Resonant exciton effects in InAs monolayer insertions in a GaAs matrix (English)
- New search for: Wang, P.D.
- New search for: Ledentsov, N.N.
- New search for: Sotomayor Torres, C.M.
- New search for: Zhukov, A.E.
- New search for: Kopev, P.S.
- New search for: Ustinov, V.M.
- New search for: Wang, P.D.
- New search for: Ledentsov, N.N.
- New search for: Sotomayor Torres, C.M.
- New search for: Zhukov, A.E.
- New search for: Kopev, P.S.
- New search for: Ustinov, V.M.
In:
Journal of Applied Physics
;
79
, 9
;
7164-7168
;
1996
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ISSN:
- Article (Journal) / Print
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Title:Resonant exciton effects in InAs monolayer insertions in a GaAs matrix
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Additional title:Resonanz-Excitonen-Effekte in InAs-Monoschicht-Insertionen in einer GaAs-Matrix
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Contributors:Wang, P.D. ( author ) / Ledentsov, N.N. ( author ) / Sotomayor Torres, C.M. ( author ) / Zhukov, A.E. ( author ) / Kopev, P.S. ( author ) / Ustinov, V.M. ( author )
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Published in:Journal of Applied Physics ; 79, 9 ; 7164-7168
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Publisher:
-
Publication date:1996
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Size:5 Seiten, 4 Bilder, 1 Tabelle, 34 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:Exciton , Indiumarsenid , Galliumarsenid , Photolumineszenz , Quantentopf , Molekularstrahlepitaxie , Phonon , Linearpolarisation , Zirkularpolarisation , Resonanzstreuung , magnetisches Feld , dünne Schicht , mechanische Spannung , halbisolierendes Substrat , Übergitter , Substrattemperatur , Elektronenbeugung , Transmissionselektronenmikroskop , Laseranregungsmethode , Anregungsspektrum , Relaxation , mechanische Spannungsverteilung
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Source:
Table of contents – Volume 79, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 6653
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Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristicsIwata, Seiichi / Ishizaka, Akitoshi et al. | 1996
- 6714
-
Electron inelastic mean free path and stopping power modelling in alkali halides in the 50 eV–10 keV energy rangeBoutboul, T. / Akkerman, A. / Breskin, A. / Chechik, R. et al. | 1996
- 6722
-
Electron dynamics in a free electron laser with a reversed axial guide fieldBourdier, A. / Gardent, D. et al. | 1996
- 6729
-
The pulse propagation problem in free electron lasers: Gain parametrization formulaeDattoli, G. / Giannessi, L. / Torre, A. / Segreto, A. et al. | 1996
- 6735
-
Determination of nonlinear susceptibilities by transforming random variablesMurray, J. T. / Bonilla, S. / Jiang, J. P. / Tajalli, H. / Powell, Richard C. / Peyghambarian, N. et al. | 1996
- 6741
-
Quasioptics of second-order Bragg interaction in a thin film of waveguideSo, D. W. C. / Seshadri, S. R. et al. | 1996
- 6741
-
Quasioptics of second‐order Bragg interaction in a thin film optical waveguideSo, Daniel W. C. / Seshadri, S. R. et al. | 1996
- 6750
-
Influence of the depolarization effect on third‐harmonic generation in quantum wellsZałużny, M. / Bondarenko, V. et al. | 1996
- 6755
-
A second look at electrokinetic phenomena in boilingSnyder, Trevor J. et al. | 1996
- 6761
-
