Year of publication
Subject
Type of material
Licence
Synonyms were used for: Dotierung
Search without synonyms: keywords:(Dotierung)
Used synonyms:
- halbleiterdotierung
-
0.2- mu m gate-length atomic-planar doped pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As MODFETs with fT over 120 GHz
Tema Archive | 1988|Keywords: DOTIERUNG -
0.4% absolute efficiency gain of industrial solar cells by laser doped selective emitter
Tema Archive | 2009|Keywords: Halbleiterdotierung -
0.23 mu m gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE
Tema Archive | 1991|Keywords: DOTIERUNG -
1.00 MeV proton radiation resistance studies of single-junction and single dual-junction amorphous-silicon alloy solar cells
Tema Archive | 1990|Keywords: DOTIERUNG -
1.3-1.55 mu m light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta -doping
Tema Archive | 2004|Keywords: Halbleiterdotierung -
1.3 micrometer surface-emitter (In, Ga) (As, P)/InP LED for transmission rates up to 200 Mbit/s
Tema Archive | 1985|Keywords: DOTIERUNG -
1.5 m to 0.87 m optical upconversion by wafer fusion
Tema Archive | 2004|Keywords: Halbleiterdotierung -
1.8 Gb/s transmission over 210 km using an erbium doped fiber laser amplifier with 20 dB repeater gain in a direct detection system
Tema Archive | 1989|Keywords: DOTIERUNG -
1.31-1.36 mu m optical amplification in Nd3+ -doped fluorozirconate fibre
Tema Archive | 1990|Keywords: DOTIERUNG -
1.48 microm and 0.98 microm high-power laser diodes for erbium-doped fiber amplifiers
Tema Archive | 1991|Keywords: DOTIERUNG -
1.54 microm photoluminescence and electroluminescence of erbium doped GaAs and GaAlAs grown by molecular beam epitaxy
Tema Archive | 1990|Keywords: DOTIERUNG -
1.54 mu m electroluminescence in MeV ion implanted Er-doped GaAs
Tema Archive | 1990|Keywords: DOTIERUNG -
1.54-mum electroluminescence of erbium-doped silicon grown by molecular beam epitaxy
Tema Archive | 1985|Keywords: DOTIERUNG -
1.54 mu nm Er3+-doped fibre amplifier optically pumped at 807 nm
Tema Archive | 1988|Keywords: DOTIERUNG -
1D photonic band gap PbTe doped silica quantum dot optical device
Tema Archive | 2005|Keywords: PbTe-Dotierung, Dotierung -
1/f noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors
Tema Archive | 2009|Keywords: Halbleiterdotierung -
1/f noise in amorphous silicon and hydrogenated amorphous silicon thin films
Tema Archive | 1991|Keywords: DOTIERUNG
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