The Effect of Epitaxial Growth on Warp of SiC Wafers (English)
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- New search for: Nakayama, Koji
- New search for: Miyanagi, Youichi
- New search for: Maruyama, K.
- New search for: Okamoto, Yoshihiro
- New search for: Shiomi, Hiromu
- New search for: Nishino, Shigehiro
In:
Materials Science Forum
;
389-393
;
235-238
;
2002
- Article (Journal) / Electronic Resource
-
Title:The Effect of Epitaxial Growth on Warp of SiC Wafers
-
Contributors:
-
Published in:Materials Science Forum ; 389-393 ; 235-238
-
Publisher:
- New search for: Trans Tech Publications
-
Place of publication:Stafa-Zurich, Switzerland
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Publication date:2002-04-01
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Size:4 pages
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ISSN:
-
DOI:
-
Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 389-393
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Silicon Carbide Technology in New Era| 2002
- 9
-
Characterisation and Defects in Silicon Carbide| 2002
- 15
-
Opportunities and Technical Strategies for Silicon Carbide Device Development| 2002
- 23
-
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production| 2002
- 29
-
Growth and Defect Reduction of Bulk SiC Crystals| 2002
- 35
-
Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport| 2002
- 39
-
Lateral Enlargement of Silicon Carbide Crystals| 2002
- 43
-
Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth| 2002
- 47
-
4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots| 2002
- 51
-
The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity| 2002
- 55
-
Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC| 2002
- 59
-
Reduction of Macrodefects in Bulk SiC Single Crystals| 2002
- 63
-
Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals| 2002
- 67
-
Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes| 2002
- 71
-
The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide| 2002
- 75
-
Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method| 2002
- 79
-
Observation of Planar Defects in 2-inch SiC Wafer| 2002
- 83
-
Flux-Controlled Sublimation Growth by an Inner Guide-Tube| 2002
- 87
-
Growth and Evaluation of High Quality SiC Crystal by Sublimation Method| 2002
- 91
-
'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging| 2002
- 95
-
Influence of the Crystal Thickness on the SiC PVT Growth Rate| 2002
- 99
-
Micropipe Formation Model via Surface Step Interaction| 2002
- 103
-
Self-Healing Phenomenon of Micropipes in Silicon Carbide| 2002
- 107
-
A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth| 2002
- 111
-
Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth| 2002
- 115
-
The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates| 2002
- 119
-
Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates| 2002
- 123
-
The Development of 4H-SiC {03-38} Wafers| 2002
- 127
-
Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth| 2002
- 131
-
Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method| 2002
- 135
-
Resistivity Mapping of Semi-Insulating 6H-SiC Wafers| 2002
- 139
-
On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals| 2002
- 143
-
Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals| 2002
- 147
-
Full Si Wafer Conversion into Bulk 3C-SiC| 2002
- 151
-
QuaSiC Smart-Cut® Substrates for SiC High Power Devices| 2002
- 155
-
CVD SiC Powder for High-Purity SiC Source Material| 2002
- 159
-
Direct Synthesis and Growth of SiC Single Crystal from Ultrafine Particle Precursor| 2002
- 165
-
Recent Achievements and Future Challenges in SiC Homoepitaxial Growth| 2002
- 171
-
Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers| 2002
- 171
-
Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC EpilayersTsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2002
- 175
-
Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD| 2002
- 179
-
High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor| 2002
- 183
-
Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition| 2002
- 183
-
Fast Growth and Doping Characteristics of alpha-SiC in Horizontal Cold-Wall Chemical Vapor DepositionNakamura, S. / Kimoto, T. / Matsunami, H. et al. | 2002
- 187
-
Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation| 2002
- 191
-
Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation| 2002
- 195
-
Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction| 2002
- 199
-
Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System| 2002
- 203
-
Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters| 2002
- 207
-
Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System| 2002
- 207
-
Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD SystemWagner, G. / Leitenberger, W. / Irmscher, K. / Schmid, F. / Laube, M. / Pensl, G. et al. | 2002
- 211
-
Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor| 2002
- 215
-
Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition| 2002
- 219
-
Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition| 2002
- 223
-
Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition| 2002
- 227
-
Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor| 2002
- 231
-
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers| 2002
- 235
-