Effective conductivity of composites containing aligned spheroidal inclusions of finite conductivityLu, Shih‐Yuan / Lin, Hway‐Chi et al. | 1996
- 6770
-
Conversion of a whistler wave into a controllable helical wiggler magnetic fieldKalluri, D. K. et al. | 1996
- 6775
-
Zero‐dimensional hybrid model for analysis of discharge excited XeCl lasersLamrous, O. / Gaouar, A. / Yousfi, M. et al. | 1996
- 6785
-
Plasma distribution of cathodic arc deposition systemsAnders, Simone / Raoux, Se´bastien / Krishnan, Kannan / MacGill, Robert A. / Brown, Ian G. et al. | 1996
- 6791
-
Vacuum arc plasma jet propagation in a toroidal ductAlterkop, B. / Gidalevich, E. / Goldsmith, S. / Boxman, R. L. et al. | 1996
- 6803
-
Characterization of TaSi2–Si composites for use as wide‐bandpass optical elements for synchrotron radiationStock, S. R. / Rek, Z. U. / Goorsky, M. S. et al. | 1996
- 6811
-
Study of local stress, morphology, and liquid‐crystal alignment on buffed polyimide surfacesKikuchi, Hirotsugu / Logan, J. A. / Yoon, Do Y. et al. | 1996
- 6818
-
Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0.35Ga0.65As/GaAs multiple quantum well structuresBu¨rkner, S. / Baeumler, M. / Wagner, J. / Larkins, E. C. / Rothemund, W. / Ralston, J. D. et al. | 1996
- 6826
-
A magneto‐optical study of interdiffusion in InGaAs/InP quantum wells: Effects of heat treatment, substrates, and dopantsWong, S. L. / Nicholas, R. J. / Martin, R. W. / Thompson, J. / Wood, A. / Moseley, A. / Carr, N. et al. | 1996
- 6834
-
Morphological stability of a heterophase interface under electromigration conditionsKlinger, L. / Levin, L. / Srolovitz, D. et al. | 1996
- 6840
-
Stability of a circular void in a passivated, current‐carrying metal filmMahadevan, Mohan / Bradley, R. Mark et al. | 1996
- 6848
-
Thermal and optical characterization of the calcium phosphate biomaterial hydroxyapatiteBento, A. C. / Almond, D. P. / Brown, S. R. / Turner, I. G. et al. | 1996
- 6853
-
Surface Debye temperature measurement with reflection high‐energy electron diffractionElsayed‐Ali, H. E. et al. | 1996
- 6858
-
X‐ray truncation rod study of Ge(001) surface roughening by molecular beam homoepitaxial growthHong, Hawoong / Aburano, R. D. / Chung, Ki‐Sup / Lin, D.‐S. / Hirschorn, E. S. / Chiang, T.‐C. / Chen, Haydn et al. | 1996
- 6865
-
Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H‐terminated Si(100)Krastev, E. T. / Voice, L. D. / Tobin, R. G. et al. | 1996
- 6872
-
Depth dependence of residual strains in polycrystalline Mo thin films using high‐resolution x‐ray diffractionMalhotra, S. G. / Rek, Z. U. / Yalisove, S. M. / Bilello, J. C. et al. | 1996
- 6880
-
Effect of surface free energy of underlayer materials on crystal growth of Co polycrystalline filmsKitakami, O. / Okamoto, S. / Shimada, Y. et al. | 1996
- 6884
-
Interface characterization in electrodeposited Cu–Co multilayersNallet, P. / Chassaing, E. / Walls, M. G. / Hy¨tch, M. J. et al. | 1996
- 6890
-
Dopant‐induced lattice dilation in n‐type InP homoepitaxial layersFerrari, C. / Franzosi, P. et al. | 1996
- 6895
-
Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInPMurata, H. / Ho, I. H. / Su, L. C. / Hosokawa, Y. / Stringfellow, G. B. et al. | 1996
- 6900
-
Effects of V/III ratio on ordering in GaInP: Atomic scale mechanismsChun, Y. S. / Murata, H. / Hsu, T. C. / Ho, I. H. / Su, L. C. / Hosokawa, Y. / Stringfellow, G. B. et al. | 1996
- 6907
-
