Structural Characterization of CF-PVT Grown Bulk 3C-SiC (English)
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In:
Materials Science Forum
;
600-603
;
67-70
;
2008
- Article (Journal) / Electronic Resource
-
Title:Structural Characterization of CF-PVT Grown Bulk 3C-SiC
-
Contributors:
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Published in:Materials Science Forum ; 600-603 ; 67-70
-
Publisher:
- New search for: Trans Tech Publications
-
Place of publication:Stafa-Zurich, Switzerland
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Publication date:2008-09-26
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Size:4 pages
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ISSN:
-
DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 600-603
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- -1
-
Overview| 2009
- -2
-
Preface| 2009
- -3
-
Sponsors| 2009
- 3
-
Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities| 2008
- -4
-
Committees| 2009
- 7
-
100 mm 4HN-SiC Wafers with Zero Micropipe Density| 2008
- 11
-
Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT| 2008
- 15
-
Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions| 2008
- 19
-
Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum| 2008
- 23
-
Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals| 2008
- 27
-
Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace| 2008
- 31
-
Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals| 2008
- 35
-
Status of Large Diameter SiC Single Crystals at II-VI| 2008
- 39
-
Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer| 2008
- 43
-
The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk| 2008
- 47
-
Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis| 2008
- 51
-
Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane| 2008
- 55
-
Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System| 2008
- 59
-
Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents| 2008
- 63
-
Stability Growth Condition for 3C-SiC Crystals by Solution Technique| 2008
- 67
-
Structural Characterization of CF-PVT Grown Bulk 3C-SiC| 2008
- 71
-
Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy| 2008
- 77
-
SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices| 2008
- 83
-
Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling| 2008
- 89
-
Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance| 2008
- 95
-
Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes| 2008
- 99
-
Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates| 2008
- 103
-
High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl| 2008
- 103
-
High Quality Epitaxial Growth on 4^o Off-Axis 4H SiC with Addition of HClZhang, J. / Mazzola, J. / Sunkari, S.G. / Stewart, G. / Klein, P.B. / Ward, R.M. / Glaser, E.R. / Lew, K.K. / Gaskill, D.K. / Sankin, I. et al. | 2009
- 107
-
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD| 2008
- 111
-
Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity| 2008
- 115
-
Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor| 2008
- 119
-
Development of a Practical High-Rate CVD System| 2008
- 123
-
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate| 2008
- 127
-
Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions| 2008
- 131
-
Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC| 2008
- 135
-
Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC| 2008
- 139
-
Investigation of Triangular Defects in 4H-SiC 4^o Off Cut (0001) Si Face Epilayers Grown by CVDShrivastava, A. / Muzykov, P. / Pearman, B. / Angel, S.M. / Sudarshan, T.S. et al. | 2009
- 139
-
Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD| 2008
- 143
-
Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers| 2008
- 147
-
In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD| 2008
- 151
-
Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM| 2008
- 155
-
Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers| 2008
- 159
-
Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC| 2008
- 163
-
Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method| 2008
- 167
-
Micropipe Dissociation through Thick n+ Buffer Layer Growth| 2008
- 171
-
Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region| 2008
- 175
-
In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC| 2008
- 179
-
Solution Growth of Off-Axis 4H-SiC for Power Device Application| 2008
- 183
-
Epitaxial TaC Films for the Selective Area Growth of SiC| 2008
- 187
-
Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N2-He Atmosphere| 2008
- 191
-
Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique| 2008
- 195
-
Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS| 2008
- 195
-
Growth Mechanism of 3C-SiC Heteroepitaxial Layers on alpha -SiC by VLSFerro, G. / Soueidan, M. / Kim-Hak, O. / Dazord, J. / Cauwet, F. / Nsouli, B. et al. | 2009
- 199
-
Growth Kinetics of 3C-SiC on α-SiC by VLS| 2008
- 199
-
Growth Kinetics of 3C-SiC on alpha -SiC by VLSSoueidan, M. / Kim-Hak, O. / Ferro, G. / Habka, N. / Nsouli, B. et al. | 2009
- 203
-
3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase| 2008
- 207
-
Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates| 2008
- 211
-
Growth of 3C-SiC on Si: Influence of Process Pressure| 2008
- 215
-
Void Formation in Differently Oriented Si in the Early Stage of SiC Growth| 2008
- 219
-
3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth| 2008
- 223
-
Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon| 2008
- 227
-
Island Formation of SiC Film on Striated Si(001) Substrates| 2008
- 231
-
Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates| 2008
- 235
-
Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD| 2008
- 239
-
Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing| 2008
- 243
-
3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.| 2008
- 247
-
Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas| 2008
- 251
-
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer| 2008
- 255
-
Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD| 2008
- 261
-
Aspects of Dislocation Behavior in SiC| 2008
- 267
-
Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy| 2008
- 273
-
Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes| 2008
- 279
-
EPR Identification of Defects and Impurities in SiC: To be Decisive| 2008
- 285
-
Defects Identified in SiC and Their Implications| 2008
- 291
-
Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces| 2008
- 291
-
