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Rutherford backscattering spectrometry characterization of nanoporous chalcogenide thin films grown at oblique angles
National licenceRoyal Society of Chemistry | 2008| -
Tuning the surface morphology in self-organized ion beam nanopatterning of Si(001) via metal incorporation: from holes to dots
British Library Online Contents | 2008| -
Rutherford backscattering spectrometry characterization of nanoporous chalcogenide thin films grown at oblique angles
British Library Online Contents | 2008| -
Study of SiN~x:H~y passivant layers for AlGaN/GaN high electron mobility transistors
British Library Conference Proceedings | 2008| -
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
National licenceAmerican Institute of Physics | 2008| -
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content (3 pages)
British Library Online Contents | 2008| -
Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors
British Library Online Contents | 2008| -
Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction
British Library Online Contents | 2008| -
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
National licenceAmerican Institute of Physics | 2008| -
Rutherford backscattering spectrometry characterization of nanoporous chalcogenide thin films grown at oblique angles
Online Contents | 2008|Contributors: Redondo-Cubero, A. -
Tuning the surface morphology in self-organized ion beam nanopatterning of Si(001) via metal incorporation: from holes to dots
Online Contents | 2008|Contributors: Redondo-Cubero, A. -
Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content
Online Contents | 2008|Contributors: Redondo-Cubero, A. -
Influence of steering effects on strain detection in AlGaInN-GaN heterostructures by ion channelling
Online Contents | 2009| -
Aluminum incorporation in Ti1−xAlxN films studied by x-ray absorption near-edge structure
National licenceAmerican Institute of Physics | 2009| -
Aluminum incorporation in Ti~1~-~xAl~xN films studied by x-ray absorption near-edge structure (6 pages)
British Library Online Contents | 2009|
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