Ion‐beam synthesis of amorphous SiC films: Structural analysis and recrystallizationSerre, C. / Calvo‐Barrio, L. / Pe´rez‐Rodri´guez, A. / Romano‐Rodri´guez, A. / Morante, J. R. / Pacaud, Y. / Ko¨gler, R. / Heera, V. / Skorupa, W. et al. | 1996
- 6914
-
Structural investigation of two carbon nitride solids produced by cathodic arc deposition and nitrogen implantationMerchant, A. R. / McCulloch, D. G. / McKenzie, D. R. / Yin, Y. / Hall, L. / Gerstner, E. G. et al. | 1996
- 6920
-
Comprehensive Rutherford backscattering and channeling study of ion‐beam‐synthesized ErSi1.7 layersWu, M. F. / Vantomme, A. / De Wachter, J. / Degroote, S. / Pattyn, H. / Langouche, G. / Bender, H. et al. | 1996
- 6926
-
Kinetics of residual stress evolution in evaporated silicon dioxide films exposed to room airLeplan, H. / Robic, J. Y. / Pauleau, Y. et al. | 1996
- 6932
-
Comparison of the diffusion barrier properties of chemical‐vapor‐deposited TaN and sputtered TaN between Cu and SiTsai, M. H. / Sun, S. C. / Tsai, C. E. / Chuang, S. H. / Chiu, H. T. et al. | 1996
- 6939
-
Empirical pseudopotential calculations ofLong, Fei / Harrison, P. / Hagston, W. E. et al. | 1996
- 6943
-
Temperature dependence of the indirect energy gap in crystalline siliconAlex, V. / Finkbeiner, S. / Weber, J. et al. | 1996
- 6947
-
Traps in undoped semi‐insulating InP obtained by high temperature annealingMarrakchi, G. / Cherkaoui, K. / Karoui, A. / Hirt, G. / Mu¨ller, G. et al. | 1996
- 6947
-
Traps in undoped semi-insulating InP obtaining by high temperature annealingMarrakchi, G. / Cherkaoui, K. / Karoui, A. / Hirt, G. / Müller, G. et al. | 1996
- 6951
-
Distinction between electron and hole traps in semi‐insulating GaAsKiliulis, R. / Kazukauskas, V. / Bourgoin, J. C. et al. | 1996
- 6954
-
Bulk lifetime and surface recombination velocity measurement method in semiconductor wafersOgita, Yoh‐Ichiro et al. | 1996
- 6961
-
Photoluminescence and electrical properties of Sn‐doped CuGaSe2 single crystalsScho¨n, J. H. / Baumgartner, F. P. / Arushanov, E. / Riazi‐Nejad, H. / Kloc, Ch. / Bucher, E. et al. | 1996
- 6966
-
Comparison of resonance conditions in double-barrier structures and Xtriple-barrier structuresZhao, X.D. et al. | 1996
- 6966
-
Comparison of resonance conditions in double‐barrier structures and triple‐barrier structuresZhao, X. D. / Yamamoto, H. / Chen, Z. M. / Taniguchi, K. et al. | 1996
- 6975
-
Analysis of current fluctuations in silicon pn+ and p+n homojunctionsMarti´n, M. J. / Vela´zquez, J. E. / Pardo, D. et al. | 1996
- 6982
-
Effects of carrier‐storage layer of InAs/GaAs short period superlattice on photocurrent in GaAs/GaAlAs multi‐quantum well structureMatsui, Y. / Kusumi, Y. et al. | 1996
- 6987
-
Quantitative analysis of electron‐beam‐induced current profiles across p–n junctions in GaAs/Al0.4Ga0.6As heterostructuresBonard, Jean‐Marc / Ganie`re, Jean‐Daniel et al. | 1996
- 6995
-
Photovoltaic spectroscopy of exciton structures in Zn1−xCdxSe/ZnSe multiple quantum wellsAnedda, A. / Casu, M. B. / Serpi, A. et al. | 1996
- 7001
-
Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor depositionSmith, M. / Chen, G. D. / Lin, J. Y. / Jiang, H. X. / Khan, M. Asif / Sun, C. J. / Chen, Q. / Yang, J. W. et al. | 1996
- 7001
-
Free excitonic transition in GaN, grown by metal-organic chemical-vapor depositionSmith, M. / Chen, G.D. / Lin, J.Y. / Jiang, H.X. / Asif Khan, M. / Sun, C.J. / Chen, Q. / Yang, J.W. et al. | 1996
- 7005
-
Capacitance‐voltage profiling of quantum well structuresTschirner, B. M. / Morier‐Genoud, F. / Martin, D. / Reinhart, F. K. et al. | 1996
