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A capillary liquid film technique for solution epitaxy of III–V compounds
National licenceElsevier | 1971| -
Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y
National licenceAmerican Institute of Physics | 1984| -
Ga&sngbnd;As&sngbnd;Si: Phase Studies and Electrical Properties of Solution‐Grown Si‐Doped GaAs
National licenceAmerican Institute of Physics | 1970| -
Surface photovoltage in Ge‐doped p‐type AlxGa1−xAs
National licenceAmerican Institute of Physics | 1981| -
Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
American Institute of Physics | 1985| -
DOUBLE‐HETEROSTRUCTURE INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2
National licenceAmerican Institute of Physics | 1970| -
Reduction of threshold current density in GaAs&sngbnd;Alx Ga1−x As heterostructure lasers by separate optical and carrier confinement
National licenceAmerican Institute of Physics | 1973| -
JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
National licenceAmerican Institute of Physics | 1970| -
Technique for preparation of low-threshold room-temperature GaAs laser diode structures
Engineering Index Backfile | 1969| -
Phase and thermodynamic properties of Ga-Al-P system. Solution epitaxy of GaxAl1-xP and AlP
Engineering Index Backfile | 1969| -
Electrical properties of Ge‐doped p‐type AlxGa1−xAs
National licenceAmerican Institute of Physics | 1979|
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