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This paper focuses on the relation between p/i-interface layer and the light stability of the corresponding solar cells. In a series of cells containing different p/i-interface structures large differences in relative degradation were found. These differences are explained by redistribution of the electric field due to the insertion of different p/i-interface layers leading to different collection from the i-layer volume in the course of i-layer degradation. Based on this hypothesis, an optimized design is developed of the p/i-interface region, which increase the initial efficiency without introducing additional degradation. a-Si:H/asi:H stacked cells including this new design exhibit only 12 % degradation after 300 hours of one sun light-soaking. A stabilized efficiency of 9 % was achieved.