Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace (English)
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- New search for: Balachandran, Anusha
- New search for: Song, Hai Zheng
- New search for: Sudarshan, T.S.
- New search for: Shetu, Shamaita S.
- New search for: Chandrashekhar, M.V.S.
In:
Materials Science Forum
;
821-823
;
137-140
;
2015
- Article (Journal) / Electronic Resource
-
Title:Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace
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Contributors:
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Published in:Materials Science Forum ; 821-823 ; 137-140
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Publisher:
- New search for: Trans Tech Publications
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Place of publication:Stafa-Zurich, Switzerland
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Publication date:2015-06-30
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 821-823
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Dislocation Conversion During SiC Solution Growth for High-Quality Crystals| 2015
- -3
-
Preface, Committees and Sponsors| 2015
- 9
-
4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions| 2015
- 14
-
Change in Surface Morphology by Addition of Impurity Elements in 4H-SiC Solution Growth with Si Solvent| 2015
- 18
-
Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal| 2015
- 22
-
Effect of Forced Convection by Crucible Design in Solution Growth of SiC Single Crystal| 2015
- 26
-
Effects of Crystalline Polarity and Temperature Gradient on Step Bunching Behavior of Off-Axis 4H-SiC Solution Growth| 2015
- 31
-
Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds| 2015
- 35
-
Influences of Solution Flow and Lateral Temperature Distribution on Surface Morphology in Solution Growth of SiC| 2015
- 39
-
Research on Solvent Composition for Different Surface Morphology on C Face during 4H-SiC Solution Growth| 2015
- 43
-
Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method| 2015
- 47
-
Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method| 2015
- 51
-
High Quality 100 mm 4H-SiC Substrate| 2015
- 56
-
High Quality 150 mm 4H SiC Wafers for Power Device Production| 2015
- 60
-
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC| 2015
- 64
-
Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules| 2015
- 68
-
Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces| 2015
- 73
-
Polarity Inversion of SiC(0001) during the Al Doped PVT Growth| 2015
- 77
-
Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC| 2015
- 81
-
SIMS Analysis of Fe Impurity Concentration in a PVT-Grown 4H-SiC Bulk Crystal and Source Powders| 2015
- 85
-
Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC| 2015
- 90
-
Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals| 2015
- 96
-
Assessment of SiC Crystal Chemistry during the PVT Growth Process: Coupled Numerical Modeling and Thermodynamics Approach| 2015
- 100
-
Characterization of Second-Phase Inclusion in Silicon Carbide Powders| 2015
- 104
-
High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method| 2015
- 108
-
Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor| 2015
- 115
-
Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation| 2015
- 121
-
Behavior and Chemical Reactions of Liquid Si and Ge on SiС Surface| 2015
- 125
-
Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor| 2015
- 129
-
Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor| 2015
- 133
-
Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy| 2015
- 137
-
Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace| 2015
- 141
-
The Role of Chlorine during High Growth Rate Epitaxy| 2015
- 145
-
Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC| 2015
- 149
-
Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers| 2015
- 153
-
150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor| 2015
- 157
-
Epitaxial Growth on 150 mm 2° off Wafers| 2015
- 161
-
Progress of SiC Epitaxy on 150mm Substrates| 2015
- 165
-
SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor| 2015
- 169
-
Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC| 2015
- 173
-
Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers| 2015
- 177
-
Influence of Epi-Layer Growth Pits on SiC Device Characteristics| 2015
- 181
-
Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates| 2015
- 185
-
3C-SiC Crystal on Sapphire by Solution Growth Method| 2015
- 189
-
3C-SiC Polycrystalline Films on Si for Photovoltaic Applications| 2015
- 193
-
Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning| 2015
- 197
-
High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si2Cl6+C3H8| 2015
- 201
-
Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction| 2015
- 205
-
Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation| 2015
- 209
-
Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD| 2015
- 213
-
PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure| 2015
- 217
-