- 7014
-
Excess carrier lifetime and ambipolar diffusion anisotropy in a nipi‐doped In0.2Ga0.8As/GaAs multiple‐quantum‐well structureLin, H. T. / Rich, D. H. / Larsson, A. et al. | 1996
- 7021
-
Characteristics of a quantum waveguide: Effects of finite confinement potential and geometrical deformations and comparison with simple theoretical approachTachibana, Hiroyuki / Totsuji, Hiroo et al. | 1996
- 7029
-
Heterojunctions and devices of colloidal semiconductor films and quantum dotsKo¨nenkamp, R. / Hoyer, P. / Wahi, A. et al. | 1996
- 7036
-
Magnetoresistance oscillation in window‐coupled wire systemsZhu, Ningjia / Lei, Ming / Guo, Hong et al. | 1996
- 7041
-
Acceptor and donor centers introduced by oxygen ionosorption at the a‐Si:H film surfaceAoucher, M. / Mohammed‐Brahim, T. / Fortin, B. et al. | 1996
- 7051
-
Spectroscopic observation of interface states of ultrathin silicon oxideYamashita, Y. / Namba, K. / Nakato, Y. / Nishioka, Y. / Kobayashi, H. et al. | 1996
- 7058
-
Ohmic contacts formation on n‐InPMorais, J. / Fazan, T. A. / Landers, R. / Sato, E. A. S. et al. | 1996
- 7062
-
Improved current transport properties of post annealed Y1Ba2Cu3O7−x thin films using Ag dopingClausen, T. / Skov, J. L. / Jacobsen, C. S. / Bukh, K. R. / Bollinger, M. V. / Tobiasen, B. P. / Sager, M. P. / Chorkendorff, I. / Larsen, J. et al. | 1996
- 7069
-
Bolometric and nonbolometric infrared photoresponses in ultrathin superconducting NbN filmsJohnson, M. W. / Herr, A. M. / Kadin, A. M. et al. | 1996
- 7075
-
Crystallization of sputtered amorphous oxide filmsGu, B. X. / Zhang, S. Y. / Zhang, H. Y. / Zhu, X. B. / Zhai, H. R. et al. | 1996
- 7080
-
Magnetic and structural properties of Ba–ferrite films prepared by sol‐gel processingIshikawa, A. / Tanahashi, K. / Futamoto, M. et al. | 1996
- 7084
-
Theoretical study on the strain dependence of the magnetic anisotropy of X/Co(X=Pt, Cu, Ag, and Au) metallic multilayersKyuno, K. / Ha, J.‐G. / Yamamoto, R. / Asano, S. et al. | 1996
- 7084
-
Theoretical study on the strain dependence of the magnetic anisotropy of)C-Co(XKyuno, S.K. et al. | 1996
- 7090
-
Giant magnetoresistance in Co/Cu multilayers with Co layers of alternating thicknesses: Reduction of magnetoresistive hysteresisHolloway, H. / Kubinski, D. J. et al. | 1996
- 7095
-
The vector magnetic field dependence of the magnetic moment of particulate recording mediaHsu, Shau‐Wei et al. | 1996
- 7099
-
Magnetization processes and optimal performance of magnetostrictive piezoelectric sensorsPrieto, J. L. / Aroca, C. / Sa´nchez, M. C. / Lo´pez, E. / Sa´nchez, P. et al. | 1996
- 7106
-
Electrical and dielectric properties of systems of porous solids and salt‐containing nonpolar liquidsNettelblad, B. et al. | 1996
- 7114
-
Influence of nitrogen profile on electrical characteristics of furnace‐ or rapid thermally nitrided silicon dioxide filmsBouvet, D. / Clivaz, P. A. / Dutoit, M. / Coluzza, C. / Almeida, J. / Margaritondo, G. / Pio, F. et al. | 1996
- 7123
-
A time‐resolved current method for the investigation of charging ability of insulators under electron beam irradiationSong, Z. G. / Ong, C. K. / Gong, H. et al. | 1996
- 7129
-
Electromagnetic properties of Mn–Zn ferrite sintered ceramicsNakamura, T. / Okano, Y. et al. | 1996
- 7134
-
