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Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
National licenceAmerican Institute of Physics | 1996| -
Multihierarchical electrodes based on titanate nanotubes and zinc oxide nanorods for photoelectrochemical water splitting
National licenceRoyal Society of Chemistry | 2016| -
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
National licenceAmerican Institute of Physics | 2001| -
Direct imaging of impurity‐induced Raman scattering in GaN
National licenceAmerican Institute of Physics | 1996| -
Spatial distribution of the luminescence in GaN thin films
National licenceAmerican Institute of Physics | 1996| -
Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
National licenceAmerican Institute of Physics | 1996| -
CO tolerance of Pt and PtSn intermetallic electrocatalysts on synthetically modified reduced graphene oxide supports
National licenceRoyal Society of Chemistry | 2014| -
Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers
National licenceAmerican Institute of Physics | 1994| -
Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well
National licenceAmerican Institute of Physics | 2001| -
Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes
National licenceAmerican Institute of Physics | 2007| -
Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
National licenceAmerican Institute of Physics | 2008| -
Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography
National licenceAmerican Institute of Physics | 2007| -
Growth of self-assembled GaN quantum dots via the vapor–liquid–solid mechanism
National licenceAmerican Institute of Physics | 2002| -
Luminescence from stacking faults in gallium nitride
National licenceAmerican Institute of Physics | 2005| -
Reduction of GaAs diode laser spontaneous emission
National licenceAmerican Institute of Physics | 1980| -
Initial stages of epitaxial growth of GaAs on (100) silicon
National licenceAmerican Institute of Physics | 1987| -
Simple ion milling preparation of 〈111〉 tungsten tips
National licenceAmerican Institute of Physics | 1989| -
Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates
National licenceAmerican Institute of Physics | 2007| -
Microstructure of GaN epitaxy on SiC using AlN buffer layers
National licenceAmerican Institute of Physics | 1995| -
All solid-state high power microwave source with high repetition frequency
National licenceAmerican Institute of Physics | 2013|
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