The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing (English)
- New search for: Lee, J.L.
- New search for: Wei, L.
- New search for: Tanigawa, S.
- New search for: Nakagawa, T.
- New search for: Ohta, K.
- New search for: Lee, J.Y.
- New search for: Lee, J.L.
- New search for: Wei, L.
- New search for: Tanigawa, S.
- New search for: Nakagawa, T.
- New search for: Ohta, K.
- New search for: Lee, J.Y.
In:
IEEE Transactions on Electron Devices
;
39
, 1
;
176-183
;
1992
-
ISSN:
- Article (Journal) / Print
-
Title:The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing
-
Additional title:Einflüsse von Punktdefekten auf die elektrische Aktivität von Si-implantiertem GaAs
-
Contributors:Lee, J.L. ( author ) / Wei, L. ( author ) / Tanigawa, S. ( author ) / Nakagawa, T. ( author ) / Ohta, K. ( author ) / Lee, J.Y. ( author )
-
Published in:IEEE Transactions on Electron Devices ; 39, 1 ; 176-183
-
Publisher:
-
Publication date:1992
-
Size:8 Seiten, 22 Quellen
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 39, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 4
-
Single-wafer integrated semiconductor device processingMoslehi, M.M. / Chapman, R.A. / Wong, M. / Paranjpe, A. / Najm, H.N. / Kuehne, J. / Yeakley, R.L. / Davis, C.J. et al. | 1992
- 33
-
Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5- mu m Bi-CMOS processNorishima, M. / Iwai, H. / Niitsu, Y. / Maeguchi, K. et al. | 1992
- 41
-
Rapid-thermal annealing for quantum-well heterostructure device fabricationMyers, D.R. / Vawter, G.A. / Jones, E.D. / Zipperian, T.E. / Drummond, T.J. / Fritz, I.J. / Dawson, L.R. / Brennan, T.M. / Hammons, B.E. / Datye, A.K. et al. | 1992
- 50
-
Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealingSadwick, L.P. / Streit, D.C. / Jones, W.L. / Kim, C.W. / Hwu, R.J. et al. | 1992
- 56
-
Rapid isothermal processing of strained GeSi layersNayak, D.K. / Kamjoo, K. / Park, J.S. / Woo, J.C.S. / Wang, K.L. et al. | 1992
- 64
-
Epitaxial growth of beta -SiC on Si by RTCVD with C3H8 and SiH4Steckl, A.J. / Li, J.P. et al. | 1992
- 75
-
Temperature uniformity in RTP furnacesSorrell, F.Y. / Fordham, M.J. / Ozturk, M.C. / Wortman, J.J. et al. | 1992
- 81
-
Silicon temperature measurement by infrared absorption. Fundamental processes and doping effectsSturm, J.C. / Reaves, C.M. et al. | 1992
- 89
-
Wavelength-specific pyrometry as a temperature measurement toolDelfino, M. / Hodul, D.T. et al. | 1992
- 96
-
Defect generation and gettering during rapid thermal processingHartiti, B. / Muller, J.C. / Siffert, P. et al. | 1992
- 105
-
Shallow-junction formation on silicon by rapid thermal diffusion of impurities from a spin-on sourceUsami, A. / Ando, M. / Tsunekane, M. / Wada, T. et al. | 1992
- 111
-
Estimation of effective diffusion time in a rapid thermal diffusion using a solid diffusion sourceCho, B.J. / Park, S.K. / Kim, C.K. et al. | 1992
- 118
-
Deep-submicrometer CMOS technology with reoxidized or annealed nitrided-oxide gate dielectrics prepared by rapid thermal processingHori, T. / Akamatsu, S. / Odake, Y. et al. | 1992
- 127
-
Thin-gate SiO2 films formed by in situ multiple rapid thermal processingFukuda, H. / Arakawa, T. / Ohno, S. et al. | 1992
- 134
-
Hot-carrier effects in MOSFET's with nitrided-oxide gate-dielectrics prepared by rapid thermal processingHori, T. / Yasui, T. / Akamatsu, S. et al. | 1992
- 148
-
Thin fluorinated gate dielectrics grown by rapid thermal processing in O2 with diluted NF3Lo, G.Q. / Ting, W. / Ahn, J.H. / Kwong, D.L. / Kuehne, J. et al. | 1992
- 160
-
Rapid isothermal annealing of high- and low-energy ion-implanted InP and In0.53Ga0.47AsRao, M.V. et al. | 1992
- 166
-
Ion implantation in gallium arsenide MESFET technologySouza, J.P. de / Sadana, D.K. et al. | 1992
- 176
-
The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealingLee, J.L. / Wei, L. / Tanigawa, S. / Nakagawa, T. / Ohta, K. / Lee, J.Y. et al. | 1992
- 193
-
Structural and electrical properties of furnace and rapid thermally annealed LPCVD WSi2 films on single-crystal, polycrystalline, and amorphous silicon substratesShenai, K. et al. | 1992
- 200
-
Characterization of semiconducting iron disilicide obtained by LRP/CVDRegolini, J. / Trincat, F. / Sagnes, I. / Shapira, Y. / Bremond, G. / Bensahel, D. et al. | 1992