A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment (English)
- New search for: Lai, P.T.
- New search for: Lai, P.T.
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- New search for: Lo, H.B.
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In:
Journal of applied physics
;
82
, 4
; 1947-1950
;
1997
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ISSN:
- Article (Journal) / Print
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Title:A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment
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Contributors:
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Published in:Journal of applied physics ; 82, 4 ; 1947-1950
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Publisher:
- New search for: AIP
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Place of publication:Melville, NY
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Publication date:1997
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.00 / 50.30
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Table of contents – Volume 82, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Accepted Manuscript Status Inquiry System| 1997
- 1507
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Are equilibrium fluctuations detectable in diffracted intensities?Tringides, Michael C. / Larsson, Mats I. / Pfnu¨r, Herbert / Frischat, Hannes / Budde, Knut / Henzler, Martin et al. | 1997
- 1511
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Unipolar-current dipoles and other optimum reduced-symmetry multipolesCrow, James T. et al. | 1997
- 1518
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Dependence of optical gain on crystal orientation in wurtzite–GaN strained quantum-well lasersOhtoshi, T. / Niwa, A. / Kuroda, T. et al. | 1997
- 1521
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Characterization of refractive index change induced by electron irradiation in amorphous thin As2S3 filmsNordman, Nina / Nordman, Olli et al. | 1997
- 1525
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Measurement of laser-induced acoustic waves with a calibrated optical transducerPaltauf, G. / Schmidt-Kloiber, H. et al. | 1997
- 1532
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Effects of optical penetration and laser pulse duration on laser generated longitudinal acoustic wavesEnguehard, Franck / Bertrand, Lionel et al. | 1997
- 1539
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Spatial and temporal characteristics of a vacuum-arc rail-gun plasmaRoychowdhury, P. / Vijayan, T. / Iyengar, S. T. et al. | 1997
- 1546
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Particle accumulation in a flowing silane dischargeJelenkovic´, B. M. / Gallagher, Alan et al. | 1997
- 1554
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Use of Rietveld refinement for elastic macrostrain determination and for evaluation of plastic strain history from diffraction spectraDaymond, M. R. / Bourke, M. A. M. / Von Dreele, R. B. / Clausen, B. / Lorentzen, T. et al. | 1997
- 1563
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In situ transmission electron microscopy study of plastic deformation and stress-induced voiding in Al–Cu interconnectsJawarani, D. / Kawasaki, H. / Yeo, I.-S. / Rabenberg, L. / Stark, J. P. / Ho, P. S. et al. | 1997
- 1578
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Modeling of thermal stresses in metal interconnects: Effects of line aspect ratioShen, Y.-L. et al. | 1997
- 1582
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Selection rules of Raman scattering by optical phonons in strained cubic crystalsAnastassakis, E. et al. | 1997
- 1592
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Kinetics of electromigration-induced edge drift in Al–Cu thin-film interconnectsKim, Choong-Un / Morris, J. W. / Lee, Hyuck-Mo et al. | 1997
- 1599
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Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxyNakashima, Kiichi / Sugiura, Hideo et al. | 1997
- 1608
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Stability of the grain configurations of thin films—A model for agglomerationRha, J. J. / Park, J. K. et al. | 1997