M3,2‐edge x‐ray absorption near‐edge structure spectroscopy: An alternative probe to the L3,2‐edge near‐edge structure for the unoccupied densities of d states of 5d metalsSham, T. K. / Naftel, S. J. / Coulthard, I. et al. | 1996
- 7139
-
Permanent spectral hole‐burning in semiconductor quantum dotsGaponenko, S. V. / Germanenko, I. N. / Kapitonov, A. M. / Artemyev, M. V. et al. | 1996
- 7143
-
Influence of water and alcohols on photoluminescence of porous siliconBalagurov, L. A. / Leiferov, B. M. / Petrova, E. A. / Orlov, A. F. / Panasenko, E. M. et al. | 1996
- 7148
-
Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experimentDe Wolf, Ingrid / Maes, H. E. / Jones, Stephen K. et al. | 1996
- 7157
-
Infrared absorption of Ge epitaxial films on a GaAs substrateDubey, M. / Jones, K. A. / Han, W. Y. / West, L. C. / Roberts, C. W. / Dunkel, J. P. / Peticolas, L. / Bean, J. C. et al. | 1996
- 7161
-
Wannier–Stark localization in a strained‐layer InxGa1−xAs/InyGa1−yP superlatticeKim, J. W. / Lee, Y. J. / Vogt, T. J. / Patrizi, G. A. / Robinson, G. Y. / Lile, D. L. et al. | 1996
- 7164
-
Resonant exciton effects in InAs monolayer insertions in a GaAs matrixWang, P. D. / Ledentsov, N. N. / Torres, C. M. Sotomayor / Zhukov, A. E. / Kop’ev, P. S. / Ustinov, V. M. et al. | 1996
- 7169
-
Trapping mechanism to account for persistent photoeffects in heavily doped GaAs/AlGaAs multiple quantum wellsGannon, Andrew / Donnelly, David / Covington, Billy et al. | 1996
- 7173
-
Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on SiLiang, Jiachang / Jiang, Junhua / Zhao, Jialong / Gao, Ying et al. | 1996
- 7177
-
Photoluminescence of GaInP under high pressureDong, Jianrong / Li, Guohua / Wang, Zhanguo / Lu, Dacheng / Liu, Xianglin / Li, Xiaobing / Sun, Dianzhao / Kong, Meiying / Wang, Zhijie et al. | 1996
- 7183
-
Study of Franz-Keldysh oscillations in the photo reflectance spectrum the -doped GaAs filmWang, D. P. / Chen, C. T. / Hsu, T. M. et al. | 1996
- 7183
-
A study of Franz–Keldysh oscillations in the photo reflectance spectrum of the δ‐doped GaAs filmWang, D. P. / Chen, C. T. / Hsu, T. M. et al. | 1996
- 7183
-
A study of Franz-Keldysh oscillations in the photo reflectance spectrum of the d-doped GaAs filmWang, D.P. et al. | 1996
- 7186
-
Cathodoluminescence and photoluminescence in the core region of Bi12GeO20 and Bi12SiO20 crystalsCremades, A. / Santos, M. T. / Remo´n, A. / Garci´a, J. A. / Die´guez, E. / Piqueras, J. et al. | 1996
- 7191
-
Manganese‐activated luminescence in ZnGa2O4Yu, Chang Feng / Lin, Pang et al. | 1996
- 7198
-
Control of structures of deposited polymer films by ablation laser wavelength: Polyacrylonitrile at 308, 248, and 193 nmNishio, Satoru / Chiba, Tomonori / Matsuzaki, Akiyoshi / Sato, Hiroyasu et al. | 1996
- 7205
-
Gas dynamics and radiation heat transfer in the vapor plume produced by pulsed laser irradiation of aluminumHo, J. R. / Grigoropoulos, C. P. / Humphrey, J. A. C. et al. | 1996
- 7216
-
Polar distribution of ablated atomic material during the pulsed laser deposition of Cu in vacuum: Dependence on focused laser spot size and power densityWeaver, I. / Lewis, C. L. S. et al. | 1996
- 7223
-
Trapping of radiation in a laser ablated YBa2Cu3O7 plumeRiley, D. / Doyle, L. / Al‐Wazzan, R. et al. | 1996
- 7227
-
Characterization of a‐C:H:N deposition from CH4/N2 rf plasmas using optical emission spectroscopyClay, K. J. / Speakman, S. P. / Amaratunga, G. A. J. / Silva, S. R. P. et al. | 1996
- 7227
-