The Effect of Epitaxial Growth on Warp of SiC Wafers| 2002
- 239
-
In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth| 2002
- 243
-
Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD| 2002
- 247
-
Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique| 2002
- 251
-
Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces| 2002
- 255
-
Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates| 2002
- 259
-
Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques| 2002
- 263
-
Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS| 2002
- 267
-
Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor| 2002
- 271
-
TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth| 2002
- 275
-
3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics| 2002
- 279
-
Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy| 2002
- 283
-
Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers| 2002
- 287
-
Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers| 2002
- 291
-
Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts| 2002
- 295
-
Traveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiC| 2002
- 295
-
Traveling Self-Confined-Solvent Method: Novel LPE Growth of 6H-SiCAsaoka, Y. / Hiramoto, M. / Sano, N. / Kaneko, T. et al. | 2002
- 299
-
Homoepitaxial Growth of 4H-SiC Thin Film Below 1000^oC by Microwave Plasma Chemical Vapor DepositionOkamoto, M. / Kosugi, R. / Tanaka, Y. / Takeuchi, D. / Nakashima, S. / Nishizawa, S. / Fukuda, K. / Okushi, H. / Arai, K. et al. | 2002
- 299
-
Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition| 2002
- 303
-
In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source| 2002
- 307
-
SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC| 2002
- 311
-
Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy| 2002
- 315
-
3C-SiC Growth on 6H-SiC (0001) Substrates| 2002
- 319
-
Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates| 2002
- 323
-
Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films| 2002
- 327
-
Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers| 2002
- 331
-
Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate| 2002
- 335
-
Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry| 2002
- 339
-
In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD| 2002
- 343
-
Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI| 2002
- 347
-
Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace| 2002
- 351
-
Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer| 2002
- 355
-
Electrical Characterization of SiC/Si Heterostructures with Modified Interfaces| 2002
- 359
-
Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon| 2002
- 363
-
Reaction Mechanism of the Carbonization Process by Low-Energy Ion Subplantation| 2002
- 367
-
Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD| 2002
- 371
-
Fabrication of α-SiC Heteroepitaxial Films by YAG-PLAD Method| 2002
- 371
-
Fabrication of alpha-SiC Heteroepitaxial Films by YAG-PLAD MethodMuto, H. / Kusumori, T. et al. | 2002
- 375
-
Low-Temperature Preparation of α-SiC Epitaxial Films by Nd: YAG Pulsed-Laser Deposition| 2002
- 375
-
Low-Temperature Preparation of alpha-SiC Epitaxial Films by Nd: YAG Pulsed-Laser DepositionKusumori, T. / Muto, H. et al. | 2002
- 379
-
Physics of Heteroepitaxy and Heterophases| 2002
- 385
-
Growth-Induced Structural Defects in SiC PVT Boules| 2002
- 391
-
Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography| 2002
- 395
-
Behavior of Micropipes during Growth in 4H-SiC| 2002
- 399
-
Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals| 2002
- 403
-
Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method| 2002
- 407
-
Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8| 2002
- 411
-
Observation of 2in SiC Wafer by SWBXT at SPring-8| 2002
- 415
-
Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC| 2002
- 419
-
Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography| 2002
- 423
-
Structural Defects in Electrically Degraded 4H-SiC PiN Diodes| 2002
- 427
-
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes| 2002
- 431
-
Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes| 2002
- 435
-
Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC| 2002
- 439
-
Theoretical Calculation of Stacking Fault Energies in Silicon Carbide| 2002
- 443
-
A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers| 2002
- 447
-
Replication of Defects from 4H-SiC Wafer to Epitaxial Layer| 2002
- 451
-
4H- to 3C-SiC Polytypic Transformation during Oxidation| 2002
- 455
-
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers| 2002
- 459
-
Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers| 2002
- 463
-
RHEED: A Tool for Structural Investigations of Thin Polytypic SiC Layers| 2002
- 467
-
Electron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission Gun| 2002
- 471
-
The Nature and Diffusion of Intrinsic Point Defects in SiC| 2002
- 477
-
Theoretical Investigation of an Intrinsic Defect in SiC| 2002
- 481
-
Carbon Interstitials in SiC: A Model for the DII Center| 2002
- 485
-
Chemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening Technique| 2002
- 489
-
Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy| 2002
- 493
-
Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy| 2002
- 497
-
EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC| 2002
