Solution growth of CuInSe2 from CuSe solutions (English)
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In:
Journal of Crystal Growth
;
156
, 4
;
404-409
;
1995
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ISSN:
- Article (Journal) / Print
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Title:Solution growth of CuInSe2 from CuSe solutions
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Additional title:Die Züchtung von CuInSe2 aus CuSe-Lösungen
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Contributors:
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Published in:Journal of Crystal Growth ; 156, 4 ; 404-409
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Publisher:
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Publication date:1995
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Size:6 Seiten, 16 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:Ladungsträgerdichte , Ladungsträgerbeweglichkeit , Kupferverbindung , Kristallgitter , elektrische Leitfähigkeit , Zustandsdiagramm , Photolumineszenz , Temperaturgang , Kristallzüchtung , Kristallwachstum , Kristall , intermetallische Verbindung , chemische Lösung , Halbleiterverbindung , Selenid , Indiumverbindung , Halbleiterwachstum , ternärer Halbleiter , chemische Röntgenanalyse , quasi binäres System , Röntgenbeugung , p-Halbleiter
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Source:
Table of contents – Volume 156, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 311
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OMVPE growth of InAsSb using novel precursorsHuang, K.T. et al. | 1995
- 320
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InTlSb growth by OMVPEHuang, K.T. et al. | 1995
- 327
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Reflection high energy electron diffraction intensity modifications induced by antimony flux interruption during GaSb growth by molecular beam epitaxyBertru, N. et al. | 1995
- 333
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A new method for controlled carbon doping in LP-MOVPE of GaAs using TMAs and mixtures of TMGa-TEGaHardtdegen, H. et al. | 1995
- 337
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High quantum efficiency InP mesas grown by hybrid epitaxy on Si substratesSchnabel, R.F. et al. | 1995
- 343
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Te doping with dimethylditelluride during organometallic vapor phase epitaxy of GaAsLi, W.M. et al. | 1995
- 350
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Growth of 20 mm diameter GaAs crystals by the floating-zone technique with controlled As-vapour pressure under microgravityHerrmann, F.M. et al. | 1995
- 361
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Growth of high purity liquid phase epitaxial GaAs in a silica growth systemButcher, K.S.A. et al. | 1995
- 368
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Interfacial layer formation on corrugated InP during the epitaxial growth of GaInAsP-InP distributed feedback laser diode structureJang, Dong Hong et al. | 1995
- 373
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Epitaxial growth of ZnMgTe and double heterostructure of ZnTe-ZnMgTe on GaAs substrate by metalorganic chemical vapor depositionAsano, T. et al. | 1995
- 377
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Study of point defect clusters in high purity single crystals of silicon grown by Czochralski and float-zone methods by diffuse X-ray scattering techniqueRamanan, R.R. et al. | 1995
- 383
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Structure of temperature and velocity fields in the Si melt of a Czochralksi crystal growth systemYi, K.-W. / Booker, V. B. / Eguchi, M. / Shyo, T. / Kakimoto, K. et al. | 1995
- 383
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Structure of temperature and velocity fields in the Si melt of a Czochralski crystal growth systemYi, K.-W. et al. | 1995
- 393
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Change of conductivity in compounds of Sr14Cu24O41 structure by substitution of calcium for strontiumKaigawa, R. et al. | 1995
- 398
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Growth shape of melt-textured Y-Ba-Cu-O crystalKim, Chan-Joong et al. | 1995
- 404
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Solution growth of CuInSe2 from CuSe solutionsMiyake, H. et al. | 1995
- 410
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Growth of lithium triborate single crystals from molten salt solution under various temperature gradientsGuretskii, S.A. et al. | 1995
- 413
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Changes in the solid-liquid interface during the fgrowth of Bi 12)SiO20, Bi12GeO20 and LiNbO3 crystals grown by the Czochralski methodSantos, M.T. et al. | 1995
- 413
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Changes in the solid-liquid interface during the growth of Bi~1~2SiO~2~0, Bi~1~2GeO~2~0 and LiNbO~3 crystals grown by the Czochralski methodSantos, M. T. / Rojo, J. C. / Cintas, A. / Arizmendi, L. / Dieguez, E. et al. | 1995
- 421
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Characterization and thermal and electromagnetic behaviour of gadolinium-doped calcium tartrate crystals grown by the solution techniqueTorres, M.E. et al. | 1995
- 426
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Preparation of YSZ layers by MOCVD: Influence of experimental parameters on the morphology of the filmsGarcia, G. et al. | 1995
- 433
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Relationship between the structure and growth morphology of topaz (Al2SiO4(F, OH)2) using the periodic bond chain methodNorthrup, P.A. et al. | 1995
- 443
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High resolution electron microscopy study of crystal growth mechanisms in chicken bone compositesCuisinier, F.J.G. et al. | 1995
- 454
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Interaction of fluid flow under a rotating crystal with the growing surfaceYu Bunkin, A. et al. | 1995
- 459
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A comparison of binding energy and metastable zone width for adipic acid with various additivesMyerson, A.S. et al. | 1995
- 467
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An approximate method to calculate the solute redistribution in directional solidification specimen with limited lengthWanqi, Jie et al. | 1995
- 473
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Cellular pattern during directional growth of a single crystal in a quasi-two-dimensional systemFedorov, O.P. et al. | 1995
- 480
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Study of the microstructure of a Ni(100) single crystal grown by electron beam floating zone meltingAlonzo, V. et al. | 1995
- 487
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Effects of an axial magnetic field on the growth interfaces in vertical gradient freeze GaAs crystal growthPark, Young Ju et al. | 1995
- 491
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Announcement| 1995
- 492
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Author index| 1995
- 497
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Subject index| 1995
- 500
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Instructions to Contributors| 1995