Accumulation-Mode SiC Power MOSFET Design Issues (English)
National licence
- New search for: Wang, Y.
- New search for: Weitzel, C.
- New search for: Bhatnagar, M.
In:
Materials Science Forum
;
338-342
;
1287-1290
;
2000
- Article (Journal) / Electronic Resource
-
Title:Accumulation-Mode SiC Power MOSFET Design Issues
-
Contributors:
-
Published in:Materials Science Forum ; 338-342 ; 1287-1290
-
Publisher:
- New search for: Trans Tech Publications
-
Place of publication:Stafa-Zurich, Switzerland
-
Publication date:2000-05-10
-
Size:4 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 338-342
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications| 2000
- 9
-
Large Diameter PVT Growth of Bulk 6H SiC Crystals| 2000
- 13
-
Progress in SiC Bulk Growth| 2000
- 17
-
Generation and Properties of Semi-Insulating SiC Substrates| 2000
- 21
-
Vanadium-free Semi-insulating 4H-SiC Substrates| 2000
- 25
-
Numerical Simulation of SiC Boule Growth by Sublimation| 2000
- 31
-
Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth| 2000
- 35
-
An Analytical Study of the SiC Growth Process from Vapor Phase| 2000
- 39
-
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions| 2000
- 43
-
Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth| 2000
- 47
-
Seed Surface Preparation for SiC Sublimation Growth| 2000
- 51
-
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method| 2000
- 55
-
Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC| 2000
- 59
-
Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes| 2000
- 63
-
Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide| 2000
- 67
-
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT| 2000
- 71
-
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation| 2000
- 75
-
SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique| 2000
- 79
-
Role of Temperature Gradient in Bulk Crystal Growth of SiC| 2000
- 83
-
Pressure Effect in Sublimation Growth of Bulk SiC| 2000
- 87
-
Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT| 2000
- 91
-
Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics| 2000
- 95
-
Considerations on the Crystal Morphology in the Sublimation Growth of SiC| 2000
- 99
-
Shape of SiC Bulk Single Crystal Grown by Sublimation| 2000
- 103
-
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid| 2000
- 107
-
Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes| 2000
- 111
-
Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method| 2000
- 115
-
Crystal Growth of 15R-SiC Boules by Sublimation Method| 2000
- 119
-
Growth of 3C SiC Single Crystals from Convection Dominated Melts| 2000
- 125
-
An Overview of SiC Growth| 2000
- 131
-
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments| 2000
- 137
-
Morphology Control for Growth of Thick Epitaxial 4H SiC Layers| 2000
- 141
-
Vertical Hot-Wall Type CVD for SiC Growth| 2000
- 145
-
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers| 2000
- 149
-
3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor| 2000
- 153
-
3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction| 2000
- 157
-
The Development of Resistive Heating for the High Temperature Growth of α-SiC using a Vertical CVD Reactor| 2000
- 157
-
The Development of Resistive Heating for the High Temperature Growth of alpha-SiC using a Vertical CVD ReactorEshun, E. / Taylor, C. / Diagne, N. F. / Griffin, J. / Spencer, M. G. / Ferguson, I. / Gurary, A. / Stall, R. et al. | 2000
- 161
-
Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy| 2000
- 165
-
High Growth Rate Epitaxy of Thick 4H-SiC Layers| 2000
- 169
-
Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor| 2000
- 173
-
Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers| 2000
- 177
-
Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane| 2000
- 181
-
Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide| 2000
- 185
-
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth| 2000
- 189
-
4H-SiC (11-20) Epitaxial Growth| 2000
- 193
-
Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres| 2000
- 197
-
Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition| 2000
- 201
-
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy| 2000
- 205
-
Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC| 2000
- 209
-
Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes| 2000
- 213
-
Mechanisms of SiC(111) Step Flow Growth| 2000
- 217
-
Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy| 2000
- 221
-
Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy| 2000
- 225
-
Growth of SiC and GaN on Porous Buffer Layers| 2000
- 229
-
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates| 2000
- 233
-
Temperature Gradient Effect on SiC Epitaxy in Liquid Phase| 2000
- 237
-
Micropipe Healing in Liquid Phase Epitaxial Growth of SiC| 2000
- 241
-
Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor| 2000
- 245
-
Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates| 2000
- 249
-
Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane| 2000
- 253
-
The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate| 2000
- 257
-
Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD| 2000
- 261
-
Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC| 2000
- 265
-
Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets| 2000
- 269
-
Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE| 2000
- 269
-
Formation of High Quality SiC on Si(100) at 900^oC using Monomethylsilane Gas-Source MBENakazawa, H. / Suemitsu, M. / Asami, S. et al. | 2000
- 273
-
Growth and Characterization of N-Doped SiC Films from Trimethylsilane| 2000
- 277
-
The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates| 2000
- 281
-
In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces| 2000
- 285
-
Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si| 2000
- 289
-
The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si| 2000
- 293
-
Studies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas Species| 2000
- 297
-
Carbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulator| 2000
- 301
-
SOL Thinning Effects on 3C-SiC on SOI*| 2000
- 305
-
Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development| 2000
- 309
-
Epitaxial Growth of beta-SiC on Ion-Beam Synthesized beta-SiC: Structural CharacterizationRomano-Rodriguez, A. / Perez-Rodriguez, A. / Serre, C. / Morante, J. R. / Esteve, J. / Acero, M. C. / Kogler, R. / Skorupa, W. / Ostling, M. / Nordell, N. et al. | 2000
- 309
-
Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization| 2000
- 313
-
Growth of Single Crystalline 3C-SiC and AlN on Si using Porous Si as a Compliant Seed CrystalPurser, D. / Jenkins, M. / Lieu, D. / Vaccaro, F. / Faik, A. / Hasan, M.-A. / Leamy, H. J. / Carlin, C. / Sardela, M. R. / Zhao, Q. et al. | 2000
- 313
-
Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal| 2000
- 317
-
The Growth and Characterization of 3C-SiC/SiNx/Si Structure| 2000
- 321
-
The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers| 2000
- 325
-
Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si| 2000
- 329
-
Thin Films of a-Si~1~-~xC~x:H Deposited by PECVD: The R.F. Power and H~2 Dilution RolePrado, R. J. / Fantini, M. C. A. / Tabacniks, M. H. / Pereyra, I. / Flank, A. M. et al. | 2000
- 329
-
Thin Films of α-Si1-xCx:H Deposited by PECVD: The r.f. Power and H2 Dilution Role| 2000
- 335
-
Surface Composition of 4H-SiC as a Function of Temperature| 2000
- 341
-
Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth| 2000
- 345
-
Atomic Structure of 6H-SiC(000-1)-(2x2)c| 2000
- 349
-
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√ 3x√ 3)R30° Reconstruction| 2000
- 349
-
Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√3 x √3)R30^o ReconstructionLu, W. / Kruger, P. / Pollmann, J. et al. | 2000
- 353
-
Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001)| 2000
- 357
-
High Resolution Electron Energy Loss Spectroscopy of √ 3x√ 3 6H-SiC(0001)| 2000
- 361
-
In-Situ RHEED Analysis During α-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy| 2000
- 361
-
In-Situ RHEED Analysis During alpha-SiC Homoepitaxy on (0001)Si- and (000&unknwon;1)C- Faces by Gas Source Molecular Beam EpitaxyHatayama, T. / Fuyuki, T. / Nakamura, S. / Kurobe, K. / Kimoto, T. / Matsunami, H. et al. | 2000
- 365
-
(10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC| 2000
- 369
-
Theory of Structural and Electronic Properties of Cubic SiC Surfaces| 2000
- 375
-
Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces| 2000
- 379
-
Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals| 2000
- 383
-
Silicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiC| 2000
- 387
-
Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC| 2000
- 391
-
Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001)| 2000
- 395
-
Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface| 2000
- 399
-
XPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide Ambient| 2000
- 403
-
Surface Studies on Thermal Oxidation on 4H-SiC Epilayer| 2000
- 407
-
Quantified Conditions for Reduction of ESO Contamination During SiC Metalization| 2000
- 411
-
Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization| 2000
- 415
-
A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated Temperatures| 2000
- 419
-
Study of a Clean Surface of α - SiC and its Metallization Process by Cu, Au and Ni using STM and Electron/Photon Spectroscopies| 2000
- 419
-
Study of a Clean Surface of alpha - SiC and its Metallization Process by Cu, Au and Ni Using STM and Electron/Photon SpectroscopiesIwami, M. / Hirai, M. / Kusaka, M. / Mihara, I. / Saito, T. / Yamaguchi, M. / Morii, T. / Watanabe, M. et al. | 2000
- 423
-
Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC| 2000
- 427
-
Group-III Adsorption and Bond Stacking on SiC(111) SurfacesGrossner, U. / Furthmuller, J. / Bechstedt, F. et al. | 2000
- 427
-
Group-ΙΙΙ Adsorption and Bond Stacking on SiC(111) Surfaces| 2000
- 431
-
Characterization of SiC using Synchrotron White Beam X-ray Topography| 2000
- 437
-
Growth of Low Micropipe Density SiC Wafers| 2000
- 441
-
Investigation of the Origin of Micropipe Defect| 2000
- 445
-
Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals| 2000
- 449
-
Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal| 2000
- 453
-
Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes| 2000
- 457
-
In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography| 2000
- 461
-
X-ray Topographic Study of SiC Crystal at High Temperature| 2000
- 465
-
