Suppressed surface‐recombination structure and surface passivation for improving current gain of 4H‐SiC BJTs (English)
- New search for: Nonaka, Kenichi
- New search for: Horiuchi, Akihiko
- New search for: Negoro, Yuki
- New search for: Iwanaga, Kensuke
- New search for: Yokoyama, Seiichi
- New search for: Hashimoto, Hideki
- New search for: Sato, Masashi
- New search for: Maeyama, Yusuke
- New search for: Shimizu, Masaaki
- New search for: Iwakuro, Hiroaki
- New search for: Nonaka, Kenichi
- New search for: Horiuchi, Akihiko
- New search for: Negoro, Yuki
- New search for: Iwanaga, Kensuke
- New search for: Yokoyama, Seiichi
- New search for: Hashimoto, Hideki
- New search for: Sato, Masashi
- New search for: Maeyama, Yusuke
- New search for: Shimizu, Masaaki
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In:
physica status solidi (a)
;
206
, 10
;
2457-2467
;
2009
- Article (Journal) / Electronic Resource
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Title:Suppressed surface‐recombination structure and surface passivation for improving current gain of 4H‐SiC BJTs
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Contributors:Nonaka, Kenichi ( author ) / Horiuchi, Akihiko ( author ) / Negoro, Yuki ( author ) / Iwanaga, Kensuke ( author ) / Yokoyama, Seiichi ( author ) / Hashimoto, Hideki ( author ) / Sato, Masashi ( author ) / Maeyama, Yusuke ( author ) / Shimizu, Masaaki ( author ) / Iwakuro, Hiroaki ( author )
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Published in:physica status solidi (a) ; 206, 10 ; 2457-2467
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Publisher:
- New search for: WILEY‐VCH Verlag
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Publication date:2009-10-01
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Size:11 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 206, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2213
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Contents: (Phys. Status Solidi A 10/2009)| 2009
- 2217
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Modeling the effects of molecule distortion on the Kondo resonance in the conductance of CoPc/Au(111) and TBrPP‐Co/Cu(111)Aguiar‐Hualde, J. M. / Chiappe, G. / Louis, E. / Anda, E. V. / Simonin, J. et al. | 2009
- 2228
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Pressure‐induced structural transitions in multi‐walled carbon nanotubesShima, Hiroyuki / Sato, Motohiro et al. | 2009
- 2234
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Influence of magnetic anisotropy and dipolar interactions on magnetocaloric effect in nanostructured materialsPrida, Victor M. / Vega, Victor / Serantes, David / Baldomir, Daniel / Ilyn, Maxim / Zhukov, Arcady P. / González, Julián / Hernando, Blanca et al. | 2009
- 2240
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Nano‐lightsticks: polymer nanotubes with embedded chemiluminescent dopantsLovera, Pierre / Reynolds, Kenneth / Redmond, Gareth et al. | 2009
- 2245
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Charge transport property of one‐dimensional gold–polyaniline composite networksMallick, Kaushik / Witcomb, Michael J. / Strydom, Andre M. et al. | 2009
- 2249
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Sol–gel transparent nano‐glass‐ceramics comprising rare‐earth‐doped NaYF4 nanocrystalsSantana‐Alonso, A. / Yanes, A. C. / Méndez‐Ramos, J. / del‐Castillo, J. / Rodríguez, V. D. et al. | 2009
- 2257
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Identification and carrier dynamics of the dominant lifetime limiting defect in n– 4H‐SiC epitaxial layersKlein, P. B. et al. | 2009
- 2273
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Optical beam induced current measurements: principles and applications to SiC device characterizationRaynaud, Christophe / Nguyen, Duy‐Minh / Dheilly, Nicolas / Tournier, Dominique / Brosselard, Pierre / Lazar, Mihai / Planson, Dominique et al. | 2009
- 2284
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Measurements of impact ionization coefficients of electrons and holes in 4H‐SiC and their application to device simulationHatakeyama, Tetsuo et al. | 2009
- 2295
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Reliability aspects of SiC Schottky diodesHolz, Matthias / Hilsenbeck, Jochen / Rupp, Roland et al. | 2009
- 2308
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Design, process, and performance of all‐epitaxial normally‐off SiC JFETsMalhan, Rajesh K. / Bakowski, Mietek / Takeuchi, Yuuichi / Sugiyama, Naohiro / Schöner, Adolf et al. | 2009
- 2329
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Extreme temperature 6H‐SiC JFET integrated circuit technologyNeudeck, Philip G. / Garverick, Steven L. / Spry, David J. / Chen, Liang‐Yu / Beheim, Glenn M. / Krasowski, Michael J. / Mehregany, Mehran et al. | 2009
- 2346
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1200 V SiC vertical‐channel‐JFETs and cascode switchesVeliadis, Victor et al. | 2009
- 2363
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High electron mobility achieved in n‐channel 4H‐SiC MOSFETs oxidized in the presence of nitrogenZippelius, B. / Beljakowa, S. / Krieger, M. / Pensl, G. / Reshanov, S. A. / Noborio, M. / Kimoto, T. / Afanas'ev, V. V. et al. | 2009
- 2374
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4H‐SiC MISFETs with nitrogen‐containing insulatorsNoborio, Masato / Suda, Jun / Beljakowa, Svetlana / Krieger, Michael / Kimoto, Tsunenobu et al. | 2009
- 2391
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Inversion layer electron transport in 4H‐SiC metal–oxide–semiconductor field‐effect transistorsTilak, Vinayak et al. | 2009
- 2403
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Development of SiC diodes, power MOSFETs and intelligent power modulesNakamura, Takashi / Miura, Mineo / Kawamoto, Noriaki / Nakano, Yuki / Otsuka, Takukazu / Oku‐mura, Keiji / Kamisawa, Akira et al. | 2009
- 2417
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Reliability issues of SiC power MOSFETs toward high junction temperature operationTanimoto, Satoshi / Ohashi, Hiromichi et al. | 2009
- 2431
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Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOsZhang, Qingchun (Jon) / Agarwal, Anant K. et al. | 2009
- 2457
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Suppressed surface‐recombination structure and surface passivation for improving current gain of 4H‐SiC BJTsNonaka, Kenichi / Horiuchi, Akihiko / Negoro, Yuki / Iwanaga, Kensuke / Yokoyama, Seiichi / Hashimoto, Hideki / Sato, Masashi / Maeyama, Yusuke / Shimizu, Masaaki / Iwakuro, Hiroaki et al. | 2009
- 2468
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SiC avalanche photodiodes and photomultipliers for ultraviolet and solar‐blind light detectionVert, Alexey / Soloviev, Stanislav / Sandvik, Peter et al. | 2009
- 2478
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Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETsChow, T. Paul / Naik, H. / Li, Z. et al. | 2009
- 2487
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Phys. Status Solidi A 206/10| 2009
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Back Cover (Phys. Status Solidi A 10/2009)| 2009
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Front Cover (Phys. Status Solidi A 10/2009)Aguiar‐Hualde, J. M. / Chiappe, G. / Louis, E. / Anda, E. V. / Simonin, J. et al. | 2009