36th National Symposium of the American Vacuum Society, 23-27 Oct. 1989, Boston, MA, USA (English)
In:
Journal of Vacuum Science and Technology, Part A (Vacuums, Surfaces, and Films)
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8
, 3, PT.1
;
1990
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ISSN:
- Article (Journal) / Print
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Title:36th National Symposium of the American Vacuum Society, 23-27 Oct. 1989, Boston, MA, USA
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Additional title:36. Nationales Symposium der American Vacuum Society, 23.-27. Oktober 1989, Boston, MA, USA
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Published in:
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Publisher:
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Publication date:1990
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:PHYSIKALISCHE EIGENSCHAFT , MODELLIEREN (GESTALTEN) , TAGUNG , TAGUNGSBERICHT , USA (UNITED STATES OF AMERICA) , ELEKTRISCHE ENTLADUNG , FUSIONSREAKTOR , OBERFLAECHENGUETE , NIEDERDRUCKGASPHASENABSCHEIDUNG , VAKUUMANLAGE , SCHICHTWACHSTUM , HALBLEITERWERKSTOFF , TARGET , METALLURGIE , PLASMADIAGNOSTIK , DUENNE SCHICHT , VAKUUMTECHNIK , AUFDAMPFEN , ZERSTAEUBUNG , ABSCHEIDUNG (BESCHICHTEN) , MIKROELEKTRONIK , VAKUUMMETALLURGIE , VAKUUMBESCHICHTEN , ELEKTRONISCHER WERKSTOFF , DIAGNOSTIKA
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Source:
Table of contents – Volume 8, Issue 3, PT.1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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36th National Symposium of the American Vacuum Society, 23-27 Oct. 1989, Boston, MA, USA| 1990
- 1294
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A comparison of SiO2 planarization layers by hollow cathode enhanced direct current reactive magnetron sputtering and radio frequency magnetron sputteringDawson-Elli, D.F. / Lefkow, A.R. / Nordman, J.E. et al. | 1990
- 1299
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Film thickness distribution control with off-axis circular magnetron sources onto rotating substrate holders: comparison of computer simulation with practical resultsSwann, S. / Collett, S.A. / Scarlett, I.R. et al. | 1990
- 1325
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Beam parameter effects on magnetic properties of sputtered amorphous Fe40Ni40B15Si5 and Fe40Co40B15Si5 filmsHarris, V.G. / Oliver, S.A. / Nowak, W.B. / Vittoria, C. et al. | 1990
- 1369
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Electronic stability of the reactively sputtered hydrogenated amorphous silicon thin films: the effect of hydrogen contentPinarbasi, M. / Kushner, M.J. / Abelson, J.R. et al. | 1990
- 1399
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Low resistivity indium-tin oxide transparent conductive films. I. Effect of introducing H2O gas or H2 gas during direct current magnetron sputteringIshibashi, S. / Higuchi, Y. / Ota, Y. / Nakamura, K. et al. | 1990
- 1403
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Low resistivity indium-tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of filmsIshibashi, S. / Higuchi, Y. / Ota, Y. / Nakamura, K. et al. | 1990
- 1411
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Area selective metalorganic chemical vapor deposition of gold on tungsten patterned on siliconColgate, S.O. / Palenik, G.J. / House, V.E. / Schoenfeld, D.W. et al. | 1990
- 1413
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Thermodynamic modeling of selective chemical vapor deposition processes in microelectronic siliconMadar, R. / Bernard, C. et al. | 1990
- 1474
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The effects of alloying on stress induced void formation in aluminum-based metallizationsRyan, J.G. / Riendeau, J.B. / Shore, S.E. / Slusser, G.J. / Beyar, D.C. / Bouldin, D.P. / Sullivan, T.D. et al. | 1990
- 1480
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Aluminum-samarium alloy for interconnections in integrated circuitsJoshi, A. / Gardner, D. / Hu, H.S. / Mardinly, A.J. / Nieh, T.G. et al. | 1990
- 1484
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Submicron two-layer metal system of selective tungsten and TiW cap metallizationMattox, R.J. / Wilson, S.R. / Sellers, J.A. et al. | 1990
- 1498
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Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnectionsHu, C.K. / Mazzeo, N. / Basavaiah, S. / Small, M.B. / Choi, K.W. et al. | 1990
