Pressure and composition dependence of the electron effective mass in GaAs1–xNx (English)
- New search for: Gorczyca, I.
- New search for: Christensen, N. E.
- New search for: Svane, A.
- New search for: Gorczyca, I.
- New search for: Christensen, N. E.
- New search for: Svane, A.
In:
physica status solidi (b)
;
243
, 7
;
1599-1603
;
2006
- Article (Journal) / Electronic Resource
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Title:Pressure and composition dependence of the electron effective mass in GaAs1–xNx
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Contributors:
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Published in:physica status solidi (b) ; 243, 7 ; 1599-1603
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Publisher:
- New search for: WILEY‐VCH Verlag
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Publication date:2006-06-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 243, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1403
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Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X‐ray microdiffractionDrakopoulos, M. / Laügt, M. / Riemann, T. / Beaumont, B. / Gibart, P. et al. | 2006
- 1411
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MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layerKuboya, S. / Nakajima, F. / Katayama, R. / Onabe, K. et al. | 2006
- 1416
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N‐plasma assisted MBE grown GaN films on Si(111)Gangopadhyay, Subhashis / Schmidt, Thomas / Falta, Jens et al. | 2006
- 1421
-
New semiconductor alloy GaNAsBi with temperature‐insensitive bandgapYoshimoto, Masahiro / Huang, Wei / Feng, Gan / Oe, Kunishige et al. | 2006
- 1426
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Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layersMalinauskas, T. / Jarašiūnas, K. / Aleksiejunas, R. / Gogova, D. / Monemar, B. / Beaumont, B. / Gibart, P. et al. | 2006
- 1431
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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3Kumagai, Y. / Takemoto, K. / Kikuchi, J. / Hasegawa, T. / Murakami, H. / Koukitu, A. et al. | 2006
- 1436
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Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealingTuomisto, F. / Hautakangas, S. / Makkonen, I. / Ranki, V. / Puska, M. J. / Saarinen, K. / Bockowski, M. / Suski, T. / Paskova, T. / Monemar, B. et al. | 2006
- 1441
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Optical polarization anisotropy in strained A‐plane GaN films on R‐plane sapphireGhosh, Sandip / Misra, Pranob / Grahn, Holger T. / Imer, Bilge / Nakamura, Shuji / DenBaars, Steven P. / Speck, James S. et al. | 2006
- 1446
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N‐polarity GaN on sapphire substrate grown by MOVPEMatsuoka, Takashi / Kobayashi, Yasuyuki / Takahata, Hiroko / Mitate, Toshitugu / Mizuno, Seiichiro / Sasaki, Atsushi / Yoshimoto, Mamoru / Ohnishi, Tuyoshi / Sumiya, Masatomo et al. | 2006
- 1451
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RF‐MBE growth and structural characterization of cubic InN films on GaAsNakamura, T. / Iida, K. / Katayama, R. / Yamamoto, T. / Onabe, K. et al. | 2006
- 1456
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Temperature‐dependent growth and characterization of N‐polar InN films by molecular beam epitaxyWang, Xinqiang / Che, Song‐Bek / Ishitani, Yoshihiro / Yoshikawa, Akihiko et al. | 2006
