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An aptitude for attenuated phase shift mask (AttPSM) blank of zirconium silicon oxide (ZrSiO) films for excimer laser lithography use was evaluated. ZrSiO films were deposited by DC or RF sputtering in Ar mixed with O2 gas using ZrSi2 target. Since optical constants of ZrSiO films vary with sputtering parameters, their bi-layer structures can fulfill optical quality required AttPSM. They have high durability to heating conc. H2SO4 independent of their optical constants. Internal stress varies from initial compression to tensile side by annealing to obtain conveniently a low stressed blank. Sheet resistance and surface roughness are sufficiently small to fabricate AttPSM pattern including sub-micron features. They are etched by chlorine-based gases, resulting in high dry etch selectivity to quartz substrate. Although they are expected to have potential in durability to excimer laser, it should be evaluated under the conditions similar to exposure system.