- 501
-
The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction| 2002
- 505
-
Properties of the UD-1 Deep-Level Center in 4H-SiC| 2002
- 509
-
Electronic Structure of the UD3 Defect in 4H- and 6H-SiC| 2002
- 513
-
Depth Distribution of Lattice Damage-Related DI and DII Defects after Ion Implantation and Annealing of 6H-SiC| 2002
- 517
-
Electrical Properties of Neutron-Irradiated Silicon Carbide| 2002
- 521
-
Radiation-Induced Defects in p-Type Silicon Carbide| 2002
- 525
-
Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance| 2002
- 529
-
Electronic Localization around Stacking Faults in Silicon Carbide| 2002
- 533
-
Theoretical Study of Cubic Polytype Inclusions in 4H-SiC| 2002
- 537
-
Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC| 2002
- 541
-
Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC| 2002
- 545
-
Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis| 2002
- 549
-
Electrical Activity of Residual Boron in Silicon Carbide| 2002
- 553
-
Ab Initio Calculations of B Diffusion in SiC| 2002
- 557
-
Aluminum and Boron Diffusion into (1-100) Face SiC Substrates| 2002
- 561
-
Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping in SiCAradi, B. / Gali, A. / Deak, P. / Son, N. T. / Janzen, E. et al. | 2002
- 561
-
Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC| 2002
- 565
-
Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth| 2002
- 569
-
Hydrogen Incorporation into SiC Using Plasma-Hydrogenation| 2002
- 573
-
Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC| 2002
- 577
-
Theoretical Studies of Vanadium Impurity in beta-SiCTairov, Y. M. / Reshanov, S. A. / Parfenova, I. I. / Yuryeva, E. I. / Ivanovskii, A. L. et al. | 2002
- 577
-
Theoretical Studies of Vanadium Impurity in β-SiC| 2002
- 581
-
New and Improved Quantitative Characterization of SiC Using SIMS| 2002
- 585
-
Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC| 2002
- 589
-
Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor| 2002
- 593
-
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy| 2002
- 597
-
Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation| 2002
- 601
-
UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC| 2002
- 605
-
Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature| 2002
- 609
-
Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC| 2002
- 613
-
Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy| 2002
- 617
-
Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum| 2002
- 621
-
Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy| 2002
- 625
-
Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy| 2002
- 629
-
Sensitive Detection of Defects in alpha and beta SiC by Raman ScatteringNakashima, S. / Nakatake, Y. / Ishida, Y. / Takahashi, T. / Okumura, H. et al. | 2002
- 629
-
Sensitive Detection of Defects in α and β SiC by Raman Scattering| 2002
- 633
-
Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC| 2002
- 637
-
A Raman Study of Metal-SiC Interface Reactions| 2002
- 641
-
Ultrafast Electron Relaxation Processes in SiC| 2002
- 647
-
Optical Characterization of Ion-Implanted 4H-SiC| 2002
- 651
-
Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC| 2002
- 655
-
Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy| 2002
- 659
-
Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition| 2002
- 663
-
Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy| 2002
- 667
-
Nanoscale Electrical Characterization of 3C-SiC Layers by Conductive Atomic Force Microscopy| 2002
- 671
-
Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide| 2002
- 675
-
Optical and Electrical Characterization of Free-Standing 3C-SiC Films Grown on Undulant 6in Si Substrates| 2002
- 679
-
Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC| 2002
- 683
-
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization| 2002
- 687
-
Scanning Acoustic Microscopy in Porous SiC| 2002
- 691
-
Atomic-Scale Passivation of Silicon Carbide Surfaces| 2002
- 697
-
Adsorption of Metastable Molecular Oxygen on SiC(0001)-√3 x √3| 2002
- 701
-
Oxidation States Present on SiC (0001) after Oxygen Exposure| 2002
- 705
-
Adsorbate Effects of the Surface Structure of 6H-SiC(0001) √3 x √3-R30^oAoyama, T. / Hisada, Y. / Mukainakano, S. / Ichimiya, A. et al. | 2002
- 705
-
Adsorbate Effects of the Surface Structure of 6H-SiC(0001) √3x√3-R30°| 2002
- 709
-
In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces| 2002
- 713
-
A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces| 2002
- 717
-
Wet-Chemical Preparation of Silicate Adlayer Reconstructed SiC(0001) Surfaces as Studied by PES and LEED| 2002
- 721
-
Photoemission Electron Imaging of Transition Metal (Ti, Ni) Surfaces on Si and SiC| 2002
- 725
-
In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)| 2002
- 729
-
Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces| 2002
- 733
-
Optimization of Interface and Interphase Systems: The Case of SiC and III-V Nitrides| 2002
- 737
-
Towards Quantum Structures in SiC| 2002
- 743
-
Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell Calculations| 2002
- 747
-
Growth and Characterization of Three-Dimensional SiC Nanostructures on Si| 2002
- 751
-
Hole Resonant Tunneling through SiC/Si-dot/SiC Heterostructures| 2002
- 755
-
Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface Micromachining| 2002
- 759
-
Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide| 2002
- 763
-
Thermoelectric Properties of 3C-SiC Produced by Silicon Carbonization| 2002
- 767
-
The Brittle-to-Ductile Transition in 4H-SiC| 2002
- 773
-
Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC| 2002
- 779
-
Range Distributions of Implanted Ions in Silicon Carbide| 2002
- 783
-
Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)| 2002
- 787
-
Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC| 2002
- 791
-
Codoping of 4H-SiC with N- and P-Donors by Ion Implantation| 2002
- 795
-
Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing| 2002
- 799
-
Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing| 2002
- 799
-
Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser AnnealingTanaka, Y. / Tanoue, H. / Arai, K. et al. | 2002
- 803
-
Electrical Characteristics of Al+ Ion-Implanted 4H-SiC| 2002
- 807
-
Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiC| 2002
- 811
-
Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC| 2002
- 815
-
Damage Evolution and Recovery in Al-Implanted 4H-SiC| 2002
- 819
-
Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap| 2002
- 823
-
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC| 2002
- 827
-
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects| 2002
- 831
-
Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum| 2002
- 835
-
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices| 2002
- 839
-
Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)| 2002
- 843
-
Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC| 2002
- 847
-
Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)| 2002
- 851
-
Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy| 2002
- 855
-
Enhanced Dopant Diffusion Effects in 4H Silicon Carbide| 2002
- 859
-
Infrared Investigation of Implantation Damage in 6H-SiC| 2002
- 863
-
Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer| 2002
- 867
-
Masking Process for High-Energy and High-Temperature Ion Implantation| 2002
- 871
-
Laser Crystallization Mechanism of Amorphous SiC Thin Films| 2002
- 875
-
Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon Carbide| 2002
- 879
-
Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices| 2002
- 885
-
CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC| 2002
- 889
-
NiSi2 Ohmic Contact to n-Type 4H-SiC| 2002
- 893
-
Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide| 2002
- 897
-
Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC| 2002
- 901
-
Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact Formation| 2002
- 905
-
Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts| 2002
- 909
-
Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces| 2002
- 913
-
Titanium-Based Ohmic Contact on p-Type 4H-SiC| 2002
- 917
-
Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode| 2002
- 921
-
Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission| 2002
- 925
-
Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers| 2002
- 929
-
Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC| 2002
- 933
-
Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation| 2002
- 937
-
Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide| 2002
- 941
-
Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide| 2002
- 945
-
Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact| 2002
- 949
-
Reactive Ion Etching Process of 4H-SiC Using the CHF3/O2 Mixtures and a Post-O2 Plasma-Etching Process| 2002
- 953
-
Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF6/O2 Plasma| 2002
- 957
-
Photoelectrochemical Etching Process of 6H-SiC Wafers Using HF-Based Solution and H2O2 Solution as Electrolytes| 2002
- 961
-
Oxidation of Silicon Carbide: Problems and Solutions| 2002
- 967
-
Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide| 2002
- 973
-
Passivation of the Oxide/4H-SiC Interface| 2002
- 977
-
Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities| 2002
- 981
-
High-Current, NO-Annealed Lateral 4H-SiC MOSFETs| 2002
- 985
-
N2O Processing Improves the 4H-SiC:SiO2 Interface| 2002
- 989
-
Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation| 2002
- 993
-
Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing| 2002
- 997
-
Improvement of SiO~2/alpha-SiC Interface Properties by Nitrogen Radical TreatmentMaeyama, Y. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. / Shirafuji, T. et al. | 2002
- 997
-
Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment| 2002
- 1001
-
New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures| 2002
- 1005
-
On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures| 2002
- 1009
-
Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures| 2002
- 1013
-
The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements| 2002
- 1017
-
Characteristics of Mobile Ions in the SiO2 Films of SiC-MOS Structures| 2002
- 1021
-
Abnormal Hysteresis Property of SiC Oxide C-V Characteristics| 2002
- 1025
-
ESR Characterization of SiC Bulk Crystals and SiO2/SiC Interface| 2002
- 1029
-
Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry| 2002
- 1033
-
X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces| 2002
- 1037
-
SIMS Analyses of SiO2/4H-SiC(0001) Interface| 2002