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Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1−xGex/Si(100) heterostructure
Elsevier | 2008|Keywords: 73.40.Gk -
Tunnelling through randomly inhomogeneous barriers as a special problem of the scattering theory
Elsevier | 2007|Keywords: 73.40.Gk -
Field emission characteristics of nano-structured carbon films deposited on differently pretreated Mo films
Elsevier | 2008|Keywords: 73.40.Gk -
Magnetic characterization of MnPt/CoFe bilayers using the MOKE technique
Elsevier | 2008|Keywords: 73.40.Gk
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