Synchrotron White Beam Topography Studies of 2H SiC Crystals| 2000
- 469
-
Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet| 2000
- 473
-
X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers| 2000
- 477
-
Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT| 2000
- 481
-
Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching| 2000
- 485
-
Polytype and Defect Control of Two Inch Diameter Bulk SiC| 2000
- 489
-
Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes| 2000
- 493
-
Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry| 2000
- 497
-
Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC| 2000
- 501
-
High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials| 2000
- 505
-
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density| 2000
- 509
-
Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation| 2000
- 513
-
Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals| 2000
- 517
-
Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples| 2000
- 517
-
Deformation Tests on 4H-SiC Single Crystals between 900^oC and 1360^oC and the Microstructure of the Deformed SamplesDemenet, J. L. / Hong, M.-H. / Pirouz, P. et al. | 2000
- 521
-
Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface| 2000
- 525
-
Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX| 2000
- 529
-
Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System| 2000
- 533
-
Illusion of New Polytypes| 2000
- 537
-
Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC| 2000
- 541
-
Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications| 2000
- 545
-
Theory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, how SiC got its Colors| 2000
- 551
-
Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC| 2000
- 555
-
Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection| 2000
- 559
-
Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations| 2000
- 563
-
Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance| 2000
- 567
-
Differential Absorption Measurement of Valence Band Splittings in 4H SiC| 2000
- 571
-
Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry| 2000
- 575
-
Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry| 2000
- 579
-
Isotope Effects on the Raman Spectrum of SiC| 2000
- 583
-
Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC| 2000
- 587
-
Selectively Resonant Raman Spectra of Folded Phonon Modes in SiC| 2000
- 591
-
Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-resonant Condition| 2000
- 595
-
Raman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on Si| 2000
- 599
-
Characterization of 3C-SiC/SOI Deposited with HMDS| 2000
- 603
-
Raman Imaging Characterization of Electric Properties of SiC Near a Micropipe| 2000
- 607
-
Carrier Density Evaluation in P-Type SiC by Raman Scattering| 2000
- 611
-
Shallow Nitrogen Donor States in 4H-SiC Investigated by Photothermal Ionization Spectroscopy| 2000
- 615
-
Characterization of Silicon Carbide using Raman Spectroscopy| 2000
- 619
-
Photoluminescence Study of CVD Layers Highly Doped with Nitrogen| 2000
- 623
-
Low Temperature Photoluminescence of 13C Enriched SiC-Crystals Grown by the Modified Lely Method| 2000
- 627
-
Sub-μm Scale Photoluminescence Image of SiC and GaN at a Low Temperature| 2000
- 627
-
Sub-mum Scale Photoluminescence Image of SiC and GaN at a Low TemperatureYoshimoto, M. / Goto, M. / Saraie, J. / Kimoto, T. / Matsunami, H. et al. | 2000
- 631
-
Vanadium-related Center in 4H Silicon Carbide| 2000
- 635
-
Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC| 2000
- 639
-
Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC| 2000
- 643
-
Electronic States of Vacancies in 3C- and 4H-SiC| 2000
- 647
-
Pseudo-Donors in SiC| 2000
- 651
-
Metastability of a Hydrogen-related Defect in 6H-SiC| 2000
- 655
-
Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC| 2000
- 659
-
Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC| 2000
- 663
-
Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC| 2000
- 667
-
Ion Beam Induced Change in the Linear Optical Properties of SiC| 2000
- 671
-
Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence| 2000
- 675
-
Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC| 2000
- 679
-
Optical Lifetime Measurements in 4H SiC| 2000
- 683
-
Optical Characterization of 4H-SiC p+n-n+ Structures Applying Time- and Spectrally Resolved Emission Microscopy| 2000
- 687
-
Electroluminescence From Implanted and Epitaxially Grown pn-Diodes| 2000
- 691
-
Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes| 2000
- 695
-
Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs| 2000
- 699
-
Non-Contact Photovoltage Measurements in SiC| 2000
- 703
-
Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide| 2000
- 707
-
MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC| 2000
- 711
-
Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6| 2000
- 715
-
Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)| 2000
- 719
-
Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier Concentrations| 2000
- 725
-
A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H–and 6H–SiC| 2000
- 729
-
Theoretical Calculation of the Electron Hall Mobility in n-Type 4H– and 6H-SiC| 2000
- 733
-
Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation| 2000
