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Impurity bands and band tailing in n‐type GaAs
National licenceAmerican Institute of Physics | 1986| -
Band-gap narrowing in the space-charge region of heavily doped silicon diodes
National licenceElsevier | 1985| -
Impurity bands and band tailing in moderately doped silicon
National licenceAmerican Institute of Physics | 1986| -
The effect of electron‐hole plasmas on the density of states of silicon and GaAs
National licenceAmerican Institute of Physics | 1989| -
Application of multiscattering theory to impurity bands in Si:As
National licenceAmerican Institute of Physics | 1988| -
Model for determining the density and mobility of carriers in thin semiconducting layers with only two contacts
National licenceAmerican Institute of Physics | 1995| -
Majority and minority electron and hole mobilities in heavily doped GaAs
National licenceAmerican Institute of Physics | 1991| -
Models for heavy doping effects in gallium arsenide
National licenceAmerican Institute of Physics | 1987| -
Photoionization cross‐section studies of the platinum‐donor center in silicon
National licenceAmerican Institute of Physics | 1987| -
Calculated majority‐ and minority‐carrier mobilities in heavily doped silicon and comparisons with experiment
National licenceAmerican Institute of Physics | 1992| -
Analysis of nonexponential transient capacitance in silicon diodes heavily doped with platinum
National licenceAmerican Institute of Physics | 1983| -
Effect of donor impurities on the conduction and valence bands of silicon
National licenceAmerican Institute of Physics | 1982| -
Effect of donor impurities on the density of states near the band edge in silicon
National licenceAmerican Institute of Physics | 1981| -
Methods for accurate determination of emission rate and trap concentration with application to platinum‐doped silicon
National licenceAmerican Institute of Physics | 1987| -
Effects of doping‐density gradients on band‐gap narrowing in silicon and GaAs devices
National licenceAmerican Institute of Physics | 1989| -
Effect of ionized donors on the electron and hole densities of states in silicon
National licenceAmerican Institute of Physics | 1983| -
Comparison of models of the built‐in electric field in silicon at high donor densities
National licenceAmerican Institute of Physics | 1984|
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