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V2Se: a novel antifluorite-type cubic phase with a metal–metal bonding
Royal Society of Chemistry | 2019| -
Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions
American Chemical Society | 2017| -
Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor
Free accessAmerican Institute of Physics | 2020| -
Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor
Free accessArXiv | 2020| -
Origin of unipolarity in carbon nanotube field effect transistors
National licenceRoyal Society of Chemistry | 2012| -
Ab initio computation of the transition temperature of the charge density wave transition in TiSe2
Free accessArXiv | 2015| -
A METAL-INSULATOR-GRAPHENE TUNNEL DIODE WITH BIAS-INDUCED BARRIER MODULATION
Free accessEuropean Patent Office | 2017| -
van der Waals Layered Materials: Opportunities and Challenges
British Library Online Contents | 2017| -
Raman Characterization of the Charge Density Wave Phase of 1T-TiSe2: From Bulk to Atomically Thin Layers
American Chemical Society | 2017| -
Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers
American Institute of Physics | 2015| -
Publisher's Note: “Thin-layer black phosphorus/GaAs heterojunction p-n diodes” [Appl. Phys. Lett. 106, 233110 (2015)]
Free accessAmerican Institute of Physics | 2015| -
Long-range ferromagnetic ordering in vanadium-doped WSe2 semiconductor
American Institute of Physics | 2019| -
Revealing antiferromagnetic transition of van der Waals MnPS3 via vertical tunneling electrical resistance measurement
Free accessAmerican Institute of Physics | 2019|
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