Effect of Nitrogen Dilution in the Optical Properties of Amorphous SiC Thin Films| 2015
- 223
-
Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current| 2015
- 229
-
Characterising Strain/Stress and Defects in SiC Wafers Using Raman Imaging| 2015
- 233
-
Residual Stress Analysis of Indentation on 4H-SiC by Deep-Ultraviolet Excited Raman Spectroscopy| 2015
- 237
-
Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy| 2015
- 241
-
Applying Chemometrics for Analysis of SiC Raman Imaging Data| 2015
- 245
-
Probing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum Pulses| 2015
- 249
-
Optical Characterization of p-Type 4H-SiC Epilayers| 2015
- 253
-
Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth| 2015
- 257
-
Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis| 2015
- 261
-
FTIR Studies of Silicon Carbide 1D-Nanostructures| 2015
- 265
-
Infrared Transmission and Reflectivity Measurements of 4H- and 6H-SiC Single Crystals| 2015
- 269
-
Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers| 2015
- 273
-
A Novel Approach to Measuring Doping in SiC by Micro Spot Corona-Kelvin Method| 2015
- 277
-
The Bloch Oscillations and THz Electroluminescence in Natural Superlattices of 6H-, 8H-SiC Polytypes| 2015
- 281
-
Mechanical Properties and Residual Stress of Thin 3C-SiC(100) Films Determined Using MEMS Structures| 2015
- 285
-
Observation of Damaged Layers in 4H-SiC Substrates by Mirror Projection Electron Microscope| 2015
- 289
-
Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures| 2015
- 293
-
Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons| 2015
- 297
-
Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing| 2015
- 303
-
Basal Plane Dislocation Analysis of 4H-SiC Using Multi Directional STEM Observation| 2015
- 307
-
Study on Formation of Dislocation Contrast in 4H-SiC Wafer in Mirror Projection Electron Microscopy Image| 2015
- 311
-
Relations between Surface Morphology and Dislocations of SiC Crystal| 2015
- 315
-
Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode| 2015
- 319
-
Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC| 2015
- 323
-
Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers| 2015
- 327
-
Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers| 2015
- 331
-
Simple Models for Stacking-Fault Formations in 4H-SiС Epitaxial Layer| 2015
- 335
-
4H-SiC Defects Analysis by Micro Raman Spectroscopy| 2015
- 339
-
3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer| 2015
- 343
-
Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence| 2015
- 347
-
Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC| 2015
- 351
-
Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide| 2015
- 355
-
Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications| 2015
- 359
-
Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method| 2015
- 363
-
Ab Initio Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) Surfaces| 2015
- 367
-
Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates| 2015
- 371
-
Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry| 2015
- 375
-
Tuning Optoelectronic Properties of 4H-SiC QDs Using -H, -OH and -F Surface Functionalisation| 2015
- 381
-
SiC Device Manufacturing: How Processing Impacts the Material and Device Properties| 2015
- 387
-
Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal| 2015
- 391
-
Estimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis| 2015
- 395
-
Ohmic Contact on n-Type 3C-SiC Activated with SiO2 Encapsulation| 2015
- 399
-
Al+ Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC| 2015
- 403
-
Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy| 2015
- 407
-
Distribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiC| 2015
- 411
-
Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices| 2015
- 416
-
About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al)| 2015
- 420
-
Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments| 2015
- 424
-
Preliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky Contacts| 2015
- 428
-
Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing| 2015
- 432
-
A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing| 2015
- 436
-
Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor| 2015
- 440
-
Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC| 2015
- 444
-
Investigation of Ti/Ni Bilayer Contacts to n-Type 4H-SiC| 2015
- 448
-
Extremely Enhanced Diffusion of Nitrogen in 4H-SiC Observed in Liquid-Nitrogen Immersion Irradiation of Excimer Laser| 2015
- 452
-
Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and DBC Substrate| 2015
- 456
-
Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities| 2015
- 460
-
Characterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy| 2015
- 464
-
Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation| 2015
- 468
-
Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC| 2015
- 472
-
Evaluation of F-N Tunneling Emission Current in MOS Capacitor Fabricated on Step Bunching| 2015
- 476
-
Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements| 2015