Atomic and Electronic Structure of the (2x1) and c(2x2) 4H-SiC(1-102) SurfacesVirojanadara, C. / Hetzel, M. / Johansson, L.I. / Choyke, W.J. / Starke, U. et al. | 2009
- 297
-
Sense Determination of c-Axis Screw Dislocations in 4H-SiC| 2008
- 301
-
Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer| 2008
- 305
-
High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers| 2008
- 309
-
Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC| 2008
- 313
-
Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition| 2008
- 317
-
Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth| 2008
- 321
-
Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry| 2008
- 325
-
Slip of Basal Plane Dislocations in 4H-SiC Epitaxy| 2008
- 329
-
Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC| 2008
- 333
-
Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates| 2008
- 337
-
Raman Scattering Study of Stress Distribution around Dislocation in SiC| 2008
- 341
-
Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions| 2008
- 345
-
Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers| 2008
- 349
-
Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping| 2008
- 353
-
Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure| 2008
- 357
-
Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers| 2008
- 361
-
X-Ray Rocking Curve Characterization of SiC Substrates| 2008
- 365
-
TEM Observation of the Polytype Transformation of Bulk SiC Ingot| 2008
- 369
-
Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films| 2008
- 373
-
Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition| 2008
- 377
-
Investigation of Pits Formed at Oxidation on 4H-SiC| 2008
- 381
-
Intrinsic Defects in HPSI 6H-SiC: an EPR Study| 2008
- 385
-
Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC| 2008
- 389
-
Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates| 2008
- 393
-
Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy| 2008
- 397
-
The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC| 2008
- 401
-
Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates| 2008
- 405
-
Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material| 2008
- 409
-
Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC| 2008
- 413
-
New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC| 2008
- 417
-
Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy| 2008
- 421
-
Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC| 2008
- 425
-
Carrier Removal in Electron Irradiated 4H and 6H SiC| 2008
- 429
-
Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing| 2008
- 433
-
The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC| 2008
- 437
-
Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy| 2008
- 441
-
Ionization Energies of Phosphorus Donors in 6H-SiC| 2008
- 445
-
Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC| 2008
- 449
-
Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 1016 and 1017 cm-3| 2008
- 453
-
A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond| 2008
- 457
-
Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC| 2008
- 461
-
Titanium Related Luminescence in SiC| 2008
- 465
-
Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n+ Junctions| 2008
- 469
-
Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds| 2008
- 473
-
Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces| 2008
- 477
-
Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers| 2008
- 481
-
Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes| 2008
- 485
-
Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers| 2008
- 489
-
Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers| 2008
- 493
-
Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments| 2008
- 497
-
Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects| 2008
- 501
-
Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy| 2008
- 505
-
Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer| 2008
- 509
-
Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means| 2008
- 513
-
The Specific Features of High-Field Transport in SiC Polytypes| 2008
- 517
-
Thermal Expansion Coefficients of 6H Silicon Carbide| 2008
- 521
-
Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method| 2008
- 525
-
Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites| 2008
- 529
-
Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS| 2008
- 533
-
SiC Polytype Stability Influenced by Ge Impurities| 2008
- 537
-
Space Charge Waves in 6H-SiC and 4H-SiC| 2008
- 541
-
Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures| 2008
- 545
-
Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation| 2008
- 549
-
Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography| 2008
- 553
-
Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System| 2008
- 557
-
Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te| 2008
- 563
-
Evolution and Structure of Graphene Layers on SiC(0001)| 2008
- 567
-
Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy| 2008
- 571
-
Dots Formation by CVD in the SiC-Si Hetero-System| 2008
- 571
-
Dots Formation by DVD in the SiC-Si Hetero-SystemBechelany, M. / Ferro, G. / Dazord, J. / Cornu, D. / Miele, P. et al. | 2009
- 575
-
Electronic Band Structure of Cubic Silicon Carbide Nanowires| 2008
- 579
-
Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime| 2008
- 585
-
Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC| 2008
- 591
-
Dynamical Simulation of SiO2/4H-SiC Interface on C-Face Oxidation Process: From First Principles| 2008
- 597
-
Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face| 2008
- 603
-
Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC| 2008
- 607
-
Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices| 2008
- 611
-
Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC| 2008
- 615
-
Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy| 2008
- 619
-
Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC| 2008
- 623
-
Structure and Lattice Location of Ge Implanted 4H-SiC| 2008
- 627
-
Laser Doping of Chromium and Selenium in p-Type 4H-SiC| 2008
- 631
-
Phase Formation and Growth Kinetics of an Interface Layer in Ni/SiC| 2008
- 635
-
Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide| 2008
- 639
-
Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC| 2008
- 643
-
Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode| 2008
- 647
-
Investigation of Subcontact Layers in SiC after Diffusion Welding| 2008
- 651
-
Isotropic Etching of SiC| 2008
- 655
-
4H Silicon Carbide Etching Using Chlorine Trifluoride Gas| 2008
- 659
-
Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen| 2008
- 663
-
Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime| 2008
- 667
-
Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry| 2008
- 671
-
TEM Observation of SiO2/4H-SiC Hetero Interface| 2008
- 675
-
Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face| 2008
- 679
-
Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures| 2008
- 683
-
Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure| 2008
- 687
-
Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique| 2008
- 691
-
High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing| 2008
- 695
-
High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface| 2008
- 699
-
Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation| 2008
- 703
-
Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays| 2008
- 707
-
Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays| 2008
- 711
-
4H-SiC p-Channel MOSFETs with Epi-Channel Structure| 2008
- 715
-
Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs| 2008
- 719
-
Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs| 2008
- 723
-
The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States - a Theoretical Study| 2008
- 727
-
Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy| 2008
- 731
-
Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface| 2008
- 735
-
Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor| 2008
- 739
-
High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C| 2008
- 739
-
High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600^oCGhosh, R.N. / Loloee, R. / Isaacs-Smith, T. / Williams, J.R. et al. | 2009
- 743
-
The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping| 2008
- 747
-
Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs| 2008
- 751
-
Optimization of 4H-SiC MOS Properties with Cesium Implantation| 2008
- 755
-
A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen| 2008
- 759
-
Interface and Carrier Transport Behaviour in Al/HfO2/SiO2/SiC Structure| 2008
- 763
-
Improved Properties of AlON/4H SiC Interface for Passivation Studies| 2008
- 767
-
Influence of Annealing on the Al2O3/4H-SiC Interface| 2008
- 771
-
Post Metallization Annealing Characterization of Interface Properties of High- kappa Dielectrics Stack on Silicon CarbideWeng, M.H. / Mahapatra, R. / Wright, N.G. / Horsfall, A.B. et al. | 2009
- 771
-
Post Metallization Annealing Characterization of Interface Properties of High-κ Dielectrics Stack on Silicon Carbide| 2008
- 775
-
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers| 2008
- 779
-
Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration| 2008
- 783
-
Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC| 2008
- 787
-
Gate-Area Dependence of SiC Thermal Oxides Reliability| 2008
- 791
-
Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)| 2008
- 795
-
Negative Field Reliability of ONO Gate Dielectric on 4H-SiC| 2008
- 799
-
TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition| 2008
- 803
-
Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides| 2008
- 807
-
Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability| 2008
- 811
-
Characteristics of Sol-Gel Derived SiO2 Thick Film on 4H-SiC| 2008
- 815
-
New Chemical Planarization of SiC and GaN Using an Fe Plate in H2O2 Solution| 2008
- 819
-
Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications| 2008
- 823
-
Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing| 2008
- 827
-
The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes| 2008
- 831
-
Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)| 2008
- 835
-
Damage-Free Planarization of 2-Inch 4H-SiC Wafer Using Pt Catalyst Plate and HF Solution| 2008
- 839
-
The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries| 2008
- 843
-
Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining| 2008
- 847
-
Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide| 2008
- 851
-
Electric Discharge Machining for Silicon Carbide and Related Materials| 2008
- 855
-
Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal| 2008
- 859
-
A Silicon Carbide Accelerometer for Extreme Environment Applications| 2008
- 863
-
An Examination of Material-Related Performance in SiC Heated Elements for IR Emitter and Sensor Applications| 2008
- 867
-
Mechanical Properties of Poly 3C-SiC Thin Films According to Carrier Gas (H2) Concentration| 2008
- 871
-
Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps| 2008
- 875
-
Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE| 2008
- 879
-
Femtosecond Laser-Induced Surface Patterning on 4H-SiC| 2008
- 883
-
Cross-Sectional TEM Analysis of Structural Change in 4H-SiC Single Crystal Irradiated by Femtosecond Laser Pulses| 2008
- 889
-
Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices| 2008
- 895
-
Critical Technical Issues in High Voltage SiC Power Devices| 2008
- 901
-
SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch| 2008
- 907
-
Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance| 2008
- 913
-
Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter| 2008
- 919
-
Applications-Based Design of SiC Technology| 2008
- 925
-
New Applications in Power Electronics Based on SiC Power Devices| 2008
- 931
-
Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers| 2008
- 935
-
Reliability Aspects of High Voltage 4H-SiC JBS Diodes| 2008
- 939
-
1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current| 2008
- 943
-
High-Current 10 kV SiC JBS Rectifier Performance| 2008
- 947
-
5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application| 2008
- 951
-
10 kV Silicon Carbide Junction Barrier Schottky Rectifier| 2008
- 955
-
Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction| 2008
- 959
-
Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process| 2008
- 963
-
Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode| 2008
- 967
-
Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy| 2008
- 971
-
Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor| 2008
- 975
-
Device Simulation Model for Transient Analysis of SiC-SBD| 2008
- 979
-
Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process| 2008
- 983
-
Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes| 2008
- 987
-
Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO2 and Sputter Deposited AlN Dielectric Stack| 2008
- 991
-
3.3 kV-10A 4H-SiC PiN Diodes| 2008
- 995
-
Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes| 2008
- 999
-
Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current| 2008