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Effect of dislocations on the performance of GaSb-based diode lasers grown on silicon
American Institute of Physics | 2023| -
Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
Free accessDOAJ | 2023| -
Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
Free accessSpringer Verlag | 2022| -
Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14%
American Chemical Society | 2021| -
Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays
American Chemical Society | 2021| -
CELLULE PHOTOVOLTAÏQUE MULTI-JONCTIONS DE TYPE III-V SUR SUBSTRAT SILICIUM ET SON PROCEDE DE FABRICATION
Free accessEuropean Patent Office | 2020|
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