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Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence
National licenceAmerican Institute of Physics | 1991| -
Damage accumulation during ion implantation of unstrained Si1−xGex alloy layers
National licenceAmerican Institute of Physics | 1992| -
Dose rate effects on damage accumulation in Si+‐implanted gallium arsenide
National licenceAmerican Institute of Physics | 1991| -
Damage saturation during high‐energy ion implantation of Si1−xGex
National licenceAmerican Institute of Physics | 1992| -
Study of the effect of ion implantation on the electrical and microstructural properties of tin‐doped indium oxide thin films
National licenceAmerican Institute of Physics | 1993| -
Donor generation from native defects induced by In^+ implantation into tin-doped indium oxide
British Library Online Contents | 1995| -
Kinetics of solid phase epitaxial regrowth in amorphized Si0.88Ge0.12 measured by time‐resolved reflectivity
National licenceAmerican Institute of Physics | 1993| -
Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+
National licenceAmerican Institute of Physics | 1994| -
Damage saturation during high-energy ion implantation of Si~1~-~xGe~x
British Library Online Contents | 1992| -
Direct measurement of evaporation during rapid thermal processing of capped GaAs
National licenceAmerican Institute of Physics | 1987| -
CRYSTAL ION SLICING OF DOMAIN MICROENGINEERED ELECTRO-OPTIC DEVICES ON LITHIUM NIOBATE
British Library Conference Proceedings | 2002| -
CRYSTAL ION SLICING OF DOMAIN MICROENGINEERED ELECTRO-OPTIC DEVICES ON LITHIUM NIOBATE
British Library Online Contents | 2001| -
Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500–600 °C
National licenceAmerican Institute of Physics | 1996| -
Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix
National licenceAmerican Institute of Physics | 2002| -
Raman Study of "Boson Peak" in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
British Library Online Contents | 1993| -
Study of the effect of ion implantation on the electrical and microstructural properties of tin-doped indium oxide thin films
British Library Online Contents | 1993| -
Kinetics of solid phase epitaxial regrowth in amorphized Si~0~.~8~8Ge~0~.~1~2 measured by time-resolved reflectivity
British Library Online Contents | 1993| -
Switchable reflectivity on silicon from a composite VO2-SiO2 protecting layer
National licenceAmerican Institute of Physics | 2004|
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