Time varying phenomena in the photoelectric properties of porous silicon (English)
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In:
Journal of Applied Physics
;
81
, 10
;
6978-6985
;
1997
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ISSN:
- Article (Journal) / Print
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Title:Time varying phenomena in the photoelectric properties of porous silicon
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Additional title:Zeitvariante Phänomene der photoelektrischen Eigenschaften von porösem Silicium
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Contributors:Frello, T. ( author ) / Veje, E. ( author )
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Published in:Journal of Applied Physics ; 81, 10 ; 6978-6985
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Publisher:
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Publication date:1997
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Size:8 Seiten, 10 Bilder, 25 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 81, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 6513
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Ion beams in silicon processing and characterizationChason, E. / Picraux, S. T. / Poate, J. M. / Borland, J. O. / Current, M. I. / Diaz de la Rubia, T. / Eaglesham, D. J. / Holland, O. W. / Law, M. E. / Magee, C. W. et al. | 1997
- 6562
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Role of attractive forces in tapping tip force microscopyKu¨hle, Anders / So&slash;rensen, Alexis H. / Bohr, Jakob et al. | 1997
- 6570
-
Rippled beam free-electron laser amplifier using the axial free-electron laser interactionCarlsten, Bruce E. et al. | 1997
- 6579
-
Electric field and equivalent circuit in all-film capacitorsJoubert, Ch. / Be´roual, A. / Rojat, G. et al. | 1997
- 6585
-
Site-selective excitation and polarized absorption and emission spectra of trivalent thulium and erbium in strontium fluorapatiteGruber, John B. / Wright, Andrew O. / Seltzer, Michael D. / Zandi, Bahram / Merkle, Larry D. / Hutchinson, J. Andrew / Morrison, Clyde A. / Allik, Toomas H. / Chai, Bruce H. T. et al. | 1997
- 6599
-
Spectroscopic characterization of laser-induced plasma created during welding with a pulsed Nd:YAG laserLacroix, D. / Jeandel, G. / Boudot, C. et al. | 1997
- 6607
-
Laser-chemical vapor deposition of W Schottky contacts on GaAs using WF6 and SiH4Tabbal, Malek / Meunier, Michel / Izquierdo, Ricardo / Beau, Be´ne´dicte / Yelon, Arthur et al. | 1997
- 6607
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Laser-channel vapor deposition of W Schottky contacts on GaAs using WF6 and SiH4Tabbal, M. / Meunier, M. / Izquierdo, R. / Beau, B. / Yelon, A. et al. | 1997
- 6612
-
Electro-optic phase modulation by polymer dispersed liquid crystalsVicari, L. et al. | 1997
- 6616
-
Line-focus acoustic microscopy measurements of acoustic properties of LiTaO3 crystal plates with an inversion layerTourlog, Ailie / Achenbach, Jan D. / Kushibiki, J. et al. | 1997
- 6622
-
Observation of ion waves in two-dimensional particle simulation of field-assisted plasma expansionPatel, Kartik et al. | 1997
- 6635
-
Phosphorus and boron implantation in 6H–SiCRao, Mulpuri V. / Gardner, Jason A. / Chi, P. H. / Holland, O. W. / Kelner, G. / Kretchmer, J. / Ghezzo, M. et al. | 1997
