Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC (English)
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In:
Materials Science Forum
;
1004
;
224-230
;
2020
- Article (Journal) / Electronic Resource
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Title:Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC
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Contributors:
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Published in:Materials Science Forum ; 1004 ; 224-230
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Publisher:
- New search for: Trans Tech Publications Ltd
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Place of publication:Stafa-Zurich, Switzerland
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Publication date:2020-07-28
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 1004
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 5
-
Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method| 2020
- -9
-
Preface| 2020
- 14
-
Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method| 2020
- 20
-
Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method| 2020
- 26
-
Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process| 2020
- 32
-
Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer| 2020
- 37
-
Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production| 2020
- 44
-
Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals| 2020
- 51
-
Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC| 2020
- 57
-
An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis| 2020
- 63
-
X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates| 2020
- 71
-
Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications| 2020
- 78
-
Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool| 2020
- 84
-
Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool| 2020
- 91
-
Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process| 2020
- 96
-
Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al| 2020
- 102
-
Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates| 2020
- 113
-
Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth| 2020
- 120
-
3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress| 2020
- 126
-
Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC| 2020
- 132
-
Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon| 2020
- 139
-
Mono-Versus Poly-Crystalline SiC for Nuclear Applications| 2020
- 145
-
Microscopic Identification of Surface Steps on SiC by Density-Functional Calculations| 2020
- 155
-
Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology| 2020
- 161
-
Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size| 2020
- 167
-
Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer| 2020
- 173
-
Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen| 2020
- 180
-
Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides| 2020
- 186
-
SiC Epitaxial Reactor Cleaning by ClF3 Gas with the Help of Reaction Heat| 2020
- 193
-
Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals| 2020
- 199
-
A New Permanganate-Free Slurry for GaN-SiC CMP Applications| 2020
- 206
-
Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition| 2020
- 215
-
Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region| 2020
- 224
-
Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC| 2020
- 231
-
Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons| 2020
- 237
-
Improved High Precision Dopant/Carrier Concentration Profiling with Corona-Charge Non-Contact C-V (CnCV)| 2020
- 243
-
Wurtzite SiC Formation in Plastic Deformed 3C and 6H| 2020
- 249
-
Evaluation of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation| 2020
- 256
-
SiC Natural and Artificial Superlattices for the Implementation of the Bloch Oscillation Process: A Comparative Analysis| 2020
- 265
-
Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations| 2020
- 272
-
Resistivity Measurement of P+-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic Ellipsometry| 2020
- 278
-
Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC| 2020
- 284
-
Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis Technique| 2020
- 290
-
Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)| 2020
- 299
-
Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping| 2020
- 306
-
A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance| 2020
- 314
-
Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy| 2020
- 321
-
From Wafers to Bits and Back again: Using Deep Learning to Accelerate the Development and Characterization of SiC| 2020
- 331
-
Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC| 2020
- 337
-
Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment| 2020
- 343
-
Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes| 2020
- 349
-
Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC| 2020
- 355
-
Near Infrared Photoluminescence of NCVSi- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles| 2020
- 361
-
The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET| 2020
- 369
-
4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System| 2020
- 376
-
Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers| 2020
- 387
-
Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer| 2020
- 393
-
Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers| 2020
- 401
-
BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE| 2020
- 408
-
Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching| 2020
- 414
-
TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth| 2020
- 421
-
Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers| 2020
- 427
-
Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage| 2020
- 433
-
Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress| 2020
- 439
-
Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Density Substrate or an Epitaxial Wafer with an HNDE| 2020
- 445
-
Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth| 2020
- 451
-
Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence| 2020
- 458
-
Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance| 2020
- 464
-
Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions| 2020
- 472
-
Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test| 2020
- 479
-
Evolution of SiOx Shell Layers on SiC-SiOx Core-Shell Nanowires| 2020
- 490
-
Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes| 2020
- 497
-
Defects Characterization of GaN Substrate with Hot Implant Process| 2020
- 505
-
Structural Characterization of a Ga2O3 Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM Analysis| 2020
- 512
-
AFM Observation of Etch-Pit Shapes on β-Ga2O3 (001) Surface Formed by Molten Alkali Etching| 2020
- 519
-
Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond| 2020
- 525
-
Graphene Quality Assessment Using an Entropy Approach of SEM Images| 2020
