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4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C
Free accessAmerican Institute of Physics | 2024| -
Publisher's Note: “4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C” [Appl. Phys. Lett. 124, 192101 (2024)]
Free accessAmerican Institute of Physics | 2024| -
System-level modeling of MEMS using generalized Kirchhoffian networks - basic principles
Tema Archive | 2013| -
Thermionic emission laws for general electron dispersion relations and band structure data
American Institute of Physics | 2019| -
Rigorous theory of graded thermoelectric converters including finite heat transfer coefficients
American Institute of Physics | 2017| -
UNIFIED FRAMEWORK FOR THERMAL, ELECTRICAL, MAGNETIC, AND OPTICAL SEMICONDUCTOR DEVICE MODELING
Emerald Group Publishing | 1991|
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