- 1617
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The synthesis, characterization, and mechanical properties of thick, ultrahard cubic boron nitride films deposited by ion-assisted sputteringMirkarimi, P. B. / Medlin, D. L. / McCarty, K. F. / Dibble, D. C. / Clift, W. M. / Knapp, J. A. / Barbour, J. C. et al. | 1997
- 1626
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A cross-sectional atomic force microscopy study of nanocrystalline Ge precipitates in SiO2 formed from metastable Si1−xGexO2Caragianis-Broadbridge, C. / Blaser, J. M. / Paine, D. C. et al. | 1997
- 1632
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Thermal oxide on CdSeMasson, D. P. / Lockwood, D. J. / Graham, M. J. et al. | 1997
- 1640
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Charge transfer from Cu in YBa2Cu3O7−δ and Ba2Cu3O4Cl2 crystals determined by Auger electron spectroscopyOgawa, Koji / Noro, Sumiko / Maki, Kunisuke et al. | 1997
- 1640
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Charge transfer from Cu in YBa2Cu3O7 - d and Ba2Cu3O4Cl2 crystals determined by Auger electron spectroscopyOgawa, Koji et al. | 1997
- 1640
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Charge transfer from Cu in YBa~2Cu3~O~7~-~ and Ba~2Cu~3O~Cl~2 crystals determined by Auger electron spectroscopyOgawa, K. / Noro, S. / Maki, K. et al. | 1997
- 1649
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Monte Carlo calculation of velocity-field characteristics of wurtzite GaNBhapkar, Udayan V. / Shur, Michael S. et al. | 1997
- 1656
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Free-electron transport in semi-insulating GaAsKhirouni, K. / Bourgoin, J. C. et al. | 1997
- 1661
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Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surfaceHirota, Y. / Maeda, F. / Watanabe, Y. / Ogino, T. et al. | 1997
- 1667
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Excitonic quantum confinement effects and exciton electroabsorption in semiconductor thin quantum boxesGotoh, Hideki / Ando, Hiroaki et al. | 1997
- 1678
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Three-dimensional self-consistent simulation of interface and dopant disorders in delta-doped grid-gate quantum-dot devicesThean, V. Y. / Nagaraja, S. / Leburton, J. P. et al. | 1997
- 1687
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Intrinsic chaos in a dc field biased quantum heterostructureMcNary, A. Jason / Puri, Ashok et al. | 1997
- 1696
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A study of electrically active defects created in p-InP by CH4:H2 reactive ion etchingGoubert, L. / Van Meirhaeghe, R. L. / Clauws, P. / Cardon, F. / Van Daele, P. et al. | 1997
- 1700
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Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxySouza, P. L. / Yavich, B. / Pamplona-Pires, M. / Henriques, A. B. / Gonc¸alves, L. C. D. et al. | 1997
- 1700
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Electronic and optical properties of periodically Si d-doped InP grown by low pressure metalorganic vapor phase epitaxySouza, P.L. et al. | 1997
- 1706
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Dynamics of the single barrier heterostructure hot electron diodeReklaitis, A. / Stasch, R. / Asche, M. / Hey, R. / Krotkus, A. / Scho¨ll, E. et al. | 1997
- 1711
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Control of stability and current-voltage characteristics in amorphous hydrogenated silicon nitride thin film diodesMcGarvey, B. / Curran, J. E. / Ford, R. A. / French, I. D. / Gale, I. G. / Hewett, J. / Sandoe, J. N. et al. | 1997
- 1716
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Electrical properties of the Ti(SiGe)~2/Si~0~.~8~8Ge~0~.~1~1/Si(001) contact systemLyakas, M. / Beregovsky, M. / Eizenberg, M. / Meyer, F. et al. | 1997
- 1716
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Electrical properties of the Ti(SiGe)2/Si0.89Ge0.11/Si(001) contact systemLyakas, M. / Beregovsky, M. / Eizenberg, M. / Meyer, F. et al. | 1997
- 1723
