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DC sputtering of highly c-axis AlN films on top of 3C-SiC (111)-on-Si (111) substrates under various N2 concentrations
American Institute of Physics | 2017| -
Growth of 3C-SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C
Free accessBASE | 2011| -
Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration
American Institute of Physics | 2017| -
Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates
National licenceRoyal Society of Chemistry | 2016| -
Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications
American Chemical Society | 2017|
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