- 535
-
Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC| 2020
- 541
-
Surface Treatment of 4H-SiC MOSFETs Prior to Al2O3 Deposition| 2020
- 547
-
Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition| 2020
- 554
-
Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET| 2020
- 559
-
4H-SiC Power VDMOSFET Manufacturing Utilizing POCl3 Post Oxidation Annealing| 2020
- 565
-
Compatibility of POCl3 Gate Process with the Fabrication of Vertical 4H-SiC MOSFETs| 2020
- 573
-
Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs| 2020
- 581
-
Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC Interface| 2020
- 587
-
Profiling with Depth Resolution of Sub-nm for SiO2/ SiC Interface by Dual-Beam TOF-SIMS Combined with Simulation| 2020
- 595
-
Monitoring on Creation and Annihilation of Interface Trap Levels with NO Oxidation, Re-Oxidation and N2 Annealing with Conductance Measurements| 2020
- 601
-
Photo-Assisted Corona-Charge Characterization of Wide Bandgap Interfaces with Deep Traps Invisible in Standard C-V| 2020
- 608
-
Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations| 2020
- 614
-
Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs| 2020
- 620
-
Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement| 2020
- 627
-
Influence of Non-Uniform Interface Defect Clustering on Field-Effect Mobility in SiC MOSFETs Investigated by Local Deep Level Transient Spectroscopy and Device Simulation| 2020
- 635
-
A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique| 2020
- 642
-
Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs| 2020
- 652
-
Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs| 2020
- 659
-
Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates| 2020
- 665
-
TDDB Lifetime Enhancement in SiC-MOSFETs under Gate-Switching Pperation| 2020
- 671
-
Modeling of Threshold Voltage Hysteresis in SiC MOSFET Device| 2020
- 683
-
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect| 2020
- 689
-
Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC| 2020
- 698
-
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time| 2020
- 705
-
4H-SiC MOSFET Source and Body Laser Annealing Process| 2020
- 712
-
The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing| 2020
- 718
-
Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC| 2020
- 725
-
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology| 2020
- 731
-
Development of SiC Etching by Chlorine Fluoride Gas| 2020
- 738
-
The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices| 2020
- 751
-
The IMOSFET: A Deeply-Scaled Fully-Self-Aligned Trench MOSFET| 2020
- 758
-
Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs| 2020
- 764
-
Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation| 2020
- 770
-
Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation| 2020
- 776
-
1200 V / 200 A V-Groove Trench MOSFET Optimized for Low Power Loss and High Reliability| 2020
- 783
-
Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies| 2020
- 789
-
Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs| 2020
- 795
-
Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS| 2020
- 801
-
Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD| 2020
- 808
-
Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET| 2020
- 814
-
Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs| 2020
- 822
-
Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs| 2020
- 830
-
Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single Process| 2020
- 837
-
Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs| 2020
- 843
-
Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors| 2020
- 850
-
SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study| 2020
- 856
-
Improved SiC MOSFET SPICE Model to Avoid Convergence Errors| 2020
- 865
-
Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs| 2020
- 872
-
1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop| 2020
- 882
-
Common-Drain Bidirectional 1200V SiC MOSFETs| 2020
- 889
-
Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs| 2020
- 899
-
20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs| 2020
- 905
-
Experimental Demonstration of Ruggedness in 13 kV SiC-IGBT| 2020
- 911
-
Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model| 2020
- 917
-
Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-Well| 2020
- 923
-
Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons| 2020
- 933
-
Short Circuit Ruggedness of 600 V SiC Trench JFETs| 2020
- 939
-
Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes| 2020
- 945
-
A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes| 2020
- 953
-
Temperature Dependence of the Bipolar Activation and the Leakage Currents of 10 kV 4H-SiC JBS-Diodes| 2020
- 960
-
Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes| 2020
- 977
-
Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices| 2020
- 985
-
Stress Test of Cascode Switch Using SiC Static Induction Transistor| 2020
- 992
-
Accelerated Testing of SiC Power Devices under High-Field Operating Conditions| 2020
- 998
-
Investigations on the Resistance Reduction Effect of Double-Trench SiC MOSFETs under Repetitive Avalanche Stress| 2020
- 1004
-
High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes| 2020
- 1010
-
Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit Breaker| 2020
- 1016
-
High-Performance SIP Half-Bridge IPM Based on 35mΩ/1200V SiC Stack-Cascode| 2020
- 1022
-
Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module Packaging| 2020
- 1027
-
Effects of Pulsed and DC Body-Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics| 2020
- 1033
-
High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs| 2020
- 1045
-
The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter| 2020
- 1057
-
Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)| 2020
- 1066
-
New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs| 2020
- 1074
-
Impact of Proton Irradiation on Power 4H-SiC MOSFETs| 2020
- 1081
-
Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier| 2020
- 1088
-
Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced Failure| 2020
- 1097
-
Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETs| 2020
- 1104
-
Effect Irradiation with 15 MeV Protons on Properties of 4H- SiC UV Detectors| 2020
- 1109
-
Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges| 2020
- 1115
-
High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET| 2020
- 1123
-
Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications| 2020
- 1129
-
Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power Supply| 2020
- 1134
-
Inrush Current Effects on SiC-MOSFETs for LLC Converter| 2020
- 1141
-
Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETs| 2020
- 1148
-
Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits| 2020