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Improved performance of GeON as charge storage layer in flash memory by optimal annealing
British Library Online Contents | 2012| -
Interfacial properties and reliability of SiO2 grown on 6H-SiC in dry O2 plus trichloroethylene
Online Contents | 2004| -
Laser micromachining of optical microstructures with inclined sidewall profile
Tema Archive | 2009| -
PAPERS - Silicon Devices - Interface Properties of NO-Annealed N2O-Grown Oxynitride
Online Contents | 1999| -
Charge-trapping characteristics of fluorinated thin ZrO~2 film for nonvolatile memory applications (5 pages)
British Library Online Contents | 2014| -
Analysis on Accuracy of Charge-Pumping Measurement with Gate Sawtooth Pulses
Online Contents | 1998| -
A Novel Bar-Shaped Magnetic Shielding for Magnetoresistive Sensors in Current Measurement on Printed Circuit Boards
British Library Online Contents | 2014| -
Correlation Between Hot-Carrier-Induced Interface States and GIDL Current Increase in N-MOSFET's
Online Contents | 1998| -
Effects of Ta incorporation in La~2O~3 gate dielectric of InGaZnO thin-film transistor (5 pages)
British Library Online Contents | 2014| -
Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation
Online Contents | 1997| -
Influence of backsurface argon bombardment on SiO2-Si interface characteristics
Online Contents | 1996| -
Mobility Improvement of n-MOSFET's with Nitrided Gate Oxide by Backsurface Ar+ Bombardment
Online Contents | 1995| -
A Closed-Form Delay Expression for Digital BiCMOS Circuits with High-Injection Effects
Online Contents | 1994| -
A Study on Metal-Insulator-Silicon Hydrogen Sensor with LaTiON as Gate Insulator
British Library Online Contents | 2012|
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