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4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
National licenceAmerican Institute of Physics | 2003| -
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
British Library Online Contents | 2003| -
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
Online Contents | 2003|Contributors: Mcclintock, R. -
320×256 solar-blind focal plane arrays based on AlxGa1−xN
National licenceAmerican Institute of Physics | 2005| -
320x256 solar-blind focal plane arrays based on Al~xGa~1~-~xN (3 pages)
British Library Online Contents | 2005| -
Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
British Library Online Contents | 2013| -
Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
Online Contents | 2013|Contributors: McClintock, R. -
Advances in UV sensitive visible blind GaN-based APDs (Invited Paper) [7945-54]
British Library Conference Proceedings | 2011| -
Al~xGa~1~-~xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% (4 pages)
British Library Online Contents | 2013| -
Al~xGa~1~-~xN-based deep-ultraviolet 320 x 256 focal plane array
British Library Online Contents | 2012| -
Al~xGa~1~-~xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AIN on Si substrate (4 pages)
British Library Online Contents | 2013| -
Al~xGa~1~-~xN materials and device technology for solar blind ultraviolet photodetector applications [4288-25]
British Library Conference Proceedings | 2001| -
AlGaN-based deep UV light emitting diodes with peak emission below 255 nm [5732-57]
British Library Conference Proceedings | 2005| -
AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
American Institute of Physics | 2013|
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