsSuchaneck, G. / Steinke, O. / Alhallani, B. / Schade, K. et al. | 1995
- 106
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Boron diffusion in SiO2 based dielectric thin layersNedelec, S. / Mathiot, D. / Gauneau, M. / Straboni, A. et al. | 1995
- 112
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Formation of visible photoluminescence bands in Si(+)-implanted silica glasses and thermal oxide films on crystalline SiShimizu-Iwayama, T. / Fujita, K. / Akai, M. / Nakao, S. / Saitoh, K. et al. | 1995
- 264
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Measurement and analysis of hydrogen depth profiles in MOS-structures by using the 15.N nuclear reaction methodKrauser, J. / Wulf, F. / Bräunig, D. et al. | 1995
- 287
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A comparative study on structural and electronic properties of PECVD a-SiO(x) with a-SiN(x)Maeda, K. / Sakamoto, N. / Umezu, I. et al. | 1995
- 291
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The effect of hydrogen and temperature on the optical gaps of silicon nitride and comparative stoichiometry studies on SiN thin filmsPetalas, J. / Logothetidis, S. / Boultadakis, S. / Markwitz, A. et al. | 1995
- 324
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Influence of gas residence time on the deposition of nitrogen-rich amorphous silicon nitrideMurley, D.T. / Gibson, R.A.G. / Dunnett, B. / Goodyear, A. / French, I.D. et al. | 1995
- 329
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Influence of the deposition parameters on the bonding and optical properties of SiN(x) ECR filmsGarcia, S. / Martin, J.M. / Martil, I. / Fernandez, M. / Iborra, E. / Gonzalez-Diaz, G. et al. | 1995
- 334
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Room-temperature deposition of SiN(x) using ECR-PECVD for III/V semiconductor microelectronics in lift-off techniqueWiersch, A. / Heedt, C. / Schneiders, S. / Tilders, R. / Buchali, F. / Kuebart, W. / Prost, W. / Tegude, F.J. et al. | 1995
- 340
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Control of bonded-hydrogen in plasma-deposited silicon nitrides: Combined plasma-assisted deposition and rapid thermal annealing for the formation of device-quality nitride layers for applications in multilayer dielectricsLu, Z. / He, S.S. / Ma, Y. / Lucovsky, G. et al. | 1995
- 347
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Plasma-enhanced silicon nitride deposition for thin film transistor applicationsQuinn, L.J. / Mitchell, S.J.N. / Armstrong, B.M. / Gamble, H.S. et al. | 1995
- 353
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Deposition of amorphous silicon nitride thin films by CO2 laser-induced chemical vapour depositionSerra, J. / Szörenyi, T. / Fernandez, D. / Gonzalez, P. / Garcia, E. / Pou, J. / Leon, B. / Perez-Amor, M. et al. | 1995
- 361
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Structural and electrical properties of thin SiO2 layers grown by RTP in a mixture of N2O and O2Bauer, A.J. / Burte, E.P. et al. | 1995
- 380
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Structural and optical properties of nitrided silicon oxide layers rapid thermally grown in a pure N2O ambientHartmannsgruber, E. / Rossow, U. / Hoyer, A. / Lange, P. et al. | 1995
- 403
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Effect of process parameters on the properties of electron cyclotron resonance plasma deposited silicon-oxynitrideBulkin, P.V. / Swart, P.L. / Lacquet, B.M. et al. | 1995
- 409
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Electrical properties of Au/BN/InP MIS diodesBaehr, O. / Barrada, M. / Bath, A. / Lepley, B. / Thevenin, P. / Schoonman, J. et al. | 1995
- 420
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Structure rearrangement and electrochromic properties of amorphous tungsten trioxide filmsShiyanovskaya, I.V. et al. | 1995
- 425
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Low pressure chemical vapour deposition of tantalum pentoxide thin layersBurte, E.P. / Rausch, N. et al. | 1995
- 430
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Investigation of the film growth of a new titanium precursor for MOCVDLang, F.R. / Plappert, E.C. / Dahmen, K.H. / Hauert, R. / Nebiker, P. / Döbeli, M. et al. | 1995
- 435
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Low temperature deposition of gallium phosphate amorphous dielectric thin films by aerosol CVDTourtin, F. / Daviero, S. / Ibanez, A. / Haidoux, A. / Avinens, C. / Philippot, E. et al. | 1995
- 443
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Fabrication, characterization and electro-optic performances of proton-implanted waveguides in LiNbO3Boudrioua, A. / Moretti, P. / Loulergue, J.C. et al. | 1995
- 448
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Photo-assisted switching and trapping in BaTiO3 and Pb(Zr, Ti)O3 ferroelectricsWarren, W.L. / Dimos, D. et al. | 1995
- 453
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Optical properties of sol-gel derived ferroelectric filmsBertolotti, M. / Mura, S. / Pennella, E. / Senesi, F. / Sibilia, C. / Montenero, A. / Gnappi, G. / Pigoni, S. et al. | 1995
- 457
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Chemical interaction in ion-implanted amorphous SiO2 and application to formation and modification of nanosize colloid particlesHosono, H. et al. | 1995
- 473
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Light-assisted deposition of silicon-based dielectrics for optical interconnection in optoelectronicsSayah, A. / Nissim, Y.I. et al. | 1995
- 484
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Properties and applications of electron cyclotron plasma deposited SiO(x)N(y) films with graded refractive index profilesBulkin, P.V. / Swart, P.L. / Lacquet, B.M. et al. | 1995