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Comparison of PdGeTiPt and NiGeAu ohmic contacts to n-GaAs and PdGeTiPt and TiPd contacts to p+-GaAsJones, K. A. / Cole, M. W. / Han, W. Y. / Eckart, D. W. / Hilton, K. P. / Crouch, M. A. / Hughes, B. H. et al. | 1997
- 1730
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Energy loss spectroscopy of RuO2 thin filmsMondio, G. / Neri, F. / Allegrini, M. / Iembo, A. / Fuso, F. et al. | 1997
- 1736
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Nonlinear microwave properties of Nb3Sn sputtered superconducting filmsAndreone, A. / Cassinese, A. / Di Chiara, A. / Iavarone, M. / Palomba, F. / Ruosi, A. / Vaglio, R. et al. | 1997
- 1743
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Wall energy and wall thickness of exchange-coupled rare-earth transition-metal triple layer stacksRaasch, D. / Mathieu, C. et al. | 1997
- 1747
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Magnetism and nanostructure of Fe93−x−yZr7BxCuy alloysKopcewicz, M. / Grabias, A. / Williamson, D. L. et al. | 1997
- 1759
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Magnetic measurements on electrochromic Ni-oxide-based filmsRagan, D. D. / Svedlindh, P. / Granqvist, C. G. et al. | 1997
- 1763
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Sputtering power dependence of the magnetic properties of CoCrPtYumoto, Seiji et al. | 1997
- 1776
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Formation and decay kinetics of light-induced dye radicals on spectrally sensitized AgBr microcrystals measured by electron spin resonance spectroscopy: A quantitative modelCeulemans, T. / Schoemaker, D. / Vandenbroucke, D. / De Keyzer, R. et al. | 1997
- 1784
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Electron spin resonance of pulsed plasma-enhanced chemical vapor deposited fluorocarbon filmsLabelle, Catherine B. / Limb, Scott J. / Gleason, Karen K. et al. | 1997
- 1788
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Stress and frequency dependence of the direct piezoelectric effect in ferroelectric ceramicsDamjanovic, Dragan et al. | 1997
- 1798
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Electric field induced phase transition of antiferroelectric lead lanthanum zirconate titanate stannate ceramicsPark, Seung-Eek / Pan, Ming-Jen / Markowski, Kelley / Yoshikawa, Shoko / Cross, L. Eric et al. | 1997
- 1804
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Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystalsPark, Seung-Eek / Shrout, Thomas R. et al. | 1997
- 1812
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Atomic level stress and light emission of Ce activated SrS thin filmsWarren, W. L. / Vanheusden, K. / Tallant, D. R. / Seager, C. H. / Sun, S.-S. / Evans, D. R. / Dennis, W. M. / Soininen, Erkki / Bullington, J. A. et al. | 1997
- 1815
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Er in molecular beam epitaxy grown GaAs/AlGaAs structuresGusev, O. B. / Prineas, J. P. / Lindmark, E. K. / Bresler, M. S. / Khitrova, G. / Gibbs, H. M. / Yassievich, I. N. / Zakharchenya, B. P. / Masterov, V. F. et al. | 1997
- 1824
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Photoluminescence excitation measurements on erbium implanted GaNTorvik, J. T. / Feuerstein, R. J. / Qiu, C. H. / Pankove, J. I. / Namavar, F. et al. | 1997
- 1828
-
Time-integrated reflectivity of laser-induced back-ablated aluminum thin film targetsBullock, Anthony B. / Bolton, Paul R. / Mayer, Fred J. et al. | 1997
- 1832
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Visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin filmsEstes, M. J. / Hirsch, L. R. / Wichart, S. / Moddel, G. / Williamson, D. L. et al. | 1997
- 1841
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Photoluminescence and electroluminescence of new lanthanide-(methyoxybenzoyl)benzoate complexesEdwards, A. / Claude, C. / Sokolik, I. / Chu, T. Y. / Okamoto, Y. / Dorsinville, R. et al. | 1997
- 1847
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A comparative study of electrogenerated chemiluminescence in poly(3-hexylthiophene) and poly(2-methoxy-5-dodecyloxy-p-phenylenevinylene)Nambu, Hidetaka / Hamaguchi, Maki / Yoshino, Katsumi et al. | 1997
- 1853