- 1461
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Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma‐assisted molecular beam epitaxyWang, K. R. / Tu, L. W. / Lin, S. J. / Chen, Y. L. / Jiang, Z. W. / Chen, M. / Hsiao, C. L. / Cheng, K. H. / Yeh, J. W. / Chen, S. K. et al. | 2006
- 1468
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A‐plane (11$ \bar 2 $0) InN growth on nitridated R‐plane (10$ \bar 1 $2) sapphire by ECR‐MBEKumagai, Y. / Tsuyuguchi, A. / Naoi, H. / Araki, T. / Na, H. / Nanishi, Y. et al. | 2006
- 1468
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A-plane (11UEQN LOC="INLINE" NOTAT="TEX"> \bar 2 0) InN growth on nitridated R-plane (10UEQN LOC="INLINE" NOTAT="TEX"> \bar 1 2) sapphire by ECR-MBEKumagai, Y. et al. | 2006
- 1468
-
A-plane (1120) InN growth on nitridated R-plane (1012) sapphire by ECR-MBEKumagai, Y. / Tsuyuguchi, A. / Naoi, H. / Araki, T. / Na, H. / Nanishi, Y. et al. | 2006
- 1472
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Undoped and rare‐earth doped GaN quantum dots on AlGaNHori, Yuji / Andreev, Thomas / Florian, Thomas / Bellet‐Amalric, Edith / Le Si Dang, Daniel / Tanaka, Mitsuhiro / Oda, Osamu / Daudin, Bruno et al. | 2006
- 1476
-
Growth of AlN nanowires by metal organic chemical vapour depositionCimalla, V. / Foerster, Ch. / Cengher, D. / Tonisch, K. / Ambacher, O. et al. | 2006
- 1481
-
Growth of high‐In‐content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma‐assisted molecular‐beam epitaxyKouno, Tetsuya / Kikuchi, Akihiko / Kishino, Katsumi et al. | 2006
- 1486
-
Low density GaN quantum dots on AlGaNPakuła, K. / Bożek, R. / Surowiecka, K. / Stępniewski, R. / Wysmolek, A. / Baranowski, J. M. et al. | 2006
- 1490
-
Epitaxial growth and characterization of InN nanorods and compact layers on silicon substratesSánchez‐García, M. A. / Grandal, J. / Calleja, E. / Lazic, S. / Calleja, J. M. / Trampert, A. et al. | 2006
- 1494
-
Resonant Raman scattering in InGaN alloysDavydov, V. Yu. / Klochikhin, A. A. / Goncharuk, I. N. / Smirnov, A. N. / Sakharov, A. V. / Skvortsov, A. P. / Yagovkina, M. A. / Lebedev, V. M. / Lu, Hai / Schaff, William J. et al. | 2006
- 1499
-
Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown on a‐plane 6H‐SiCCros, A. / Budagosky, J. A. / García‐Cristóbal, A. / Garro, N. / Cantarero, A. / Founta, S. / Mariette, H. / Daudin, B. et al. | 2006
- 1508
-
Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffractionBarabash, R. I. / Ice, G. E. / Liu, W. / Roder, C. / Figge, S. / Einfeldt, S. / Hommel, D. / Katona, T. M. / Speck, J. S. / DenBaars, S. P. et al. | 2006
- 1514
-
Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxyUeta, A. / Akahane, K. / Gozu, S. / Yamamoto, N. / Ohtani, N. et al. | 2006
- 1519
-
In situ and ex situ grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dotsCoraux, J. / Renevier, H. / Proietti, M. G. / Favre‐Nicolin, V. / Daudin, B. / Renaud, G. et al. | 2006
- 1524
-
X‐ray diffraction reciprocal lattice space mapping of a‐plane AlGaN on GaNTsuda, Michinobu / Furukawa, Hiroko / Honshio, Akira / Iwaya, Motoaki / Kamiyama, Satoshi / Amano, Hiroshi / Akasaki, Isamu et al. | 2006
- 1529
-
Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3substratesDanilchenko, B. A. / Zelensky, S. E. / Drok, E. / Vitusevich, S. A. / Danylyuk, S. V. / Klein, N. / Lüth, H. / Belyaev, A. E. / Kochelap, V. A. et al. | 2006
- 1533
-
