Advances in photoreflectance characterisation of photonic (resonant‐cavity) and transistor epiwafers (English)
- New search for: Murtagh, M. E.
- New search for: Ward, S.
- New search for: Kelly, P. V.
- New search for: Murtagh, M. E.
- New search for: Ward, S.
- New search for: Kelly, P. V.
In:
physica status solidi (a)
;
202
, 4
;
516-523
;
2005
- Article (Journal) / Electronic Resource
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Title:Advances in photoreflectance characterisation of photonic (resonant‐cavity) and transistor epiwafers
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Contributors:
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Published in:physica status solidi (a) ; 202, 4 ; 516-523
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Publisher:
- New search for: WILEY‐VCH Verlag
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Publication date:2005-03-01
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Size:9 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 202, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 495
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Processing of novel SiC and group III‐nitride based micro‐ and nanomechanical devicesFoerster, Ch. / Cimalla, V. / Brueckner, K. / Lebedev, V. / Stephan, R. / Hein, M. / Ambacher, O. et al. | 2005
- 501
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Epitaxial Lift‐Off for large area thin film III/V devicesSchermer, J. J. / Mulder, P. / Bauhuis, G. J. / Voncken, M. M. A. J. / van Deelen, J. / Haverkamp, E. / Larsen, P. K. et al. | 2005
- 509
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III–V layer transfer onto silicon and applicationsDi Cioccio, L. / Jalaguier, E. / Letertre, F. et al. | 2005
- 516
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Advances in photoreflectance characterisation of photonic (resonant‐cavity) and transistor epiwafersMurtagh, M. E. / Ward, S. / Kelly, P. V. et al. | 2005
- 524
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Control of 3C–SiC/Si wafer bending by the “checker‐board” carbonization methodChassagne, T. / Ferro, G. / Haas, H. / Mank, H. / Leycuras, A. / Monteil, Y. / Soares, F. / Balloud, C. / Arcade, Ph. / Blanc, C. et al. | 2005
- 531
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Growth and characterization of bulk AlN substrates grown by PVTBickermann, M. / Epelbaum, B. M. / Kazan, M. / Herro, Z. / Masri, P. / Winnacker, A. et al. | 2005
- 536
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Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPEBougrioua, Z. / Azize, M. / Lorenzini, P. / Laügt, M. / Haas, H. et al. | 2005
- 545
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Ion beam synthesis of 3C–(Si1–xC1–y)Gex+y solid solutionsWeih, P. / Stauden, Th. / Ecke, G. / Shokhovets, S. / Zgheib, Ch. / Voelskow, M. / Skorupa, W. / Ambacher, O. / Pezoldt, J. et al. | 2005
- 550
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Control of Al‐doping in 4H–SiC homo‐epitaxial layers grown with a HMDS/TMA/P mixtureSartel, C. / Soulière, V. / Zielinski, M. / Monteil, Y. / Camassel, J. / Smith, L. / Rushworth, S. et al. | 2005
- 555
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Investigation of copper doped InP single crystals grown by Czochralski technique for use in X‐ray detectionZdansky, K. / Zavadil, J. / Pekarek, L. / Gorodynskyy, V. / Kozak, H. et al. | 2005
- 561
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Defect morphology and strain of CVD grown 3C–SiC layers: effect of the carbonization processMéndez, D. / Aouni, A. / Morales, F. M. / Pacheco, F. J. / Araújo, D. / Bustarret, E. / Ferro, G. / Monteil, Y. et al. | 2005
- 566
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Characterization of differently grown GaN epilayers by time‐resolved four‐wave mixing techniqueJarašiūnas, K. / Malinauskas, T. / Aleksiejūnas, R. / Sūdžius, M. / Frayssinet, E. / Beaumont, B. / Faurie, J.‐P. / Gibart, P. et al. | 2005
- 572
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Characterization of deep levels in n‐GaN by combined capacitance transient techniquesPy, M. A. / Zellweger, Ch. / Wagner, V. / Carlin, J.‐F. / Buehlmann, H.‐J. / Ilegems, M. et al. | 2005
- 578
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Defect‐selective etching of SiCWeyher, J. L. / Lazar, S. / Borysiuk, J. / Pernot, J. et al. | 2005
- 584
-
Sensitivity and measurement errors of Makyoh topographyRiesz, F. / Lukács, I. E. et al. | 2005
- 590
-
Terahertz investigation of high quality indium nitride epitaxial layersMeziani, Y. M. / Maleyre, B. / Sadowski, M. L. / Ruffenach, S. / Briot, O. / Knap, W. et al. | 2005
- 593
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Control of epitaxial layers grown on 4H–SiC: from 3C microcrystalline inclusions to type II quantum well structuresJuillaguet, S. / Balloud, C. / Soulière, V. / Sartel, C. / Camassel, J. / Y. Monteil et al. | 2005
- 598
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Optical mapping of aluminum doped p‐type SiC wafersWellmann, P. J. / Straubinger, T. / Künecke, U. / Müller, R. / Sakwe, S. A. / Pons, M. / Thuaire, A. / Crisci, A. / Mermoux, M. / Auvray, L. et al. | 2005
- 602
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Electron transport properties of AlGaAs/GaAs heterostructure containing a d‐doping in the quantum wellRekaya, S. / Bouzaïene, L. / Sfaxi, L. / Hjiri, M. / Contreras, S. / Robert, J. L. / Maaref, H. et al. | 2005
- 609
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Free energy and capture cross section of the E2 trap in n‐type GaNPernot, J. / Ulzhöfer, C. / Muret, P. / Beaumont, B. / Gibart, P. et al. | 2005
- 614
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Donor ionization energy in bulk GaAs for different donor concentrations and magnetic fieldsBisotto, I. / Jouault, B. / Raymond, A. / Zawadzki, W. / Strasser, G. et al. | 2005
- 619
-
Magnetic field effects on the near field spectra of quantum dotsZora, Anna / Simserides, Constantinos / Triberis, Georgios et al. | 2005
- 625
-
Cathodoluminescence degradation signatures of AlGaAs‐based high‐power laser arraysPommiès, M. / Avella, M. / Cánovas, E. / Jiménez, J. / Oudart, M. / Resneau, P. / Nagle, J. et al. | 2005
- 631
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Vertical Cavity Surface Emitting Laser sources for gas detectionCerutti, L. / Garnache, A. / Ouvrard, A. / Garcia, M. / Genty, F. et al. | 2005
- 636
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Defect tuning of GaAs doping superlattices by hydrogen ion implantationBrink, D. J. / Haile, K. M. / Kunert, H. W. et al. | 2005
- 642
-
Enhancement of localization and confinement effects in quaternary group‐III nitride multi‐quantum wells on SiC substrateAnceau, S. / Lefebvre, P. / Suski, T. / Konczewicz, L. / Hirayama, H. / Aoyagi, Y. et al. | 2005
- 647
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Optimization of InAsSb photodetector for non‐cryogenic operation in the mid‐infrared rangeAït‐Kaci, H. / Nieto, J. / Rodriguez, J. B. / Grech, P. / Chevrier, F. / Salesse, A. / Joullié, A. / Christol, P. et al. | 2005
- 652
-
Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1–xN quantum well structureCoquillat, D. / Torres, J. / Le Vassor d'Yerville, M. / Legros, R. / Lascaray, J. P. / Liu, C. / Watson, I. M. / Martin, R. W. / Chong, H. M. H. / De La Rue, R. M. et al. | 2005
- 656
-
Terahertz generation by plasma waves in nanometer gate high electron mobility transistorsŁusakowski, J. / Teppe, F. / Dyakonova, N. / Meziani, Y. M. / Knap, W. / Parenty, T. / Bollaert, S. / Cappy, A. / Popov, V. / Shur, M. S. et al. | 2005
- 660
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Forward‐bias degradation in 4H–SiC p+nn+ diodes: Influence of the mesa etchingCamara, N. / Thuaire, A. / Bano, E. / Zekentes, K. et al. | 2005
- 665
-
Assessment of layer composition and thickness in AlGaN/GaN HEMT structures by spectroscopic ellipsometryBaeumler, M. / Müller, S. / Köhler, K. / Wagner, J. et al. | 2005
- 677
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High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistorsDyakonova, N. / Rumyantsev, S. L. / Shur, M. S. / Meziani, Y. / Pascal, F. / Hoffmann, A. / Fareed, Q. / Hu, X. / Bilenko, Yu. / Gaska, R. et al. | 2005
- 680
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Technical aspects of 〈$ \bf 11\bar 20 $〉 4H–SiC MOSFET processingBlanc, C. / Tournier, D. / Soulière, V. / Juillaguet, S. / Contreras, S. / Zielinski, M. / Godignon, P. / Monteil, Y. / Camassel, Jean et al. | 2005
- 686
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Simulation analysis of dynamical properties of Cl2 on GaAs(001)Ozeki, M. / Shimizu, Y. et al. | 2005
- 692
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Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H–SiC after high temperature treatmentsPérez, R. / Mestres, N. / Montserrat, J. / Tournier, D. / Godignon, P. et al. | 2005
- 698
-
Full wafer size investigation of N+ and P+ co‐implanted layers in 4H–SiCBlanqué, S. / Lyonnet, J. / Pérez, R. / Terziyska, P. / Contreras, S. / Godignon, P. / Mestres, N. / Pascual, J. / Camassel, J. et al. | 2005
- R29
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Growth and continuous‐wave laser operation of disordered crystals of Yb3+:NaLa(WO4)2 and Yb3+:NaLa(MoO4)2Liu, J. / Cano‐Torres, J. M. / Cascales, C. / Esteban‐Betegón, F. / Serrano, M. D. / Volkov, V. / Zaldo, C. / Rico, M. / Griebner, U. / Petrov, V. et al. | 2005
- R32
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Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO2 and SiN as gate insulatorsBalachander, Krishnan / Arulkumaran, Subramaniam / Sano, Y. / Egawa, Takashi / Baskar, Krishnan et al. | 2005
- R35
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Efficient focusing with a concave lens based on a photonic crystal with an unusual effective index of refractionFoca, E. / Föll, H. / Daschner, F. / Sergentu, V. V. / Carstensen, J. / Frey, S. / Knöchel, R. / Tiginyanu, I. M. et al. | 2005
- R38
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Chemical sensitivity in positron annihilation with just one single Ge detectorHaaks, Matz / Staab, Torsten E. M. / Saarinen, Kimmo / Maier, Karl et al. | 2005
- R41
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Local elastic response of individual grains in lead‐free Nb‐doped Bi4Ti3O12 piezoelectric ceramicsZeng, H. R. / Yu, H. F. / Zhang, L. N. / Chu, R. Q. / Li, G. R. / Yin, Q. R. et al. | 2005
- R44
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Rhombohedral LSMO films – a unique case of ferroelastic domain formationFarag, N. / Bobeth, M. / Pompe, W. / Romanov, A. E. / Speck, J. S. et al. | 2005