- 1503
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Hydrogen plasmas for flux free flip-chip solder bondingPickering, K. / Southworth, P. / Wort, C. / Parsons, A. / Pedder, D.J. et al. | 1990
- 1509
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Electrical conductivity of as-prepared and annealed amorphous hydrogenated carbon filmsReyes-Mena, A. / Gonzalez-Hernandez, J. / Asomoza, R. / Chao, B.S. et al. | 1990
- 1514
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Impurity effects in partially ionized beam metal via fillingGittleman, B. / Bai, P. / Yang, G.R. / Lu, T.M. / Hu, C.K. et al. | 1990
- 1529
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Slope control of molybdenum lines etched with reactive ion etchingYue Kuo / Crowe, J.R. et al. | 1990
- 1577
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Structural characterization of alpha -Sn and alpha -Sn1-xGex alloys grown by molecular beam epitaxy on CdTe and InSbBowman, R.C. jun. / Adams, P.M. / Englehardt, M.A. / Hochst, H. et al. | 1990
- 1587
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Ion-irradiation-induced suppression of three-dimensional island formation during InAs growth on Si(100)Choi, C.H. / Hultman, L. / Barnett, S.A. et al. | 1990
- 1603
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Physical vapor deposition equipment evaluation and characterization using statistical methodsDharmadhikari, V.S. / Lynch, R.O. / Brennan, W. / Cronin, W. / Rastogi, R. et al. | 1990
- 1618
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Continuous-wave laser doping of micrometer-sized features in gallium arsenide using a dimethylzinc ambientLicata, T.J. / Podlesnik, D.V. / Tang, H. / Herman, I.P. / Osgood, R.M. jun. / Schwarz, S.A. et al. | 1990
- 1648
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The importance of free radical recombination reactions in CF4/O4 plasma etching of siliconDalvie, M. / Jensen, K.F. et al. | 1990
- 1654
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Scaling laws for radio frequency glow discharges for dry etchingParanjpe, A.P. / McVittie, J.P. / Self, S.A. et al. | 1990
- 1677
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Plasma-material interactionsHess, D.W. et al. | 1990
- 1690
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Methyl radical etching of compound semiconductors with a secondary afterglow reactorSpencer, J.E. / Schimert, T.R. / Dinan, J.H. / Endres, D. / Hayes, T.R. et al. | 1990
- 1696
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Reactive ion etching of silicon using bromine containing plasmasBestwick, T.D. / Oehrlein, G.S. et al. | 1990
- 1702
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Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: feeding gas effectsYue Kuo et al. | 1990
- 1706
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The effects of polymer film formation on photoresist (OFPR-800) during plasma etching in C2F6/CHF3/HeThomas, J.H. III / White, L.K. / Miszkowski, N. et al. | 1990
- 1712
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Plasma power dissipation at wafer surfaces measured using pulsed photoluminescence spectroscopyMitchell, A. / Gottscho, R.A. et al. | 1990
- 1835
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High rate radio frequency sputtering using in-phase plasma confinementLogan, J.S. / Costable, J. / Jones, F. / Lucy, J.E. et al. | 1990
- 1840
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Broad beam extraction from a new sputtering-type ion source using an electric mirrorMatsuoka, M. / Ono, K. et al. | 1990
- 1844
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Digital chemical vapor deposition and etching technologies for semiconductor processingHoriike, Y. / Tanaka, T. / Nakano, M. / Iseda, S. / Sakaue, H. / Nagata, A. / Shindo, H. / Miyazaki, S. / Hirose, M. et al. | 1990
- 1851
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Modulated discharges: effect on plasma parameters and depositionVerdeyen, J.T. / Beberman, J. / Overzet, L. et al. | 1990
- 1857
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Defect microchemistry in SiO2/Si structuresRubloff, G.W. et al. | 1990
- 1871
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Thermal stabilization of device quality films deposited at low temperaturesFitch, J.T. / Kim, S.S. / Lucovsky, G. et al. | 1990
- 1888
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CdZnTe/ZnTe and HgCdTe/CdTe quantum wells grown by molecular beam epitaxyFeldman, R.D. et al. | 1990
