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A DLTS study of the evolution of oxygen precipitates in Si at high temperature and high pressure
British Library Online Contents | 1996| -
A Study of the Conversion of the VO to the VO~2 Defect in Heat-Treated Silicon under Stress
British Library Conference Proceedings | 2002| -
Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields
British Library Online Contents | 2002| -
Blistering on a silicon surface in the process of sequential hydrogen/helium ion co-implantation
British Library Online Contents | 2001| -
Capacitance study of defects induced in heavily damaged region formed in hydrogen implanted Si
British Library Online Contents | 2003| -
Capacitance study of defects induced in heavily damaged region formed in hydrogen implanted Si
British Library Conference Proceedings | 2003| -
Capacitance study of selectively doped SiGe/Si heterostructures
National licenceIOP Institute of Physics | 2005| -
Capacitance study of selectively doped SiGe/Si heterostructures
British Library Online Contents | 2005| -
Changes in the parameters of silicon-on-insulator structures under irradiation
British Library Conference Proceedings | 2003| -
Characterization of Silicon-on-Insulator Structures by High-Resolution X-Ray Diffraction
British Library Online Contents | 2002| -
Characterization of the sanitary situation in the Kurgan Region
British Library Online Contents | 2006| -
Charge and Interface Traps in 1-Octadecene Monolayers on Silicon as a Function of Silicon Pretreatment and Deposition Regime
British Library Conference Proceedings | 2007| -
Charge deep-level transient spectroscopy of SiO2 and Al2O3 layers with embedded Ge nanocrystals
Online Contents | 2013| -
Charge deep-level transient spectroscopy of SiO2 and Al2O3 layers with embedded Ge nanocrystals
National licenceAmerican Institute of Physics | 2013| -
Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures
British Library Online Contents | 2003| -
Charge fluctuations at the bonding interface in the silicon-on-insulator structures
Springer Verlag | 2003|
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