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81–100 of 160 hits
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Structural and electrical characteristics of Ge and Se implanted InP after rapid thermal annealing
National licenceAmerican Institute of Physics | 1992| -
Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys
National licenceAmerican Institute of Physics | 2010| -
A flow cryostat for cooling of eight independent pipe guns
National licenceAmerican Institute of Physics | 1991| -
Discontinuous tracks in relaxed Si0.5Ge0.5 alloy layers: A velocity effect
National licenceAmerican Institute of Physics | 2003| -
Soft x-ray imaging for spheromak-like plasmas (abstract)
National licenceAmerican Institute of Physics | 2001| -
Ion dynamics in compacted clays: Derivation of a two-state diffusion-reaction scheme from the lattice Fokker-Planck equation
National licenceAmerican Institute of Physics | 2006| -
Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys
American Institute of Physics | 2016| -
Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in silicon
National licenceAmerican Institute of Physics | 2000| -
A high-energy-density, high-Mach number single jet experiment
National licenceAmerican Institute of Physics | 2011| -
Influence of inductance induced noise in an YBa2Cu3O7 dc‐SQUID at high operation temperatures
National licenceAmerican Institute of Physics | 1994| -
Radiative stabilization of symmetric 4l4l’ and non‐symmetric 3l14l’ states in O6+
American Institute of Physics | 1993| -
Laboratory observation of secondary shock formation ahead of a strongly radiative blast wave
National licenceAmerican Institute of Physics | 2006| -
Pseudomorphic Si1−xSnx alloy films grown by molecular beam epitaxy on Si
National licenceAmerican Institute of Physics | 1995| -
Role of vibrational softening in fast dynamics of an amorphous polyimide far below Tg
National licenceAmerican Institute of Physics | 1998| -
Nuclear Magnetic Relaxation Studies of (CD3O)211BH
National licenceAmerican Institute of Physics | 1967| -
Lifetimes and predissociation mechanisms of O+2 b 4Σg−(v = 5–8)
National licenceAmerican Institute of Physics | 1982| -
Predissociation spectroscopy of O+2: a 4Πu (v′′=6–11)→b 4Σ−g (v′=5–9)
National licenceAmerican Institute of Physics | 1981| -
Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates
National licenceAmerican Institute of Physics | 1996|
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