Relaxation in crack‐free AlN/GaN superlatticesKröger, R. / Kruse, C. / Roder, C. / Hommel, D. / Rosenauer, A. et al. | 2006
- 1537
-
Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experimentsDmowski, L. H. / Dybko, K. / Plesiewicz, J. / Suski, T. / Lu, H. / Schaff, W. / Kurouchi, M. / Nanishi, Y. / Konczewicz, L. / Cimalla, V. et al. | 2006
- 1541
-
Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaNWójtowicz, T. / Gloux, F. / Ruterana, P. / Nouet, G. / Bodiou, L. / Braud, A. / Lorenz, K. / Alves, E. et al. | 2006
- 1551
-
Electric fields in AlGaN/GaN quantum well structuresMcAleese, C. / Costa, P. M. F. J. / Graham, D. M. / Xiu, H. / Barnard, J. S. / Kappers, M. J. / Dawson, P. / Godfrey, M. J. / Humphreys, C. J. et al. | 2006
- 1560
-
Degenerate four‐wave mixing spectroscopy of GaN films on various substratesIshiguro, T. / Toda, Y. / Adachi, S. / Mukai, T. / Hoshino, K. / Arakawa, Y. et al. | 2006
- 1564
-
Transient pump–probe measurements for polarized excitons in strained GaN epitaxial layersIshiguro, T. / Toda, Y. / Adachi, S. / Arita, M. / Arakawa, Y. et al. | 2006
- 1568
-
Four‐wave mixing measurements of biexcitons in uniaxially‐strained GaN filmsAdachi, Satoru / Toda, Yasunori / Ishiguro, Tetsuro et al. | 2006
- 1572
-
Transition energies and Stokes shift analysis for In‐rich InGaN alloysSchley, P. / Goldhahn, R. / Winzer, A. T. / Gobsch, G. / Cimalla, V. / Ambacher, O. / Rakel, M. / Cobet, C. / Esser, N. / Lu, H. et al. | 2006
- 1577
-
Meta‐GGA calculation of the electronic structure of group III–V nitridesLitimein, F. / Bouhafs, B. / Nouet, G. / Ruterana, P. et al. | 2006
- 1583
-
Generalized Wannier functions: An efficient way to construct ab‐initio tight‐binding parameters for group‐III nitridesWahn, M. / Neugebauer, J. et al. | 2006
- 1588
-
Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxyArvanitidis, J. / Katsikini, M. / Ves, S. / Delimitis, A. / Kehagias, Th. / Komninou, Ph. / Dimakis, E. / Iliopoulos, E. / Georgakilas, A. et al. | 2006
- 1594
-
Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a‐plane GaNDarakchieva, V. / Paskova, T. / Paskov, P. P. / Arwin, H. / Schubert, M. / Monemar, B. / Figge, S. / Hommel, D. / Haskell, B. A. / Fini, P. T. et al. | 2006
- 1599
-
Pressure and composition dependence of the electron effective mass in GaAs1–xNxGorczyca, I. / Christensen, N. E. / Svane, A. et al. | 2006
- 1604
-
The dominant shallow 0.225 eV acceptor in GaNMonemar, B. / Paskov, P. P. / Bergman, J. P. / Paskova, T. / Figge, S. / Dennemarck, J. / Hommel, D. et al. | 2006
- 1609
-
Investigating the electrical properties of Si donors in AlxGa1–xN alloysJames, G. R. / Omnès, F. / Leitch, A. W. R. et al. | 2006
- 1614
-
Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substratesŽukauskas, A. / Kazlauskas, K. / Tamulaitis, G. / Pobedinskas, P. / Juršėnas, S. / Miasojedovas, S. / Ivanov, V. Yu. / Godlewski, M. / Skierbiszewski, C. / Siekacz, M. et al. | 2006
- 1619
-
Spatially resolved cathodoluminescence, photoluminescence, electroluminescence, and reflectance study of GaInN quantum wells on non‐(0001) GaN facetsFeneberg, M. / Schirra, M. / Neubert, B. / Brückner, P. / Scholz, F. / Sauer, R. / Thonke, K. et al. | 2006
- 1625
-
Analytical model for the quantum‐confined Stark effect including electric field screening by non‐equilibrium carriersBulashevich, K. A. / Karpov, S. Yu. / Suris, R. A. et al. | 2006
- 1630
-
Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wellsTchernycheva, M. / Nevou, L. / Doyennette, L. / Julien, F. H. / Guillot, F. / Monroy, E. / Remmele, T. / Albrecht, M. et al. | 2006
- 1634
-
Raman study of N bonding in AlGaAs/InGaAsN multiquantum wellsLazić, S. / Calleja, J. M. / Hey, R. / Ploog, K. et al. | 2006
- 1639
-
Strong light–matter coupling in GaN microcavities grown on silicon(111) at room temperatureSellers, I. R. / Semond, F. / Leroux, M. / Massies, J. / Henneghien, A‐L. / Disseix, P. / Leymarie, J. / Vasson, A. et al. | 2006
- 1643
-
Fast spin relaxation in InGaN/GaN multiple quantum wellsBrown, J. / Wells, J.‐P. R. / Hashemizadeh, S. A. / Parbrook, P. J. / Wang, T. / Fox, A. M. / Mowbray, D. J. / Skolnick, M. S. et al. | 2006
- 1647
-
Reflectance and photoluminescence studies of InGaN/GaN multiple‐quantum‐well structures embedded in an asymmetric microcavityLin, D. Y. / Shiu, J. J. / Lin, C. F. et al. | 2006
- 1652
-
Optical properties of single non‐polar GaN quantum dotsRol, F. / Gayral, B. / Founta, S. / Daudin, B. / Eymery, J. / Gérard, J.‐M. / Mariette, H. / Dang, Le Si / Peyrade, D. et al. | 2006
- 1657
-
Growth and optical characterization of InAsN quantum dotsTsurusawa, H. / Nishikawa, A. / Katayama, R. / Onabe, K. et al. | 2006
- 1661
-
Micro‐photoluminescence studies of InGaN/GaN quantum dots up to 150 KSebald, K. / Lohmeyer, H. / Gutowski, J. / Yamaguchi, T. / Hommel, D. et al. | 2006
- 1665
-
The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPENarita, Tetsuo / Honda, Yoshio / Yamaguchi, Masahito / Sawaki, Nobuhiko et al. | 2006
- 1669
-
GaN/AlGaN superlattices for optoelectronics in the mid‐infraredGuillot, F. / Monroy, E. / Gayral, B. / Bellet‐Amalric, E. / Jalabert, D. / Gérard, J.‐M. / Dang, Le Si / Tchernycheva, M. / Julien, F. H. / Monnoye, S. et al. | 2006
- 1674
-
Resonant Raman characterization of InAlGaN/GaN heterostructuresCros, A. / Cantarero, A. / Pelekanos, N. T. / Georgakilas, A. / Pomeroy, J. / Kuball, M. et al. | 2006
- 1679
-
Superconductivity of InN with a well defined Fermi surfaceInushima, T. / Kato, N. / Maude, D. K. / Lu, Hai / Schaff, W. J. / Tauk, R. / Meziani, Y. / Ruffenack, S. / Briot, O. / Knap, W. et al. | 2006
- 1687
-
Site selectivity of Fe3+Ga and the formation of Fe3+Ga–Gai pairs in GaNGehlhoff, W. / Azamat, D. / Hoffmann, A. et al. | 2006
- 1692
-
X‐ray absorption near edge spectroscopy at the Mn K‐edge in highly homogeneous GaMnN diluted magnetic semiconductorsSancho‐Juan, O. / Cantarero, A. / Martínez‐Criado, G. / Olguín, D. / Garro, N. / Cros, A. / Salomé, M. / Susini, J. / Dhar, S. / Ploog, K. et al. | 2006
- 1696
-
Photoemission and X‐ray absorption studies of the electronic structure of GaN‐based diluted magnetic semiconductorsHwang, J. I. / Ishida, Y. / Kobayashi, M. / Osafune, Y. / Mizokawa, T. / Fujimori, A. / Takeda, Y. / Terai, K. / Fujimori, S‐I. / Saitoh, Y. et al. | 2006
- 1701
-
Doping of GaN with Fe and Mg for spintronics applicationsBonanni, Alberta / Simbrunner, Clemens / Wegscheider, Matthias / Przybylinska, Hanka / Wolos, Agnieszka / Sitter, Helmut / Jantsch, Wolfgang et al. | 2006
- 1706
-
Quantum transport in high mobility AlGaN/GaN 2DEGs and nanostructuresSchmult, S. / Manfra, M. J. / Sergent, A. M. / Punnoose, A. / Chou, H. T. / Goldhaber‐Gordon, D. / Molnar, R. J. et al. | 2006
- 1713
-
The performance of AlGaN solar blind UV photodetectors: responsivity and decay timeCherkashinin, G. / Lebedev, V. / Wagner, R. / Cimalla, I. / Ambacher, O. et al. | 2006