Characterization of a-C:H:N deposition from CH~4/N~2 rf plasma using optical emission spectroscopyClay, K. J. / Speakman, S. P. / Amaratunga, G. A. J. / Silva, S. R. P. et al. | 1996
- 7234
-
Properties of carbon ion deposited tetrahedral amorphous carbon films as a function of ion energyXu, Shi / Tay, B. K. / Tan, H. S. / Zhong, Li / Tu, Y. Q. / Silva, S. R. P. / Milne, W. I. et al. | 1996
- 7241
-
Morphological evolution of diamonds in combustion synthesisZhang, Bi / Chen, Sihua et al. | 1996
- 7248
-
Carbon growth in diamond deposition on nickel studied in situ by soft x‐ray emission spectroscopyJohansson, E. / Skytt, P. / Carlsson, J.‐O. / Wassdahl, N. / Nordgren, J. et al. | 1996
- 7256
-
Simulation of reactive flow in filament‐assisted diamond growth including hydrogen surface chemistryRuf, B. / Behrendt, F. / Deutschmann, O. / Warnatz, J. et al. | 1996
- 7264
-
Gas‐phase composition measurements during chlorine assisted chemical vapor deposition of diamond: A molecular beam mass spectrometric studyRego, C. A. / Tsang, R. S. / May, P. W. / Ashfold, M. N. R. / Rosser, K. N. et al. | 1996
- 7274
-
High‐rate deposition of a‐Si:H films using a flow plasma–chemical method with electron beam activationSharafutdinov, R. G. / Skrynnikov, A. V. / Parakhnevich, A. V. / Ayupov, B. M. / Badalian, A. M. / Polyakov, O. V. / Baklanov, M. R. / Mogilnikov, K. P. / Biryukov, S. A. et al. | 1996
- 7278
-
Film quality in relation to deposition conditions of a‐SI:H films deposited by the ‘‘hot wire’’ method using highly diluted silaneMolenbroek, Edith C. / Mahan, A. H. / Johnson, E. J. / Gallagher, A. C. et al. | 1996
- 7293
-
One step electrodeposition of CuInSe2: Improved structural, electronic, and photovoltaic properties by annealing under high selenium pressureGuillemoles, Jean‐Franc¸ois / Cowache, Pierre / Lusson, Alain / Fezzaa, Kamel / Boisivon, Frederic / Vedel, Jacques / Lincot, Daniel et al. | 1996
- 7293
-
One step electrodeposition of CuInS2: Improved structural, electronic, and photovoltaic properties by annealing under high selenium pressureGuillemoles, J.F. / Cowache, P. / Lusson, A. / Fezzaa, K. / Boisivon, F. / Vedel, J. / Lincot, D. et al. | 1996
- 7303
-
Thin anodic oxides formed on GaAs in aqueous solutionsSchmuki, P. / Sproule, G. I. / Bardwell, J. A. / Lu, Z. H. / Graham, M. J. et al. | 1996
- 7312
-
Simulation of a three‐dimensional electrorheological suspensionJian, Li / Jiapeng, Shui et al. | 1996
- 7318
-
Physics of high‐intensity nanosecond electron source: Charge limit phenomenon in GaAs photocathodesHerrera‐Go´mez, A. / Vergara, G. / Spicer, W. E. et al. | 1996
- 7324
-
Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gapShafarman, William N. / Klenk, Reiner / McCandless, Brian E. et al. | 1996
- 7329
-
Transient response of photodetectorsDunn, G. M. / Walker, Alison B. / Vickers, A. J. / Wicks, V. R. et al. | 1996
- 7339
-
A computer analysis of the effect of a wide‐band‐gap emitter layer on the performance of a‐Si:H‐based heterojunction solar cellsChatterjee, Parsathi et al. | 1996
- 7348
-
Modeling the post‐burn‐in abnormal base current in AlGaAs/GaAs heterojunction bipolar transistorsSheu, S. / Liou, J. J. / Huang, C. I. / Williamson, D. C. et al. | 1996
- 7353
-
Concurrent thermal and electrical modeling of sub‐micrometer silicon devicesLai, Jie / Majumdar, Arun et al. | 1996
- 7362
-
X‐ray detection by superconducting tunnel junctions via phonon propagation in the substratePoelaert, A. / Erd, C. / Peacock, A. / Rando, N. / Verhoeve, P. / Kozorezov, A. G. / Wigmore, J. K. et al. | 1996
