2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and Hole-Continuity equations (English)
- New search for: Liang, W.
- New search for: Goldsman, N.
- New search for: Mayergoyz, I.
- New search for: Oldiges, P.J.
- New search for: Liang, W.
- New search for: Goldsman, N.
- New search for: Mayergoyz, I.
- New search for: Oldiges, P.J.
In:
IEEE Transactions on Electron Devices
;
44
, 2
;
257-267
;
1997
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ISSN:
- Article (Journal) / Print
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Title:2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and Hole-Continuity equations
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Additional title:Zweidimensionales MOSFET-Modell mit Oberflächeneffekten und Stoßionisation
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Contributors:Liang, W. ( author ) / Goldsman, N. ( author ) / Mayergoyz, I. ( author ) / Oldiges, P.J. ( author )
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Published in:IEEE Transactions on Electron Devices ; 44, 2 ; 257-267
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Publisher:
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Publication date:1997
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Size:11 Seiten, 8 Bilder, 1 Tabelle, 34 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:MOS-FET , Stoßionisation , Poisson-Gleichung , Boltzmann-Gleichung , Modellsimulation , Elektronenverteilung , Ladungsträgerdichte , Elektron-Loch-Paar , Rekombination , Ladungsträgererzeugung , Submikrometerbereich , Strom-Spannungs-Kennlinie , rechnerunterstützter Schaltungsentwurf , Verteilungsfunktion , Fremdatomzusatz , Substrat , Gate-Oxid , Schichtdicke , elektrisches Potenzial , Energieverteilung , Elektronentemperatur , Monte-Carlo-Methode , Halbleiterphysik
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Source:
Table of contents – Volume 44, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 209
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Room Temperature Unpassivated InAs p-i-n Photodetectors Grown by Molecular Beam EpitaxyLin, R.-M. et al. | 1997
- 214
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Low Dit, Thermodynamically Stable Ga2O3-GaAs Interfaces: Fabrication, Characterization, and ModelingPasslack, M. et al. | 1997
- 226
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3-D Topography Simulator (3-D MULSS) Based on a Physical Description of Material TopographyFujinaga, M. et al. | 1997
- 239
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Heterojunction Blocking Contacts in MOCVD Grown Hg1-xCdx Te Long Wavelength Infrared PhotoconductorsMusca, C.A. et al. | 1997
- 250
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High-Speed and Low-Power Interconnect Technology for Sub-Quarter-Micron ASIC'sMiyamoto, M. et al. | 1997
- 257
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2-D MOSFET Modeling Including Surface Effects and Impact Ionization by Self-Consistent Solution of the Boltzmann, Poisson, and Hole-Continuity EquationsLiang, W. et al. | 1997
- 268
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Comparison of NMOS and PMOS Hot Carrier Effects From 300 to 77 KSong, M. / MacWilliams, K. P. / Woo, J. C. S. et al. | 1997
- 268
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Comparison of NMOS and PMOS Hot Carrier Effects From 300 to 77Song, K.M. et al. | 1997
- 277
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A Physical and Scalable I-V Model in BSIM3v3 for Analog-Digital Circuit SimulationCheng, Y. et al. | 1997
- 288
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Bias and Temperature Dependence of Homogeneous Hot-Electron Injection from Silicon into Silicon Dioxide at Low VoltagesFischer, B. et al. | 1997
- 297
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Electron and Hole Quantization and Their Impact on Deep Submicron Silicon p- and n-MOSFET CharacteristicsJallepalli, S. et al. | 1997
- 297
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Electron and hole quantization and their impact on deep submicron silicon p- and -MOSFET chracteristicsJallepalli, S. / Bude, J. / Shih, W.K. / Pinto, M.R. / Maziar, C.M. / Tasch, A.F. jun. et al. | 1997
- 304
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Self-Consistent Solutions for Allowed Interconnect Current Density -- Part I: Implications for Technology EvolutionHunter, W.R. et al. | 1997
- 310
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Self-Consistent Solutions for Allowed Interconnect Current Density -- Part II: Application to Design GuidelinesHunter, W.R. et al. | 1997
- 317
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Mechanism of Stress-Induced Leakage Current in MOS CapacitorsRosenbaum, E. et al. | 1997
- 324
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A Non-Local Impact Ionization-Lattice Temperature Model for VLSI Double-Gate Ultrathin SOI NMOS DevicesSu, K.W. et al. | 1997
- 331
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Design and Characterization of Submicron BiCMOS Compatible High-Voltage NMOS and PMOS DevicesLi, Y.Q. et al. | 1997
- 339
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Entirely Aluminum Free 905-nm Wavelength Buried Heterostructure Laser by Reactive Ion Etching and Semi-Insulating GaInP: Fe RegrowthLourdudoss, S. et al. | 1997
- 340
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A Study of the Validity of Capacitance-Based Method for Extracting the Effective Channel Length of MOSFET'sLatif, Z. et al. | 1997
- 343
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A Temperature-Dependent MOSFET Inversion Layer Carrier Mobility Model for Device and Circuit SimulationCheng, B. et al. | 1997
- 346
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High-Gain, Low Offset Voltage, and Zero Potential Spike by InGaP-GaAs d-Doped Single Heterojunction Bipolar Transistor (d-SHBT)Lour, W.-S. et al. | 1997
- 346
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High-gain, low offset voltage, and zero potential spike by InGaP/GaAs delta-doped single heterojunction bipolar transistor (delta-SHBT)Lour, W.S. et al. | 1997
- 346
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High-Gain, Low Offset Voltage, and Zero Potential Spike by InGaP/GaAs -Doped Single Heterojunction Bipolar Transistor (-SHBT)Lour, W.-S. et al. | 1997
- 349
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Comments on "Relationship Between Dark Carrier Distribution and Photogenerated Carrier Collection in Solar Cells"Donolato, C. et al. | 1997
- 349
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Comments on "Relationship Between Dark Carrier Distribution and Photogenerated Carrier Collection in Solar Cells" [Correspondence]Donolato, C. et al. | 1997
- 349
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Author's Reply - Comments on "Relationship Between Dark Carrier Distribution and Photogenerated Carrier Collection in Solar Cells"Markvart, T. et al. | 1997
- 349
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Comments on "Relationship between dark carrier distribution and photogenerated carrier collection in solar cells"[with reply]Donolato, C. / Markvart, T. et al. | 1997
- 350
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Correction to "DC and Large-Signal Time-Dependent Electron Transport in Heterostructure Devices: An Investigation of the Heterostructure Barrier Varactor"Jones, J.R. / Tait, G.B. / Jones, S.H. / Katzer, D.S. et al. | 1997
- 351
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Call for Papers -- IEEE TRANSACTIONS ON ELECTRON DEVICES Special Issue on SOI Integrated Circuits and Devices| 1997
- 352
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1997 International Conference on Microelectronic Test Structures| 1997