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Lattice-dynamical calculation of phonon scattering at ideal Si–Ge interfaces
National licenceAmerican Institute of Physics | 2005| -
Erratum: Lattice-dynamical calculation of phonon scattering at ideal Si-Ge interfaces [J. Appl. Phys. 97, 024903 (2005)]
Free accessAmerican Institute of Physics | 2005| -
Fabrication of dual-side metal patterns onto textile substrates for wearable electronics by combining wax-dot printing with electroless plating
National licenceRoyal Society of Chemistry | 2016| -
Pinning lattice: Effect of rhenium doping on the microstructural evolution from Tl-2212 to Hg-1212 films during cation exchange
National licenceAmerican Institute of Physics | 2004| -
Construction of soft porous crystal with silole derivative: strategy of framework design, multiple structural transformability and mechanofluorochromism
National licenceRoyal Society of Chemistry | 2012| -
High thermoelectric conversion efficiency of MgAgSb-based material with hot-pressed contacts
National licenceRoyal Society of Chemistry | 2015| -
Energy transfer and vibrational effects in the dissociation and scattering of D2 from Cu (111)
National licenceNature Publishing Group | 1992| -
Viscous-fingering experiments with periodic boundary conditions
National licenceAmerican Physical Society | 1990| -
Viscoelastic effects in patterns between miscible liquids
National licenceAmerican Physical Society | 1992| -
Associating-polymer effects in a Hele-Shaw experiment
National licenceAmerican Physical Society | 1993| -
Electroinduced structural change- and random walks-based impact on the light emission in Er3+/Yb3+ doped (Pb,La)(Zr,Ti)O3 ceramics
National licenceAmerican Institute of Physics | 2013| -
Area scaling in slab rf‐excited carbon monoxide lasers
National licenceAmerican Institute of Physics | 1991| -
Erratum: Perturbing Hele-Shaw flow with a small gap gradient
National licenceAmerican Physical Society | 1993| -
Strain and anisotropy effects on spin waves in epitaxial La0.67Sr0.33MnO3 films
National licenceAmerican Institute of Physics | 2005| -
Perturbing Hele-Shaw flow with a small gap gradient
National licenceAmerican Physical Society | 1992| -
Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer
National licenceAmerican Institute of Physics | 2012| -
Velocity fluctuations of fracturelike disruptions of associating polymer solutions
National licenceAmerican Physical Society | 1995| -
Protective action of glycine on CC14-induced liver injury in rats
National licenceElsevier | 1994| -
Particle concentration and particle size measurements in a particle laden turbulent free jet
National licenceSpringer Verlag | 1990| -
A comparative study of Si‐ and GaAs‐based devices for repetitive, high‐energy, pulsed switching applications
National licenceAmerican Institute of Physics | 1992| -
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
National licenceAmerican Institute of Physics | 2011| -
Lock‐on effect in pulsed‐power semiconductor switches
National licenceAmerican Institute of Physics | 1992| -
Emittance estimation by an ion optical element with variable focusing strength and a viewing target
National licenceAmerican Institute of Physics | 2010| -
Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells
National licenceAmerican Institute of Physics | 2011| -
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
National licenceAmerican Institute of Physics | 2011| -
Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics
National licenceAmerican Institute of Physics | 2007| -
Mn12-acetate film pattern generated by photolithography methods
National licenceAmerican Institute of Physics | 2004| -
Treatment of H-Acid Wastewater by Photo-Fenton Reagent Combined with a Biotreatment Process: A Study on Optimum Conditions of Pretreatment by a Photo-Fenton Process
National licenceSpringer Verlag | 2002| -
HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer
National licenceAmerican Institute of Physics | 2008| -
Anisotropic transport properties in InAs/AlSb heterostructures
Free accessAmerican Institute of Physics | 2010| -
A diagnosis of linear eddy-viscosity in turbulence modeling
National licenceAmerican Institute of Physics | 2002| -
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
National licenceAmerican Institute of Physics | 2011| -
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
National licenceAmerican Institute of Physics | 2008| -
Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer
National licenceAmerican Institute of Physics | 2008| -
Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer
National licenceAmerican Institute of Physics | 2008| -
Weak anti-localization of the two-dimensional electron gas in modulation-doped AlxGa1−xN/GaN heterostructures with two subbands occupation
National licenceAmerican Institute of Physics | 2004| -
Theoretical and experimental depth-resolved cathodoluminescence microanalysis of excitonic emission from ZnO epilayers
National licenceAmerican Institute of Physics | 2008| -
A fluorimetric enzyme assay for the diagnosis of Morquio disease type A (MPS IV A)
National licenceElsevier | 1989| -
In situ evidence for the structure of the magnetic null in a 3D reconnection event in the Earth's magnetotail
National licenceNature Publishing Group | 2006| -
Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer
National licenceAmerican Institute of Physics | 2008| -
A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer
National licenceAmerican Institute of Physics | 2008| -
Effects of alloying and localized electronic states on the resonant Raman spectra of Zn1−xMgxO nanocrystals
National licenceAmerican Institute of Physics | 2007| -
Satellite observations of separator-line geometry of three-dimensional magnetic reconnection
National licenceNature Publishing Group | 2007| -
Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition
National licenceAmerican Institute of Physics | 2008| -
High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer
National licenceAmerican Institute of Physics | 2008|
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