A comparison of ion beam induced atomic mixing kinetics of Ti/Si, Fe/Si, and Ni/Si systems (English)
- New search for: Al-Saleh, K.A.
- New search for: Jabr, I.J.
- New search for: Saleh, N.S.
- New search for: Al-Saleh, K.A.
- New search for: Jabr, I.J.
- New search for: Saleh, N.S.
In:
Physica Status Solidi (A) - Applied Research
;
118
, 2
;
467-472
;
1990
- Article (Journal) / Print
-
Title:A comparison of ion beam induced atomic mixing kinetics of Ti/Si, Fe/Si, and Ni/Si systems
-
Additional title:Ein Vergleich der ionenstrahlinduzierten atomaren Mischkinetik in den Systemen Ti/Si, Fe/Si und Ni/Si
-
Contributors:
-
Published in:Physica Status Solidi (A) - Applied Research ; 118, 2 ; 467-472
-
Publisher:
-
Publication date:1990
-
Size:6 Seiten, 20 Quellen
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
-
Keywords:ELEMENTHALBLEITER , HALBLEITERWERKSTOFF , RAUMTEMPERATUR , IONENBESCHUSS , ELEKTRISCHE LEITFAEHIGKEIT , METALL-HALBLEITER-KONTAKT , KRYPTON , ATOM , DIFFUSIONSTECHNIK , EISEN , RUTHERFORD-RUECKSTREUUNG , SILICIUM , TITAN , NICKEL , IONENSTRAHLMISCHEN , HALBLEITER-METALL-GRENZFLAECHE , RUTHERFORD-RUECKSTREUSPEKTROMETRIE , MIXING EFFICIENCY
-
Source: