Analysis of a hysteretic circuit containing an iron-cored inductor and a semiconductor switch (English)
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In:
IEE Proceedings - Circuits, Devices and Systems
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146
, 4
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176-183
;
1999
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ISSN:
- Article (Journal) / Print
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Title:Analysis of a hysteretic circuit containing an iron-cored inductor and a semiconductor switch
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Contributors:
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Published in:IEE Proceedings - Circuits, Devices and Systems ; 146, 4 ; 176-183
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Publisher:
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Publication date:1999
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Size:8 Seiten, 15 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 146, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 153
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Testability and test compaction for decision diagram circuitsBystrov, A. et al. | 1999
- 159
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New distributed arithmetic algorithm and its application to IDCTChang, T.-S. et al. | 1999
- 164
-
Searching optimal ROBDDs using methodologies based on evolutionary algorithmsGomez Pulido, J.A. et al. | 1999
- 169
-
Non-Gaussian kernel circuits in analogue VLSI: Implications for RBF network performanceMayes, D.J. et al. | 1999
- 176
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Analysis of a hysteretic circuit containing an iron-cored inductor and a semiconductor switchMatsuo, T. et al. | 1999
- 184
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256 x 256-pixel CMOS digital camera for computer vision with 32 algorithmic ADCs on boardSimoni, A. et al. | 1999
- 191
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Low power parallel spread-spectrum correlatorGarrett, D. et al. | 1999
- 197
-
Transmission of wideband DC-coupled analogue signals over fibreWilson, B. et al. | 1999
- 203
-
Formalised method for effecting multiple modes in single MOS gated power devicesPalmer, P.R. et al. | 1999
- 211
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HEMT modelling using semi-physical expressions for the equilibrium space-charge parameters of the modulation doped heterojunctionRamakrishna, S. et al. | 1999
- 215
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Simple method for the determination of the coupling coefficient of floating-gate MOSFETs programmed with Fowler-Nordheim tunnellingReyes-Barranca, M.A. et al. | 1999
- 218
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Tunnelling current analysis of GaAs n++-p++-n++ ultrathin barrier structures grown by molecular layer epitaxyLiu, Y.X. et al. | 1999