- 737
-
Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs| 2000
- 741
-
Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC| 2000
- 745
-
Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC| 2000
- 749
-
On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC| 2000
- 753
-
Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC| 2000
- 757
-
Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy| 2000
- 761
-
Improved Measurements of High-Field Drift Velocity in Silicon Carbide| 2000
- 765
-
A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC| 2000
- 769
-
Electron Saturated Vertical Velocities in Silicon Carbide Polytypes| 2000
- 773
-
High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiC| 2000
- 777
-
Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes| 2000
- 781
-
Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes| 2000
- 785
-
Donors and Acceptors in SiC-Studies with EPR and ENDOR| 2000
- 791
-
ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States| 2000
- 795
-
Dopant-related Complexes in SiC| 2000
- 799
-
The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC| 2000
- 805
-
The Electronic Structure of the Be Acceptor Centers in 6H-SiC| 2000
- 809
-
Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide| 2000
- 813
-
ESR Study of Delamination in H+ Implanted Silicon Carbide| 2000
- 817
-
Vacancies and their Complexes with H in SiC| 2000
- 821
-
The Carbon Vacancy Pair in 4H and 6H SiC| 2000
- 825
-
Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide| 2000
- 831
-
Physics of SiC Processing| 2000
- 837
-
Polishing and Surface Characterization of SiC Substrates| 2000
- 841
-
Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering| 2000
- 845
-
Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers| 2000
- 849
-
Nuclear Transmutation Doping of Phosphorus into 6H-SiC| 2000
- 853
-
Radiation Defects and Doping of SiC with Phosphorus by Nuclear Transmutation Doping (NTD)Heissenstein, H. / Sadowski, H. / Peppermuller, C. / Helbig, R. et al. | 2000
- 853
-
Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD)| 2000
- 857
-
Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions| 2000
- 861
-
Hot-Implantation of Phosphorus Ions into 4H-SiC| 2000
- 865
-
Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature| 2000
- 869
-
Damage Evolution in Al-implanted 4H SiC| 2000
- 873
-
Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide| 2000
- 877
-
High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing| 2000
- 881
-
Consequences of High-Dose, High Temperature Al+ Implantation in 6H-SiC| 2000
- 885
-
Al and Al/C High Dose Implantation in 4H-SiC| 2000
- 889
-
Channeled Implants in 6H Silicon Carbide| 2000
- 893
-
Damage Reduction in Channeled Ion Implanted 6H-SiC| 2000
- 897
-
Ion Beam Induced Nanocrystallization of SiC| 2000
- 901
-
High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching| 2000
- 905
-
Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC| 2000
- 909
-
Electrical and Structural Properties of Al and B Implanted 4H-SiC| 2000
- 913
-
Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC| 2000
- 917
-
Coimplantation Effects of (C and Si)/Ga in 6H-SiC| 2000
- 921
-
Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation| 2000
- 925
-
Characteristics of n-p Junction Diodes made by Double-Implantations into SiC| 2000
- 929
-
Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC| 2000
- 933
-
Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen| 2000
- 937
-
Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC| 2000
- 941
-
Transient-Enhanced Diffusion of Boron in SiC| 2000
- 945
-
Selective Doping of 6H-SiC by Diffusion of Boron| 2000
- 949
-
Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion| 2000
- 953
-
Beryllium Implantation Doping of Silicon Carbide| 2000
- 957
-
Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide| 2000
- 961
-
Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing| 2000
- 965
-
Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing| 2000
- 969
-
Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques| 2000
- 973
-
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation| 2000
- 977
-
Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation| 2000
- 981
-
Study of Contact Formation by High Temperature Deposition of Ni on SiC| 2000
- 985
-
Ohmic Contact Formation on n-Type 6H-SiC using NiSi2| 2000
- 989
-
Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N2 Gas, and Application to a UV Sensor| 2000
- 993
-
Adhesion and Microstructure of Ni Contacts to 3C-SiC| 2000
- 997
-
Low Resistance Ohmic Contacts to n-SiC Using Niobium| 2000
- 1001
-
A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures| 2000
- 1005
-
Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing| 2000
- 1009
-
Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices| 2000
- 1013
-
Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC| 2000
- 1017
-
Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions| 2000
- 1021
-
Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC| 2000
- 1025
-
A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation| 2000
- 1029
-
Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC| 2000