- 7370
-
Junction sharpness in field‐induced transistor structures in CuxAg1−xInSe2McAlpine, N. S. / McConville, P. / Haneman, D. / Chernyak, L. / Cahen, D. et al. | 1996
- 7370
-
Junction shaprness in field-induced transistor structures in Cu(x)Ag(1-x)InSe2McAlpine, N.S. / McConville, P. / Haneman, D. / Chernyak, L. / Cahen, D. et al. | 1996
- 7373
-
Film and interface morphology of CaF2 grown on Si(111) at low temperatureWollschla¨ger, Joachim / Meier, Andreas et al. | 1996
- 7373
-
Film and interface morphology of CaF2 grwon on Si(111) at low temperatureWollschläger, J. / Meier, A. et al. | 1996
- 7376
-
A new algorithm of quantitative texture analysis adapted to thin filmsWang, Y. D. / Liu, Y. D. / Xu, J. Z. / Liang, Z. D. et al. | 1996
- 7379
-
Exchange effect on the space charge in nanostructure resonancesPrice, Peter J. et al. | 1996
- 7381
-
Space‐charge associated with Fano‐type resonances in nanostructuresPrice, Peter J. et al. | 1996
- 7383
-
Surface profile dependence of surface plasmon band gaps on metallic gratingsKitson, S. C. / Barnes, W. L. / Bradberry, G. W. / Sambles, J. R. et al. | 1996
- 7386
-
The nitrogen acceptor energy in ZnTe measured by Hall effect and optical spectroscopyGru¨n, M. / Haury, A. / Cibert, J. / Wasiela, A. et al. | 1996
- 7389
-
Advantage of short over long annealing to activate As implanted in metastable pseudomorphic Ge0.08Si0.92 layers on Si(100)Im, S. / Lie, D. Y. C. / Nicolet, M.‐A. et al. | 1996
- 7392
-
Tunnel barrier properties of oxidized bismuth droplets on Al2O3Ekkens, T. B. / Nolen, S. / Ruggiero, S. T. et al. | 1996
- 7395
-
Giant magnetoresistance in Co/Cu multilayers: Influence of Co thickness at the first antiferromagnetic maximumKubinski, D. J. / Holloway, H. et al. | 1996
- 7398
-
On the origin of magnetoresistance in ferromagnetic perovskite structuresZhang, Shufeng / Yang, Ze et al. | 1996
- 7401
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Ferroelectric electron emission flat panel displayRosenman, G. / Shur, D. / Skliar, A. et al. | 1996
- 7401
-
Ferroelectric electron emission fiat panel displayRosenman, G. / Shur, D. / Skliar, A. et al. | 1996
- 7404
-
Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperatureFeng, W. / Zhang, Z. G. / Yu, Y. / Huang, Q. / Fu, P. M. / Zhou, J. M. et al. | 1996
- 7407
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Comment on ‘‘Atomistic models of vacancy‐mediated diffusion in silicon’’ [J. Appl. Phys. 78, 2362 (1995)]Antoncik, E. et al. | 1996
- 7409
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Reply to ‘‘Comment on ‘Atomistic models of vacancy‐mediated diffusion in silicon’ ’’ [J. Appl. Phys. 78, 2362 (1995)]Dunham, Scott T. et al. | 1996
- 7411
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"Atomic force microscopy imaging of viscoelastic properties in toughened polypropylene resins" [J. Appl. Phys. 78, 5956 (1995)]Nysten, B. / Legras, R. / Costa, J.-L. et al. | 1996
- 7411
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Erratum: ‘‘Atomic force microscopy imaging of viscoelastic properties in toughened polypropylene resins’’ [J. Appl. Phys. 78, 5956 (1995)]Nysten, Bernard / Legras, Roger / Costa, Jean‐Louis et al. | 1996
- 7413
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EUROMAT 97 in the Netherlands| 1996
- 7414
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CUMULATIVE AUTHOR INDEX| 1996