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Relative sensitivity of photomodulated reflectance and photothermal infrared radiometry to thermal and carrier plasma waves in semiconductorsSalnick, A. / Mandelis, A. / Ruda, H. / Jean, C. et al. | 1997
- 1860
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Secondary electron emission from diamond surfacesShih, A. / Yater, J. / Pehrsson, P. / Butler, J. / Hor, C. / Abrams, R. et al. | 1997
- 1868
-
Spatial distribution of Cu sputter ejected by very low energy ion bombardmentDoughty, C. / Gorbatkin, S. M. / Berry, L. A. et al. | 1997
- 1876
-
Angular and energy dependence of ion bombardment of Mo/Si multilayersVoorma, H.-J. / Louis, E. / Bijkerk, F. / Abdali, S. et al. | 1997
- 1882
-
Plasma characteristics at off-axis high pressure magnetron YBa2Cu3O7−δ sputteringMarchenko, V. A. / Znamenskii, A. G. / Helmersson, U. et al. | 1997
- 1882
-
Plasma characteristics at off-axis high pressure magnetron YBa 2)Cu3O7 - d sputteringMarchenko, V.A. et al. | 1997
- 1890
-
Structural investigations of GaN grown by low-pressure chemical vapor deposition on 6H–SiC and Al2O3 from GaCl3 and NH3Koynov, S. / Topf, M. / Fischer, S. / Meyer, B. K. / Radojkovic, P. / Hartmann, E. / Liliental-Weber, Z. et al. | 1997
- 1896
-
The selective etching with H+ ions and its effect on the oriented growth of diamond filmsZhang, W. J. / Jiang, X. / Xia, Y. B. et al. | 1997
- 1900
-
Radical density measurements in an oxyacetylene torch diamond growth flameWelter, M. D. / Menningen, K. L. et al. | 1997
- 1905
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Hydrogen bonding in plasma-deposited amorphous hydrogenated boron filmsSaß, M. / Annen, A. / Jacob, W. et al. | 1997
- 1909
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Mechanisms influencing “hot-wire” deposition of hydrogenated amorphous siliconMolenbroek, Edith C. / Mahan, A. H. / Gallagher, Alan et al. | 1997
- 1918
-
Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxyYang, B. / Brandt, O. / Jenichen, B. / Mu¨llha¨user, J. / Ploog, K. H. et al. | 1997
- 1921
-
Matrix isolation Fourier transform infrared spectroscopic study of energetic nitrogen fluxes applied to fabrication of nitride thin films. Observation of N3 radical and quantitative estimation of matrix-isolated N atomsKhabashesku, V. N. / Margrave, J. L. / Waters, K. / Schultz, J. A. et al. | 1997
- 1925
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Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifierDaw, Edward / Bradley, Richard F. et al. | 1997
- 1930
-
Defect study in amorphous silicon/crystalline silicon solar cells by thermally stimulated capacitanceJagannathan, B. / Anderson, W. A. et al. | 1997
- 1936
-
Analysis of switching dynamics of asymmetric Fabry–Perot symmetric self-electro-optic effect devices with extremely shallow quantum wellsChoi, Young-Wan et al. | 1997
- 1947
-
A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardmentLai, P. T. / Xu, J. P. / Lo / Cheng, Y. C. et al. | 1997
- 1951
-
Light-emitting diodes based on poly-p-phenylene-vinylene: I. Charge-carrier injection and transportKarg, S. / Meier, M. / Riess, W. et al. | 1997
- 1961
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Light-emitting diodes based on poly-p-phenylene-vinylene: II. Impedance spectroscopyMeier, M. / Karg, S. / Riess, W. et al. | 1997
- 1967
-
Deep level transient measurements of DX centers in GaAlAs up to room temperatureDo´zsa, L. / Van Tuyen, Vo / Hubik, P. / Terziev, Nikolay / Mares, J. J. / Kristofik, J. et al. | 1997
- 1970
-
Off-axis extra lines in powder pattern electron paramagnetic resonance of Cr3+ in YAlO3Rakhimov, R. R. / Wilkerson, A. L. / Loutts, G. B. / Ries, H. R. et al. | 1997
- 1973
-
Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fieldsTaylor, D. V. / Damjanovic, D. et al. | 1997
- 1973
-
Evidence of domain wail contribution to the dielectric permittivity in PZT thin films at sub-switching fieldsTaylor, D. V. / Damjanovic, D. et al. | 1997
- 1976
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Band alignment strategy for efficient optical modulation in quantum-confined Stark effect devicesYip, R. Y.-F. / Masut, R. A. et al. | 1997
- 1979
-
CUMULATIVE AUTHOR INDEX| 1997