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Sub-nanosecond semiconductor opening switches based on 4H-SiC p+pon+-diodes
Online Contents | 2003| -
Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode
National licenceTrans Tech Publications | 2013|Contributors: Grekhov, Igor V. -
Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
National licenceTrans Tech Publications | 2008|Contributors: Grekhov, Igor V. -
Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures
Online Contents | 2016|Contributors: Grekhov, Igor V -
Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base
National licenceTrans Tech Publications | 2003|Contributors: Grekhov, Igor V. -
Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices
National licenceTrans Tech Publications | 1995|Contributors: Grekhov, Igor V. -
Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
National licenceTrans Tech Publications | 2013|Contributors: Grekhov, Igor V. -
Robert Arnol'dovich Suris (on his 80th birthday)
Online Contents | 2016|Contributors: Grekhov, Igor' V -
Interfacial Properties of Silicon Structures Fabricated by Vacuum Grooved Surface Bonding Technology
Online Contents | 1998|Contributors: Grekhov, Igor V.
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