- 480
-
Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces| 2015
- 484
-
Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace| 2015
- 488
-
Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation| 2015
- 492
-
Influence of Phosphorous Auto-Doping on the Characteristics of SiO2/SiC Gate Dielectrics| 2015
- 496
-
Influence of Phosphorus Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure| 2015
- 500
-
Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC| 2015
- 504
-
Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases| 2015
- 508
-
Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer| 2015
- 512
-
MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers| 2015
- 516
-
An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors| 2015
- 520
-
Comparison of Different Novel Chip Separation Methods for 4H-SiC| 2015
- 524
-
High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser| 2015
- 528
-
Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices| 2015
- 533
-
Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking| 2015
- 537
-
Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching| 2015
- 541
-
Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth| 2015
- 545
-
Effect of Surface Damage on SiC Wafer Shape| 2015
- 549
-
Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching| 2015
- 553
-
Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher| 2015
- 559
-
Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias| 2015
- 563
-
Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode| 2015
- 567
-
Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization| 2015
- 571
-
Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current| 2015
- 575
-
Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes| 2015
- 579
-
Fabrication and Application of 1.7KV SiC-Schottky Diodes| 2015
- 583
-
Cryogenic to High Temperature Exploration of 4H-SiC W-SBD| 2015
- 588
-
A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode| 2015
- 592
-
Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules| 2015
- 596
-
Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes| 2015
- 600
-
Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes| 2015
- 604
-
Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications| 2015
- 608
-
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness| 2015
- 612
-
The Effect of Proton and Carbon Irradiation on 4H-SiC 1700V MPS Diode Characteristics| 2015
- 616
-
Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA| 2015
- 620
-
Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC| 2015
- 624
-
Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications| 2015
- 628
-
Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes| 2015
- 632
-
Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes| 2015
- 636
-
4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications| 2015
- 640
-
Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring| 2015
- 644
-
4H-SiC P+N UV Photodiodes for Space Applications| 2015
- 648
-
Characterization of 4H-SiC pn Structures with Unstable Excess Current| 2015
- 652
-
The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices| 2015
- 656
-
Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC| 2015
- 660
-
Industrial Approach for Next Generation of Power Devices Based on 4H-SiC| 2015
- 667
-
Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue| 2015
- 673
-
Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs| 2015
- 677
-
Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs| 2015
- 681
-
Degradation and Reliability of Bare Dies Operated up to 300°C| 2015
- 685
-
Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method| 2015
- 689
-
SiC MOSFETs in Hard-Switching Bidirectional DC/DC Converters| 2015
- 693
-
Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing| 2015
- 697
-
Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements| 2015
- 701
-
Next-Generation Planar SiC MOSFETs from 900 V to 15 kV| 2015
- 705
-
Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments| 2015
- 709
-
Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs| 2015
- 713
-
Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs| 2015
- 717
-
Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization| 2015
- 721
-
Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces| 2015
- 725
-
Reliable 4H-SiC MOSFET with High Threshold Voltage by Al2O3-Inserted Gate Insulator| 2015
- 729
-
Effect of Fixed Oxide Charges and Donor-Like Interface Traps on the Breakdown Voltage of SiC Devices with FGR and JTE Terminations| 2015
- 733
-
Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects| 2015
- 737
-
Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation| 2015
- 741
-
Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide| 2015
- 745
-
Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)| 2015
- 749
-
High-Mobility SiC MOSFETs with Chemically Modified Interfaces| 2015
- 753
-
Impact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom Oxides| 2015
