Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 mu m emission (English)
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In:
Molecular Beam Epitaxy, International Conference, 10
;
1024-1027
;
1999
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ISSN:
- Conference paper / Print
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Title:Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 mu m emission
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Contributors:Genty, F. ( author ) / Almuneau, G. ( author ) / Chusseau, L. ( author ) / Wilk, A. ( author ) / Gaillard, S. ( author ) / Boissier, G. ( author ) / Grech, P. ( author ) / Jacquet, J. ( author )
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Published in:Journal of Crystal Growth ; 201-202 ; 1024-1027
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Publisher:
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Publication date:1999
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Size:4 Seiten, 8 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:Aluminiumverbindung , Elektrolumineszenz , Galliumarsenid , Drei-Fünf-Verbindung , Laserspiegel , Molekularstrahlepitaxie , Reflexionsvermögen , Halbleiterepitaxialschicht , Halbleiterwachstum , oberflächenemittierender Laser mit vertikalem Hohlraum , Indiumphosphid , 2-Mikrometer-Bereich , 80-K-Bereich
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Source: