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Synonyms were used for: Fremdatomzusatz
Search without synonyms: keywords:(Fremdatomzusatz)
Used synonyms:
- doping process
-
Carbon-doped GaAs grown by organometallic vapor phase epitaxy using tris-dimethylaminoarsenic and CCl4
Tema Archive | 1994|Keywords: Fremdatomzusatz -
Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN
Tema Archive | 2002|Keywords: Fremdatomzusatz -
Comparison of H+ and He+ implant isolation of GaAs-based heterojunction bipolar transistors
Tema Archive | 1995|Keywords: Fremdatomzusatz -
Damage introduction in GaAs/AlGaAs and InGaAs/InP heterojunction bipolar transistor structures during electron cyclotron resonance plasma processing
Tema Archive | 1993|Keywords: Fremdatomzusatz -
Development of thin film and nanorod ZnO-based LEDs and sensors
Tema Archive | 2007|Keywords: Fremdatomzusatz -
Device series resistance calculations for vertical cavity surface-emitting lasers
Tema Archive | 2001|Keywords: Fremdatomzusatz -
Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs
Tema Archive | 1995|Keywords: Fremdatomzusatz -
Dry etched mesas for buried heterostructure InGaAsP/InP lasers using electron cyclotron resonance Cl2/CH4/H2/Ar discharges
Tema Archive | 1994|Keywords: Fremdatomzusatz -
Dry etching and implantantion characteristics of III-N alloys
Tema Archive | 1994|Keywords: Fremdatomzusatz -
Electrical and optical properties of GaN films implanted with Mn and Co
Tema Archive | 2002|Keywords: Fremdatomzusatz -
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
Tema Archive | 2001|Keywords: Fremdatomzusatz -
Er doping of III-nitrides during growth by metalorganic molecular beam epitaxy
Tema Archive | 1997|Keywords: Fremdatomzusatz -
Fabrication and performance of GaN electronic devices
Tema Archive | 2000|Keywords: Fremdatomzusatz -
High ion density dry etching of compound semiconductors
Tema Archive | 1996|Keywords: Fremdatomzusatz -
High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors
Tema Archive | 1993|Keywords: Fremdatomzusatz
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