- 1912
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Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxideGessert, T.A. / Li, X. / Wanlass, M.W. / Nelson, A.J. / Coutts, T.J. et al. | 1990
- 1917
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Controlled modification of heterojunction band lineups by diffusive intralayersMcKinley, J.T. / Hwu, Y. / Rioux, D. / Terrasi, A. / Zanini, F. / Margaritondo, G. / Debska, U. / Furdyna, J.K. et al. | 1990
- 1926
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Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe(110)Wahi, A.K. / Miyano, K. / Carey, G.P. / Chiang, T.T. / Lindau, I. / Spicer, W.E. et al. | 1990
- 1934
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Photoconductive characterization of ZnxCd1-xTe (0Lopez-Cruz, E. / Gonzalez-Hernandez, J. / Allred, D.D. / Allred, W.P. et al. | 1990
- 1939
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Integrated thermal chemical vapor deposition processing for Si technologyLiehr, M. et al. | 1990
- 1947
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Formation of silicon-based heterostructures in multichamber integrated-processing thin-film deposition systemsLucovsky, G. / Kim, S.S. / Tsu, D.V. / Parsons, G.N. / Fitch, J.T. et al. | 1990
- 1969
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Molecular-beam study of gas-surface chemistry in the ion-assisted etching of silicon with atomic and molecular hydrogen and chlorineMei-Chen Chuang / Coburn, J.W. et al. | 1990
- 1983
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Synchrotron radiation photoemission study of the formation of the Ag/GaSb(110) interfaceMao, D. / Soonckindt, L. / Kahn, A. / Terrasi, A. / Margaritondo, G. et al. | 1990
- 1988
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Overlayer morphology and metallicity: formation of In/GaSb(110) barriers at room and low temperatureLu, Z.M. / Mao, D. / Soonckindt, L. / Kahn, A. et al. | 1990
- 1993
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X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy studies of the effects of Ni layer on AuGe/GaAs(100) interfaceAres Fang, C.S. / Chang, Y.L. / Tse, W.S. et al. | 1990
- 2004
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Minority carrier diffusion length of p-GaAs determined by time of flightKeyes, B.M. / Dunlavy, D.J. / Ahrenkiel, R.K. / Asher, S.E. / Partain, L.D. / Liu, D.D. / Kuryla, M.S. et al. | 1990
- 2012
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Effects of annealing and surface preparation on the properties of polycrystalline CdZnTe films grown by molecular beam epitaxyRingel, S.A. / Sudharsanan, R. / Rohatgi, A. / Owens, M.S. / Gillis, H.P. et al. | 1990
- 2020
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X-ray absorption of As low-energy ion implanted into Si(100) grown by molecular-beam epitaxyTyliszczak, T. / Hitchcock, A.P. / Jackman, T.E. et al. | 1990
- 2025
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Microcorrosion of Al-Cu and Al-Cu-Si alloys: interaction of the metallization with subsequent aqueous photolithographic processingWeston, D. / Wilson, S.R. / Kottke, M. et al. | 1990
- 2033
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Growth structure of excited oxygen on GaAs(111) surfacesAlonso, M. / Soria, F. / Gonzalez, M.L. et al. | 1990
- 2039
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Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma-enhanced chemical vapor depositionKim, S.S. / Stephens, D.J. / Lucovsky, G. / Fountain, G.G. / Markunas, R.J. et al. | 1990
- 2049
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Electrical and structural characterization of Mo/Si contact to n-GaAsKulkarni, A.K. / Patkar, M.P. et al. | 1990
- 2079
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Backside secondary ion mass spectrometry investigation of ohmic and Schottky contacts on GaAsSchwarz, S.A. / Palmstrom, C.J. / Schwartz, C.L. / Sands, T. / Shantharama, L.G. / Harbison, J.P. / Florez, L.T. / Marshall, E.D. / Han, C.C. / Lau, S.S. et al. | 1990
- 2084
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'Pinning' and Fermi level movement at GaAs surfaces and interfacesSpicer, W.E. / Newman, N. / Spindt, C.J. / Liliental-Weber, Z. / Weber, E.R. et al. | 1990
- 2090
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The interface state study of TaSix/GaAs Schottky barrierKao, C.H. / Huang, F.S. / Jiann-Ruey Chen et al. | 1990