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Vertical and Lateral GaN Power Devices Enabled By Engineered GaN Substrates
British Library Conference Proceedings | 2018| -
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films
British Library Online Contents | 2017| -
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films
British Library Online Contents | 2017| -
(INVITED) HOMOEPITAXIAL GAN GROWTH AND SUBSTRATE-DEPENDENT EFFECTS
British Library Conference Proceedings | 2019| -
LATERAL GAN JFET DEVICES ON LARGE AREA ENGINEERED SUBSTRATES FOR ROBUST POWER SWITCHING
British Library Conference Proceedings | 2019|
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