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GaN FinFETs and trigate devices for power and RF applications: review and perspective
PaperIOP Institute of Physics | 2021| -
A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
ReviewsIOP Institute of Physics | 2019| -
Review on first-principles study of defect properties of CdTe as a solar cell absorber
Topical ReviewIOP Institute of Physics | 2016| -
Side chain engineering on D18 polymers yields 18.74% power conversion efficiency
IOP Institute of Physics | 2021| -
n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
PaperIOP Institute of Physics | 2018| -
Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
PaperIOP Institute of Physics | 2017| -
Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon
PaperIOP Institute of Physics | 2019| -
Recent studies of nonlinear chalcogenide crystals for the mid-IR
Topical ReviewIOP Institute of Physics | 2016| -
Super-hydrophilic copper sulfide films as light absorbers for efficient solar steam generation under one sun illumination
PaperIOP Institute of Physics | 2018| -
Flexible devices: from materials, architectures to applications Project supported by the National Key R&D Program of China (Nos. 2017YFA0208200, 2016YFB0700600, 2015CB659300), the National Natural Science Foundation of China (Nos. 21403105, 21573108), and the Fundamental Research Funds for the Central Universities (No. 020514380107).
PaperIOP Institute of Physics | 2018| -
The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems
Topical ReviewIOP Institute of Physics | 2017| -
Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
Invited ReviewIOP Institute of Physics | 2015| -
Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification
LetterIOP Institute of Physics | 2020| -
Reliability and parasitic issues in GaN-based power HEMTs: a review
Topical ReviewIOP Institute of Physics | 2016| -
A review of selected topics in physics based modeling for tunnel field-effect transistors
Free accessTopical ReviewIOP Institute of Physics | 2017| -
Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission
Free accessTopical ReviewIOP Institute of Physics | 2016| -
InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review
Topical ReviewIOP Institute of Physics | 2019| -
The transport and optical sensing properties of MoS2, MoSe2, WS2 and WSe2 semiconducting transition metal dichalcogenides
PaperIOP Institute of Physics | 2018|
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