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Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case
National licenceTrans Tech Publications | 2013|Contributors: Sugiyama, T., Seki, H. -
High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
National licenceTrans Tech Publications | 2010|Contributors: Seki, Akinori, Ishii, T. -
Diffusion and Gettering of Transition Metals in 4H-SiC
National licenceTrans Tech Publications | 2012|Contributors: Seki, Akinori, Shirai, T., Bessho, T. -
Characterization of Impurities in Si(C2H5O)4 for Efficient SiO2 Production in ULSI Technology
National licenceTrans Tech Publications | 1993|Contributors: Danno, T., Seki, K. -
Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
National licenceTrans Tech Publications | 2009|Contributors: Seki, H., Wakabayashi, T.
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