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Effect of Isolated Defects and Defect Pairs on the Spectrum of the Edge Luminescence of Solids
British Library Online Contents | 2004| -
Effect of isolated defects and defect pairs on the spectrum of the edge luminescence of solids
Online Contents | 2004| -
Effect of isolated defects and defect pairs on the spectrum of the edge luminescence of solids
Springer Verlag | 2004| -
Features of Determination of Shallow-Level Impurity Concentrations in Semiconductors from Analysis of the Exciton Luminescence Spectrum
British Library Online Contents | 2002| -
Specific Features of Determination of the Concentrations of Shallow-Level Impurities in Semiconductors from Analysis of Edge-Luminescence Spectra
British Library Online Contents | 2003| -
Effect of Neutron Irradiation and Annealing on the Intensity of the Copper-Related 1.01 eV Emission Band in n-type GaAs
British Library Online Contents | 1997| -
Generation of V~G~aTe~A~sV~A~s Complexes in Tellurium-doped n-type GaAs by Low-temperature Annealing
British Library Online Contents | 1997| -
Effect of fast-neutron irradiation on the photoluminescence of n-type GaAs(Te) crystals
British Library Online Contents | 1997| -
Electrical Characterization of Irradiation plus Annealing-induced V~A~sZn~G~n Pairs in p-type GaAs(Zn) Crystals
British Library Online Contents | 1996| -
Influence of Non-Stoichiometry on the Recombination Activity of Dislocations in Undoped Semi-insulating GaAs Crystals
British Library Online Contents | 1995| -
Diffusion of Radiation-Induced Intrinsic Point Defects in p-GaAs
British Library Online Contents | 1996| -
Generation of V~G~aTe~A~sV~A~s Complexes in Low-Temperature Annealing of Tellurium-Doped n-GaAs Crystals
British Library Online Contents | 1998| -
Role of Nonstoichiometry in the Determination of Dislocation Activity in Semiinsulating Undoped GaAs Crystals
British Library Online Contents | 1995|
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