X-ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots (English)
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In:
Semiconductors
;
33
, 11
;
1229-1237
;
1999
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ISSN:
- Article (Journal) / Print
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Title:X-ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots
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Contributors:Faleev, N.N. ( author ) / Egorov, A.Y. ( author ) / Zhukov, A.E. ( author ) / Kovsh, A.R. ( author ) / Mikhrin, S.S. ( author ) / Ustinov, V.M. ( author ) / Pavlov, K.M. ( author ) / Punegov, V.I. ( author ) / Tabuchi, K.M. ( author ) / Takeda, Y. ( author )
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Published in:Semiconductors ; 33, 11 ; 1229-1237
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Publisher:
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Publication date:1999
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Size:9 Seiten, 27 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 33, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1157
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Spatially inhomogeneous oxygen precipitation in siliconBulyarskii, S. V. / Svetukhin, V. V. / Prikhod’ko, O. V. et al. | 1999
- 1163
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Enhanced formation of thermal donors in irradiated germanium: Local vibrational mode spectroscopyKlechko, A. A. / Litvinov, V. V. / Markevich, V. P. / Murin, L. I. et al. | 1999
- 1166
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Radiation defects in semiconductors under hydrostatic pressureBrudnyi, V. N. et al. | 1999
- 1171
-
Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edgeVlasenko, A. I. / Vlasenko, Z. K. / Lyubchenko, A. V. et al. | 1999
- 1175
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The electron density of semiconductors with charged dislocations placed in external fieldsVeliev, Z. A. et al. | 1999
- 1178
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Activation of impurities in ZnSe crystals, stimulated by a laser shock waveBaidullaeva, A. / Vlasenko, A. I. / Gorkovenko, B. L. / Mozol’, P. E. et al. | 1999
- 1182
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Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structuresSubashiev, A. V. / Mamaev, Yu. A. / Oskotskii, B. D. / Yashin, Yu. P. / Kalevich, V. K. et al. | 1999
- 1188
-
Deep-level transient spectroscopy of radiation-induced levels in 6H-SiCBallandovich, V. S. et al. | 1999
- 1193
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Physical properties of CdGeAs2 crystals grown by solid-state synthesisRud’, V. Yu. / Rud’, Yu. V. / Ushakova, T. N. et al. | 1999
- 1196
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Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strainAverkiev, N. S. / Gutkin, A. A. / Reshchikov, M. A. et al. | 1999
- 1202
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Using the temperature-dependent photovoltage to investigate porous silicon/silicon structuresVenger, E. F. / Kaganovich, É. B. / Kirillova, S. I. / Manoilov, É. G. / Primachenko, V. E. / Svechnikov, S. V. et al. | 1999
- 1206
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Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layersVasilevskii, K. V. / Rendakova, S. V. / Nikitina, I. P. / Babanin, A. I. / Andreev, A. N. / Zekentes, K. et al. | 1999
- 1212
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Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si/SiO2 interfaceBochkareva, N. I. / Khorev, S. A. et al. | 1999
- 1216
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Statistical delay of microplasma breakdown in GaP p-n junctionsBulyarskii, S. V. / Serëzhkin, Yu. N. / Ionychev, V. K. et al. | 1999
- 1221
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On the transformation of the potential barrier at a GaAs/Au interface during heat treatmentBednyi, B. I. et al. | 1999
- 1225
-
Absorption of a strong electromagnetic wave by electrons in a superlattice in a quantizing electric fieldZav’yalov, D. V. / Kryuchkov, S. V. et al. | 1999
- 1229
-
X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dotsFaleev, N. N. / Egorov, A. Yu. / Zhukov, A. E. / Kovsh, A. R. / Mikhrin, S. S. / Ustinov, V. M. / Pavlov, K. M. / Punegov, V. I. / Tabuchi, M. / Takeda, Y. et al. | 1999
- 1238
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Quantum Hall effect in a single-mode wireKvon, Z. D. / Ol’shanestkii, E. B. / Katkov, M. I. / Plotnikov, A. E. / Toropov, A. I. / Moshegov, N. T. / Casse, M. / Portal, J. C. et al. | 1999
- 1241
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Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devicesKipshidze, D. G. / Schenk, H. P. / Fissel, A. / Kaiser, U. / Schulze, J. / Richter, Wo. / Weihnacht, M. / Kunze, R. / Kräusslich, J. et al. | 1999
- 1247
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Reversible and irreversible changes in the photoluminescence spectra of porous silicon held in waterDzhumaev, B. R. et al. | 1999
- 1251
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Conductivity and absorption edge of amorphous silicyneMashin, A. I. / Khokhlov, A. F. et al. | 1999
- 1254
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Classification of single-electron devicesAbramov, I. I. / Novik, E. G. et al. | 1999
- 1260
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Temperature dependence of the gain of lasers based on quantum-dot arrays with an inhomogeneously broadened density of statesZhukov, A. E. / Kovsh, A. R. / Ustinov, V. M. et al. | 1999