- 6642
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Alpha-elastic recoil detection analysis of the energy distribution of oxygen ions implanted into silicon with plasma immersion ion implantationBarradas, N. P. / Maas, A. J. H. / Ma¨ndl, S. / Gu¨nzel, R. et al. | 1997
- 6651
-
Neutron irradiation defects in gallium sulfide: Optical absorption measurementsManjo´n, F. J. / Segura, A. / Mun˜oz, V. et al. | 1997
- 6657
-
X-ray absorption fine structure of samarium-doped borate glassesShimizugawa, Yutaka / Sawaguchi, Naoya / Kawamura, Katsuyuki / Hirao, Kazuyuki et al. | 1997
- 6662
-
Use of time-resolved Raman scattering to determine temperatures in shocked carbon tetrachloridePangilinan, G. I. / Gupta, Y. M. et al. | 1997
- 6670
-
On the origin of failure waves in glassBourne, Neil / Millett, Jeremy / Rosenberg, Zvi et al. | 1997
- 6675
-
Thermal properties of molybdenum below 1 K with application to ultracryogenic resonant-mass gravitational wave detectorsDuffy, W. / Dalal, S. / Quiazon, M. et al. | 1997
- 6680
-
Acetone transport in poly(ethylene terephthalate)Ouyang, Hao / Chen, Che-Chen et al. | 1997
- 6684
-
Room-temperature detection of mobile impurities in compound semiconductors by transient ion driftLyubomirsky, Igor / Rabinal, M. K. / Cahen, David et al. | 1997
- 6692
-
Effective thermal conductivity of particulate composites with interfacial thermal resistanceNan, Ce-Wen / Birringer, R. / Clarke, David R. / Gleiter, H. et al. | 1997
- 6700
-
A simple method for calculating strain distributions in quantum dot structuresDownes, J. R. / Faux, D. A. / O’Reilly, E. P. et al. | 1997
- 6703
-
Stress in dc sputtered TiN/B–C–N multilayersFayeulle, S. / Nastasi, M. et al. | 1997
- 6709
-
Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1−xGex/Si nanostructuresVescan, L. / Dieker, C. / Souifi, A. / Stoica, T. et al. | 1997
- 6716
-
Epitaxial and island growth of Ag/Si(001) by rf magnetron sputteringJe, J. H. / Kang, T. S. / Noh, D. Y. et al. | 1997
- 6723
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Grain growth in anisotropic bicrystal filmsKris, R. / Vilenkin, A. J. / Brokman, A. et al. | 1997
- 6729
-
Nitrogen-doping effects on electrical, optical, and structural properties in hydrogenated amorphous siliconMasuda, Atsushi / Itoh, Ken-ichi / Matsuda, Kazuko / Yonezawa, Yasuto / Kumeda, Minoru / Shimizu, Tatsuo et al. | 1997
- 6738
-
Cl2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopyLayadi, N. / Donnelly, V. M. / Lee, J. T. C. et al. | 1997
- 6749
-
A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopyPleschinger, A. / Lutz, J. / Kuchar, F. / Noll, H. / Pippan, M. et al. | 1997
- 6754
-
Effect of ion bombardment on in-plane texture, surface morphology, and microstructure of vapor deposited Nb thin filmsJi, Hong / Was, Gary S. / Jones, J. Wayne / Moody, Neville R. et al. | 1997
- 6762
-
Electronic defect and trap-related current of (Ba0.4Sr0.6)TiO3 thin filmsWang, Yin-Pin / Tseng, Tseung-Yuen et al. | 1997
- 6767
-
Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germaniumBlondeel, A. / Clauws, P. / Vyncke, D. et al. | 1997
- 6767
-
Optical deep level transient spectroscopy of minority carrier taps in n-type high-purity germaniumBlondeel, A. / Clauws, P. / Vyncke, D. et al. | 1997
