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Atomic-layer-deposited tantalum silicate as a gate dielectric for III–V MOS devices
Online Contents | 2011| -
Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects
Online Contents | 2011| -
High Pressure Study of Localized States Related to Lanthanide Ions in Solids
Online Contents | 2010| -
Thermally stable high effective work function TaCN thin films for metal gate electrode applications
Online Contents | 2009| -
Spin injection from perpendicular magnetized ferromagnetic -MnGa into (Al,Ga)As heterostructures
Online Contents | 2006| -
Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films
Online Contents | 2007| -
Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor DepositionFNR HREF="fn1">FN ID="fn1">This work was supported in part by the European Commission as a contribution to the project PULLNANO under contract No IST-026828 from the Information Society Technologies Programme (IST) within the European Union's Sixth RTD Framework Programme. Rob Trussell (Bede Scientific, Inc.) is acknowledged for experimental support of the GIXRD measurements.
Online Contents | 2007| -
GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN
Online Contents | 2002|
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