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Rate theory model of dopant incorporation during molecular beam epitaxy: effects of Coulomb repulsion
British Library Online Contents | 1994| -
Shallow Boron Implant Activation
British Library Conference Proceedings | 1999|Contributors: Gossmann, H.-J. L. -
MO-1 Comparison of B and BF~2 Source/Drain Extension Implants for PMOS Transistors with thin Gate Oxides
British Library Conference Proceedings | 2000| -
Development of radar glacier zones on the King George Island ice cap, Antarctica, during austral summer 1996/97 as observed in ERS-2 SAR data
British Library Conference Proceedings | 2000| -
Amorphization of Si(001) by ultra low energy (0.5-5keV) ion implantation observed with high-resolutionRBS
British Library Online Contents | 1999| -
Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
National licenceAmerican Institute of Physics | 2001| -
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
National licenceAmerican Institute of Physics | 1999| -
Germanium partitioning in silicon during rapid solidification
National licenceAmerican Institute of Physics | 1995| -
Behavior of intrinsic Si point defects during annealing in vacuum
British Library Online Contents | 1995| -
A Quantitative Study of Excess Vacancy Defects in High-Energy Ion Implanted Si
British Library Conference Proceedings | 2002| -
Defect distribution in low-temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons
British Library Online Contents | 1995| -
Spatial and temporal changes in dry-snow line altitude on the Antarctic Peninsula
British Library Online Contents | 2009| -
Activation volume for boron diffusion in silicon and implications for strained films
British Library Online Contents | 1999|
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