- 6773
-
Si1−x−yGexCy alloy band structures by linear combination of atomic orbitalsOrner, B. A. / Kolodzey, J. et al. | 1997
- 6781
-
Reduced threshold current density due to excitonic optical gain in the presence of dislocations and surface states in tensile strained ZnCdSe quantum wire lasersHuang, W. / Jain, F. et al. | 1997
- 6786
-
Fast current limitation by conducting polymer compositesStru¨mpler, R. / Maidorn, G. / Rhyner, J. et al. | 1997
- 6795
-
Influence of an inhomogeneous spatial distribution of defects on the constant photocurrent methodZhang, Qing / Adriaenssens, Guy J. et al. | 1997
- 6800
-
Semiclassical electrical current expressions for materials with position-dependent band structure in the near equilibrium approximationMarshak, Alan H. / Van Vliet, Carolyne M. et al. | 1997
- 6804
-
Conductivity-type anisotropy in molecular solidsOstrick, J. R. / Dodabalapur, A. / Torsi, L. / Lovinger, A. J. / Kwock, E. W. / Miller, T. M. / Galvin, M. / Berggren, M. / Katz, H. E. et al. | 1997
- 6809
-
Interfacial reactions in oligo(arylene-vinylene)–metal systemsNguyen, T. P. / de Vos, S. / Tran, V. H. et al. | 1997
- 6815
-
Carrier transport mechanism of Ohmic contact to p-type diamondYokoba, M. / Koide, Yasuo / Otsuki, A. / Ako, F. / Oku, T. / Murakami, Masanori et al. | 1997
- 6822
-
A model of hole trapping in SiO2 films on siliconLenahan, P. M. / Conley, J. F. / Wallace, B. D. et al. | 1997
- 6825
-
Modeling of three-peak current–voltage characteristics with two resonant tunneling diodes connected in seriesGan, Kwang-Jow / Su, Yan-Kuin / Wang, Ruey-Lue et al. | 1997
- 6830
-
Fabrication and characterization of Ba1−xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctionsSuzuki, Seiji / Yamamoto, Tetsuya / Suzuki, Hiroshi / Kawaguchi, Kenichi / Takahashi, Kazuhiko / Yoshisato, Yorinobu et al. | 1997
- 6837
-
Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wiresRich, D. H. / Tang, Y. / Lin, H. T. et al. | 1997
- 6853
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Hot hole energy relaxation in Si/Si0.8Ge0.2 two dimensional hole gasesBraithwaite, G. / Mattey, N. L. / Parker, E. H. C. / Whall, T. E. / Brunthaler, G. / Bauer, G. et al. | 1997
- 6857
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A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layersGa´miz, F. / Rolda´n, J. B. / Lo´pez-Villanueva, J. A. et al. | 1997
- 6866
-
Hall effect in semiconducting epitaxial and amorphous Y-Ba-Cu-O thin filmsShan, Pao-Chuan / Jahanzeb, Agha / Butler, Donald P. / C¸elik-Butler, Zeynep / Kula, Witold / Sobolewski, Roman et al. | 1997
- 6874
-
Magnetic properties and Kerr rotation of amorphous FeCoTbNd filmsKim, Jai-Young / Hoffmann, Horst et al. | 1997
- 6879
-
A new technique for measuring magnetic anisotropies in thin and ultrathin films by magneto-opticsCowburn, R. P. / Ercole, A. / Gray, S. J. / Bland, J. A. C. et al. | 1997
- 6884
-
Stress-induced magnetic anisotropy in thick oriented NiZn–ferrite films on (100) MgO substratesDorsey, P. C. / Rappoli, B. J. / Grabowski, K. S. / Lubitz, P. / Chrisey, D. B. / Horwitz, J. S. et al. | 1997
- 6892
-
Size quantization and interfacial effects on a novel gamma-Fe~2O~3/SiO~2 magnetic nanocomposite via sol-gel matrix-mediated synthesisZhang, L. / Papaefthymiou, G. C. / Ying, J. Y. et al. | 1997
- 6892
-
Size quantization and interfacial effects on a novel γ-Fe2O3/SiO2 magnetic nanocomposite via sol-gel matrix-mediated synthesisZhang, Lei / Papaefthymiou, George C. / Ying, Jackie Y. et al. | 1997
- 6901
-
Sonochemical preparation of nanosized amorphous Fe-Ni alloysShafi, K. V. P. M. / Gedanken, A. / Goldfarb, R. B. / Felner, I. et al. | 1997
- 6906
-
Elastic properties of single- and multi-domain crystals of LiTaO3Kushibiki, Jun-ichi / Takanaga, Izumi et al. | 1997
- 6911
-
Leakage currents in amorphous Ta2O5 thin filmsChiu, Fu-Chien / Wang, Jenn-Jyh / Lee, Joseph Ya-min / Wu, Shich Chuan et al. | 1997
- 6911
-
Leakage current in amorphous Ta2O5 thin filmsChiu, Fu-Chien / Wang, Jenn-Jyh / Lee, J. Ya-Min / Shich Chuan Wu et al. | 1997
- 6916
-
Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyRoura, P. / Lo´pez-de Miguel, M. / Cornet, A. / Morante, J. R. et al. | 1997
- 6921
-
The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devicesYeh, Yung-Hui / Lee, Joseph Ya-min et al. | 1997
- 6928
-
Femtosecond degenerate four-wave mixing in 500 μm undoped GaAs and 350 μm undoped InP far below band gapYu, Sungkyu / Kim, Dongho / Kim, D. S. / Lee, Y. H. / Cho, Y. H. / Choe, B. D. / Lee, Jong Hyun et al. | 1997
- 6928
-
Femtosecond degenerate four-wave mixing in 500 micron undoped GaAs and 350 micron undoped InP far below band gapYu, Sungkyu / Kim, Dongho / Kim, D.S. / Lee, Y.H. / Cho, Y.H. / Choe, B.D. / Lee, Jong-Hyun et al. | 1997
- 6934
-
Novel fluorine-phosphate semiconductor doped glasses: Linear and nonlinear optical propertiesVaynberg, B. / Matusovsky, M. / Rosenbluh, M. / Petrikov, V. / Lipovskii, A. et al. | 1997
- 6939
-
Spectroscopic properties of anisotropic absorption in a neodymium-doped YAlO3 laser crystalZhang, Xinghong / Jiang, Bingxi / Yang, Yufen / Wang, Zhanguo et al. | 1997
- 6943
-
Infrared absorption spectra of manganese oxides La1−x−yRyCaxMnO3−δKebin, Li / Xijun, Li / Kaigui, Zhu / Jingsheng, Zhu / Yuheng, Zhang et al. | 1997
- 6943
-
Infrared absorption spectra of manganese oxides La(1-x-y)R(y)Ca(x)MnO(3-delta)Li, Kebin / Li, Xijun / Zhu, Kaigui / Zhu, Jingsheng / Zhang, Yuheng et al. | 1997
- 6948
-
Optical properties of α-irradiated and annealed Si-doped GaAsKunert, H. W. / Brink, D. J. et al. | 1997
- 6948
-
Optical properties of alpha-irradiated and annealed Si-doped GaAsKunert, H.W. / Brink, D.J. et al. | 1997
- 6954
-
Charge carrier recombination in organic bilayer electroluminescent diodes. I. TheoryKhramtchenkov, D. V. / Arkhipov, V. I. / Ba¨ssler, H. et al. | 1997
- 6963
-
Charge carrier recombination in organic bilayer electroluminescent diodes. II. ExperimentTak, Y.-H. / Ba¨ssler, H. et al. | 1997
- 6968
-
Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films grown on Si substrateGhosh, S. / Arora, B. M. et al. | 1997
- 6975
-
Electroluminescence in thin solid films of closely packed CdS nanocrystalsArtemyev, M. V. / Sperling, V. / Woggon, U. et al. | 1997
- 6978
-
Time-varying phenomena in the photoelectric properties of porous siliconFrello, T. / Veje, E. et al. | 1997
- 6986
-
Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopyHan, I. K. / Kim, E. K. / Lee, J. I. / Kim, S. H. / Kang, K. N. / Kim, Y. / Lim, H. / Park, H. L. et al. | 1997
- 6992
-
Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitridesLu, H. C. / Gusev, E. P. / Gustafsson, T. / Garfunkel, E. et al. | 1997
- 6996
-
Oxidation of crystalline Si in an O2 plasma: Growth kinetics and oxide characterizationMartinet, C. / Devine, R. A. B. / Brunel, M. et al. | 1997
- 7006
-
Effect of chemical oxide layers on platinum-enhanced oxidation of siliconNamba, K. / Yuasa, T. / Nakato, Y. / Yoneda, K. / Kato, H. / Kobayashi, H. et al. | 1997
- 7012
-
(001) GaAs substrate preparation for direct ZnSe heteroepitaxyBousquet, V. / Ongaretto, C. / Lau¨gt, M. / Behringer, M. / Tournie´, E. / Faurie, J.-P. et al. | 1997
- 7018
-
On the origin of periodic inclusions in metals frozen onto a moving substrateBiriukov, A. S. / Bogatyrjov, V. A. / Khitun, A. G. et al. | 1997
- 7018
-
On the origin of periodic inclusions in metal frozen onto a moving substrateBiriukov, A.S. / Bogatyrjov, V.A. / Khitun, A.G. et al. | 1997
- 7024
-
Photoelectrochemical conversion in a WO3 coated p-Si photoelectrode: Effect of annealing temperatureYoon, Ki Hyun / Shin, Choul Woo / Kang, Dong Heon et al. | 1997
- 7030
-
Effect of water absorption of dielectric underlayers on crystal orientation in Al–Si–Cu/Ti/TiN/Ti metallizationYoshida, Tomoyuki / Hashimoto, Shoji / Hosokawa, Hideki / Ohwaki, Takeshi / Mitsushima, Yasuichi / Taga, Yasunori et al. | 1997
- 7039
-
Suspended epitaxial YBaCuO microbolometers fabricated by silicon micromachining: Modeling and measurementsMe´chin, Laurence / Ville´gier, Jean-Claude / Bloyet, Daniel et al. | 1997
- 7048
-
Characteristics of InxGa1−xAs/GaAs pseudomorphic modulation doped field effect transistorKuan, H. / Su, Y. K. / Wu, T. S. et al. | 1997
- 7053
-
Field-effect trap-level-distribution model of dynamic random access memory data retention characteristicsHiraiwa, A. / Ogasawara, M. / Natsuaki, N. / Itoh, Y. / Iwai, H. et al. | 1997
- 7061
-
X-ray diffraction study of solid-state formation of metastable MoSi2 and TiSi2 during mechanical alloyingYen, Bing K. et al. | 1997
- 7064
-
Heterogeneous free-surface profile of B4C polycrystal under shock compressionMashimo, Tsutomu / Uchino, Masakazu et al. | 1997
- 7067
-
Compensation effect in the rate of solid-phase epitaxial growth of Si1−xGex alloysSuh, K. Y. / Lee, Hong H. et al. | 1997
- 7070
-
Enhancement of resonant tunneling current at room temperatureKim, Gyungock / Roh, Dong-Wan / Paek, Seung Won et al. | 1997
- 7073
-
Sub-picosecond resonant third-order nonlinear optical response of azobenzene-doped polymer filmDong, F. / Koudoumas, E. / Couris, S. / Shen, Yuquan / Qiu, Ling / Fu, Xingfa et al. | 1997
- 7076
-
Comment on “Quantum-well infrared detectors” [J. Appl. Phys. 74, R18 (1993)]Nathan, Vaidya et al. | 1997
- 7077
-
Erratum: “Measurements of frequency upconversion and picosecond excitation-correlation luminescence spectra in GaAs quantum wells and determination of time constants describing exciton dynamics” [J. Appl. Phys. 80, 5921 (1996)]Kumar, Rajesh / Vengurlekar, A. S. / Prabhu, S. S. / Shah, Jagdeep / Pfeiffer, L. N. et al. | 1997
- 7078
-
Erratum: “Investigation of the effect of hydrogen on electrical and optical properties in chemical-vapor-deposited homoepitaxial diamond films” [J. Appl. Phys. 81, 744 (1997)]Hayashi, Kazushi / Yamanaka, Sadanori / Watanabe, Hideyuki / Sekiguchi, Takashi / Okushi, Hideyo / Kajimura, Koji et al. | 1997