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`Classical' current-voltage characteristics of 4H-SiC p+-n junction diodes
National licenceIOP Institute of Physics | 2000| -
`Non-local' response of RTP ohmic plasmas to peripheral perturbations
National licenceIOP Institute of Physics | 1999| -
>35% 5-junction space solar cells based on the direct bonding technique
IOP Institute of Physics | 2021| -
~1.2 V open-circuit voltage from organic solar cells
Research highlightsIOP Institute of Physics | 2021| -
0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA
National licenceSEMICONDUCTOR INTEGRATED CIRCUITSIOP Institute of Physics | 2013| -
0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
National licenceIOP Institute of Physics | 2000| -
1.3–1.5 µm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
National licenceIOP Institute of Physics | 2004| -
1.3-μm 1 × 4 MMI coupler based on shallow-etched InP ridge waveguides
Semiconductor DevicesIOP Institute of Physics | 2014| -
1.3 µm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
National licenceIOP Institute of Physics | 2007| -
1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
National licenceIOP Institute of Physics | 2000| -
1.3 µm range 40 GHz quantum-dot mode-locked laser under external continuous wave light injection or optical feedback
National licenceIOP Institute of Physics | 2011| -
1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
National licenceIOP Institute of Physics | 2001| -
1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination
Semiconductor DevicesIOP Institute of Physics | 2014| -
1.5-μm and 10-Gb s−1 etched mesa buried heterostructure DFB-LD for datacenter networks
Free accessPaperIOP Institute of Physics | 2015| -
1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy
Free accessIOP Institute of Physics | 2009| -
1.55 µm spot-size converter integrated polarization-insensitive quantum-well semiconductor optical amplifier with tensile-strained barriers
National licenceIOP Institute of Physics | 2004| -
1.55 µm spot-size converter with monolithically integrated laser diode by conventional process
National licenceIOP Institute of Physics | 2005| -
1/f noise in amorphous Sb2Te3 for energy-efficient stochastic synapses in neuromorphic computing
IOP Institute of Physics | 2021|
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