- 757
-
Improved Evaluation Method for Channel Mobility in SiC Trench MOSFETs| 2015
- 761
-
Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET| 2015
- 765
-
CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit| 2015
- 769
-
Low Rons in 3kV 4H-SiC UMOSFET with MeV Implanted Buried P-Base Region| 2015
- 773
-
Electrical Properties Evaluation on High Quality Hetero-Epitaxial 3C-SiC(001) for MOSFET Applications| 2015
- 777
-
Cryogenic Characterization of Commercial SiC Power MOSFETs| 2015
- 781
-
Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design| 2015
- 785
-
The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices| 2015
- 789
-
VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures| 2015
- 793
-
4H-SiC VJFETs with Self-Aligned Contacts| 2015
- 797
-
Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET| 2015
- 801
-
IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes| 2015
- 806
-
Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability| 2015
- 810
-
Short-Circuit Capability Exploration of Silicon Carbide Devices| 2015
- 814
-
Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature| 2015
- 818
-
Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer| 2015
- 822
-
Improvement of the Current Gain Stability of SiC Junction Transistors| 2015
- 826
-
Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors| 2015
- 830
-
Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module| 2015
- 834
-
Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges| 2015
- 838
-
4.5-kV 20-mΩ.cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension| 2015
- 842
-
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs| 2015
- 847
-
27 kV, 20 A 4H-SiC n-IGBTs| 2015
- 851
-
Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs| 2015
- 855
-
Silicon Carbide Nanowire Devices for Label-Free Electrical DNA Detection| 2015
- 859
-
High Temperature CMOS Circuits on Silicon Carbide| 2015
- 863
-
Simulations of Interactions between Fast Neutrons and 4H-SiC Detectors| 2015
- 867
-
SiC UV Detectors under Heavy Ions Irradiation| 2015
- 871
-
High Voltage Wide Bandgap Photoconductive Switching| 2015
- 875
-
Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation| 2015
- 879
-
Development of SiC Power Module and Loss Evaluation in DC-DC Converter Circuit Application| 2015
- 884
-
Full SiC DCDC-Converter with a Power Density of more than 100kW/dm3| 2015
- 889
-
Comparison of Turn-Off Strategies for SiC Thyristors| 2015
- 893
-
High Current (1225A) Optical Triggering of 18-kV 4H-SiC Thyristor in Purely Inductive Load Circuit| 2015
- 897
-
Design and Characterization of 500 °C Schmitt Trigger in 4H-SiC| 2015
- 902
-
Hetero-Epitaxial Single Crystal 3C-SiC Opto-Mechanical Pressure Sensor| 2015
- 906
-
Improved Planar MOS Barrier Schottky (PMBS) Rectifier with High-k Dielectrics| 2015
- 910
-
ECL-Based SiC Logic Circuits for Extreme Temperatures| 2015
- 914
-
High-Temperature Operation of Electrostatically-Excited Single-Crystalline 4H-SiC Microcantilever Resonators| 2015
- 919
-
Pressureless Ag Thin-Film Die-Attach for SiC Devices| 2015
- 923
-
Nanoscale Dynamic Mechanical Analysis on Heat-Resistant Silsesquioxane Nanocomposite for Power-Device Packaging| 2015
- 929
-
Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping| 2015
- 933
-
Graphene Ohmic Contacts to n-Type Silicon Carbide (0001)| 2015
- 937
-
Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates| 2015
- 941
-
Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors| 2015
- 945
-
RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates| 2015
- 949
-
A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation Treatment| 2015
- 953
-
Tuning the Terrace and Step Stability of 6H-SiC (0001) for Graphene Film Deposition| 2015
- 957
-
Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)| 2015
- 961
-
On the Formation of Graphene by Ge Intercalation of a 4H-SiC Surface| 2015
- 965
-
Si NWs Conversion to Si-SiC Core-Shell NWs by MBE| 2015
- 970
-
The Role of Aluminium in the Synthesis of Mesoporous 4H Silicon Carbide| 2015
- 974
-
Synthesis and Characterization of Al4SiC4: A “New” Wide Band Gap Semiconductor Material| 2015
- 978
-
Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect| 2015
- 982
-
Influence of Diamond CVD Growth Conditions and Interlayer Material on Diamond/GaN Interface| 2015
- 986
-
Electrical Properties of Graphene Contacts to AlGaN/GaN Heterostructures| 2015
- 990
-
Chemical Vapor Deposition of Boron Nitride Thin Films on SiC| 2015
- 995
-
Innovations in SiC Backside Processing and Manufacturing for GaN/SiC Products| 2015
- 999
-
Microstructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN Heterostructures| 2015
- 1003
-
Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers| 2015
- 1007
-
Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method| 2015
- 1011
-
Synchrotron X-Ray Study on Crack Prevention in AlN Crystals Grown on Gradually Decomposing SiC Substrates| 2015
- 1015
-
Novel Poly-Si/GaN Vertical Heterojunction Diode| 2015